Download presentation
Presentation is loading. Please wait.
1
IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting
2
S1 S2 L S3 Rd50-2551 Sensors
3
Properties Provided by Micron semiconductor Limited FZ (float Zone) technology >8 cm N on P V dep = 40V V dep(expected) = = 43.3V Thickness = d = 312 m
4
Bulk Current and GR Current for all 2551-6 sensors.
7
CV Measurements
8
V dep = -50V, micron provided value = -40V
9
V dep = -53V, micron provided value = -40V
10
V dep = -48V, micron provided value = -40V
11
rd50-2551-4
12
Properties Provided by Micron semiconductor Limited FZ (float Zone) technology >8 cm N on P V dep = 40V V dep(expected) = = 43.6V Thickness = d = 313 m
13
Bulk Current and GR Current for all 2551-4 sensors.
16
CV Measurements
17
V dep = -72V, micron provided value = -40V
18
V dep = -74V, micron provided value = -40V
19
V dep = -75V, micron provided value = -40V
20
rd50-2552-7
21
S1 S2 L S3
23
Bulk Current and GR Current for all 2552-7 sensors.
26
CV Measurements
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.