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In-situ AFM Tensile Testing
ME 395 Professor Horacio D. Espinosa Chris Biedrzycki, Matthieu Chardon, Travis Harper, Richard Neal
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Micron Scale Mechanical Properties
Once structures enter microscale, laws of macro mechanics no longer dominate mechanical response Samples approach size scale of grains and dislocations, also dominated by surface effects Multimaterial interfaces, sharp corners in MEMS devices require in-situ characterization Devices in market require a high amount of reliability, necessitating direct fatigue testing methods
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Advantages of In-Situ Testing
Model entire range of behavior Differentiate elastic and plastic regimes Understand more than ultimate tensile strength (UTS)
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Similar Works 1 3 1 =2 μm No testing results 2 1) Mechanical Measurements at the Micron and Nanometer Scales, Knauss, Huang 2) Microtensile Tests with the Aid of Probe Microscopy for the Study of MEMS Materials, Knauss, Chasiotis 3) MEMS Fatigue Testing to Study Nanoscale Response, Fisher, Labiossiere
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Testing stage Polysilicon specimen
Integrated during fabrication Pulled by mass Actuators move mass when voltage applied Force measured by capacitive sensor Strain measured by DIC From Zhu et. al., 2003
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ANSYS Modeling of System
The maximum load deliverable by the loading device is ~100 mN From Zhu et. al., 2003
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Polysilicon Sample Properties 4μm 10μm Young's Fracture Method Modulus
Strength (Gpa) (GPa) MUMPs21 tensile MUMPs19 132 - Stress Concentrations Size Effect Size Effect-doped Microcantilever 174±20 2.8±0.5 bending AFM deflection 173±10 2.6±0.4 Bulk indentation Doped-Undoped 95-175 4μm 10μm From Prorok, et al. Vol 5, 2004.
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Integrated in Chip Yong’s Chip Chris’s Quarter
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Testing Setup Difficult to land the cantilever on the test specimen without repeatedly breaking tips
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Atomic Force Microscopy (AFM)
Benefits Very fine resolution (~0.02nm) Variable scanning size/rate Risks Noise sensitivity, drift Constraints on sample size/mass From Espinosa, “Introduction to AFM and DPN”, ME395 Winter 2004
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AFM Resolution Resolution
Dimension 3100: 512x512 pix JEOL: 256x256 pix Digital Image Correlation (DIC) can interpret change in position of a pixel by change in grayscale pixel strength (from 1=black to 255=white). Ideally, DIC can understand a resolution of 1/255th of a pixel
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AFM Resolution Scan size (say, 1.0 μm) corresponding to 512 pixels
DIC resolution: 1/255th of a pixel Theoretical (maximum) displacement resolution (a) If length of sample is 10m, theoretical resolution of strain is (b) (a) (b)
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Polysilicon pad imaged using D3100 AFM
AFM Imaging Types Amplitude Topography Polysilicon pad imaged using D3100 AFM
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Polysilicon pad imaged using JEOL AFM
AFM Imaging Types Amplitude Topography Polysilicon pad imaged using JEOL AFM
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AFM Problems Adjustment of voltage, frequency for tip
Sensitivity to dust/scratches Breakage of tip Crash of tip into sample Sensitivity of feedback control system
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Digital Image Correlation
No automatic compensation for drift Correlation on stationary samples Drift strain is only strain Used to generate correction factor
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Digital Image Correlation (DIC)
Example Illustrates DIC Capabilities Sample Prior to Deformation Error X-X Tensile Strain Y-Y Tensile Strain Shear Strain
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DIC Problems Out-of-plane Deformation Displacement Gradients
Scanning Noise
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DIC Resolution Displacement resolution of DIC is 1/255pix, much smaller than the pix minimum displacement in pixels for the polysilicon at failure. AFM/DIC should be able to display 0.512/(1/255), or 130 images for the range of displacement to failure based on ideal resolution/largest scan area. *Note: actual resolution smaller than ideal, fewer images result. Smaller scan areas will provide more images, and thus finer understanding of the change in strain over time.
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Digital Image Correlation (DIC)
Sample DIC images from 10x10μm sample using D3100 AFM
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Digital Image Correlation (DIC)
Sample DIC images from 10x10μm sample using JEOL 5200 AFM
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The EPIC AFM, scanned in amplitude mode, yields the best results
AFM Comparison The EPIC AFM, scanned in amplitude mode, yields the best results
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Experimental Design Optimal Designs Computer generated
Best with respect to a particular criterion D-Optimal minimizes l(X’X)-1l Places points at regions of greatest standard error
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Experimental Design Robust Design
All relevant information obtained using less than half the required experiments in a full factorial study H0: μ1 = μ2 H1: μ1 ≠ μ2 α = P(type I error) = P(reject H0 l H0 true) β = P(type II error) = P(fail to reject H0 l H0 is false) Power = 1 - β
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Experimental Design Standard Order #19 Removed (Above 3.5)
Outliers distort the analysis of variance Outlier when residuals +/- 3σ
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Significant Factors: A, B, AB
Experimental Results Significant Factors: A, B, AB R-Squared: .776
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Experimental Results
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In Conclusion… Optimal testing conditions for drift reduction:
JEOL 5200 AFM (Forced Feedback) Amplitude Scan Tapping Mode High Scan Area Sample choice and scan rate effect drift rate very little
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In Conclusion… Optimized drift condition remains too large to distinguish polysilicon strains from error 1% Strain at failure for polysilicon – minimized drift remains 100% of experimental strain With current minimized strain values, brittle samples cannot be assessed
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Future Work Drift Effects Reduction Opportunities
Appraiser Variation in DIC Analysis Environmental Effects Electromechanical Noise Temperature, Pressure, Humidity Variation Feedback Mechanism - Consider Image Repeatability Sample Ductility
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Thank You For Your Time Questions? In-Situ AFM Tensile Testing Group
Chris Biedrzycki, Matthieu Chardon, Travis Harper, Richard Neal
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