1. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 1 Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, France IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, France University of Frankfurt, Germany Mimosa15 arrays: concept and first test results ARRAY3 ARRAY 1 ARRAY 0 ARRAY 2 3T RTol, S-D swapped (first) UniDepl, 3T, EnclDiode RTol_optimized (first) RTol, LOCOS totally removed(first) UniDepl, Encl.Diode, individual Nwell_ring (second)) RTol, 3T Self Bias (second)) 3T RTol, S-D optimum (second)) UniDepl, 3T, RTol, Common Nwell ring Pitch 20 µm, 3Tpixels Pitch 30 µm, self-bias pixels Size (all arrays): 42x42 pixels

2. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 2 -25 °C10°C 40 °C 0 krad Standard diode Rad-tol diode 55 Fe calibration tests: Temperature: -25°C, 10°C and 40°C Integration time: 200 µs (10MHz) and 800 µs (2.5 MHz) To be compared with Mimosa 11 results

3. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 3 Mimosa15: Array0, Sub1 (C1S1) Optimization of M*2 RadTol type diode ENC = 11.1 ÷ 19.2 el (« Standard » RadTol (3.4x4.3 µm 2 ): ENC = 12 ÷ 16 el ) Diode dimension: 3.6x4.4 µm 2

4. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 4 Mimosa15: Array3, Sub2 (C4S1) LOCOS totally removed ENC = 14.8 ÷ 26 el Diode dimension: 3.6x4.4 µm 2

5. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 5 Mimosa15: Array3, Sub1 (C4S2) 3T self-bias ENC = 14.1 ÷ 22.1 el Diode dimension: 3.6x4.4 µm 2

6. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 6 Conclusions 1 Do we have arguments to adjust the diode design on Mimo*3? Not obvious, check after irradiation! Not STRONG arguments, if any…

7. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 7 Mimosa15: Array1, Sub1 (C2S1) 3T-RadTol, swapped (less optimum for noise) S-D on Reset Transistor ENC = 16.1 ÷ 20.1 el Diode dimension: 4x4 µm 2

8. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 8 Mimosa15: Array1, Sub2 (C2S2) 3T-RadTol, standard (optimum for noise) S-D on Reset Transistor ENC = 11.6 ÷ 15.2 el Diode dimension: 4x4 µm 2

9. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 9 Conclusions 2 Charge losses on standard after irradiation???

10. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 10 Mimosa15: Array0, Sub2 (C1S2) UniDepleted Self-bias, Enclosed Diode, Individual Nwell ring, All- Periphery Pwell Ring ENC = 15.3 ÷ 17.8 el Diode dimension: 8x5.2 µm 2

11. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 11 Mimosa15: Array2, Sub1 (C3S1) 3T Non RadTol, Enclosed Diode, NO Nwell ring ENC = 12.4 ÷ 19.7 el Diode dimension: 5.2x5.2 µm 2

12. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 12 Mimosa15: Array2, Sub2 (C3S2) 3T RadTol, Common Nwell ring, Small Corner Pwell for substrate current injection ENC = 12.3 ÷ 19.5 el Diode dimension: 4x4 µm 2

13. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 13 Conclusions 3 A0S2: No significant changes in spectrum for I+=I-=3µA (like in Mimosa11). But where I+ current goes? Very low contact resistivity! A2S1 and A2S2: Impossible to inject the current! Diode instead of ohmic contact??? Too small dimension of Pwell or smoothing during mask generation?

14. Wojciech Dulinski Wojciech.Dulinski@ires.in2p3.fr Réunion Capteurs CMOS, 27.02.2006 14 Which structure for EM imaging? No clear answer, unfortunately… Shall we try the new idea?