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IBD Reactive deposition Dielectric characterization Refractive index 1.68 ~ saphire.

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Presentation on theme: "IBD Reactive deposition Dielectric characterization Refractive index 1.68 ~ saphire."— Presentation transcript:

1

2 IBD Reactive deposition

3 Dielectric characterization Refractive index 1.68 ~ saphire

4 Dielectric breakdown voltage dependence on: - oxide thickness - contact area Composition analysis: metal contamination, stoichiometry (Al:O) Rutherford Backscattering analysis of a IBD deposited Al 2 O 3 film. Total level of metal contamination < 400ppm

5 Film stress, adhesion 5  m AlN film delamination after disk head slider fabrication. 5  m sputtered AlN Dual-Stripe disk head INESC (1998)

6 Vacuum systems

7 Nordiko 3600 IBD system donation from Seagate (Ireland)

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9 Rotary pumps Turbomolecular pumps Cryogenic pumps - 1 st stage pumps - ultimate pressure ~10 -4 Torr - Requires a purge vapor line - 2nd stage pumps - ultimate pressure ~10 -10 Torr - requires a backing pump - 2nd stage pumps - ultimate pressure ~10 -11 Torr Momentum transfer from the disks to the gas molecules. Separation rotor to disks ~ free mean path (molecular regime)

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11 Pressure increase  lower filament temperature  Lower resistance Ultimate pressure detection ~10 -11 Torr Ultimate pressure detection ~10 -7 Torr Ultimate pressure detection ~10 -4 Torr

12 Bibliography -Nanoelectronics and information technology – Advanced Electronic Materials and Novel Devices, Chap.8, Rainer Waser (Ed.), Wiley-VCH (2003) - VLSI Technology, S.M.Sze, McGraw-Hill International Editions - Sputtering: user reference guide – Nordiko internal report - Spin Electronics - Chap.13, M.Ziese and M.J.Thornton (Ed.), Lecture Notes in Physics, Springer- Verlag -Tecnologia de Vácuo, A.M.C.Moutinho, M.E.F.Silva, M.A.Cunha, Univ.Nova de Lisboa (Ed.) - Solid State Technology, p.35-40, January 2003

13 -M.Tan, “Ion beam deposition: meeting the challenge of thinner films”, Data Storage, pp.35-38, January 1996 - C.S.Bhatia, G.Guthmiller and A.M.Spool, “Alumina Films by sputter deposition with Ar/O2: preparation and characterization”, J.Vac.Sci.Technol. A 7 (3), pp.1298-1302, May/Jun 1989 - R.S.Nowicki, “Properties of RF-sputtered Al2O3 films deposited by planar magnetron”, J.Vac.Sci.Technol. Vol. 14 (1), pp.127-133, Jan/Feb 1977 -V.Gehanno, P.P.Freitas, A.Veloso, J.Ferreira, B.Almeida, J.B.Sousa, A.Kling, J.C.Soares and M.F.da Silva, “Ion Beam deposition of Mn-Ir spin valves”, IEEE Trans. Magn., vol.35, pp.4361-4367 (1999) -M.Scherer, W.Lehnert, M.Stakic and N.Kling, “Insulating layers for the MR/GMR read elements”, PROXIMITY- Magnetic Storage Industry Sourcebook, p.24, 1998 -Atomic Layer Deposition special report, Solid State Technology, pp.35, January 2003 -M.Tan, S-In Tan and Y.Shen, “Ion beam deposition of Alumina for recording head applications”, IEEE Trans. Magn., vol.31, pp.2694-2696 (1995)


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