1. 半導體量測技術 Semiconductor Materials and Device Characterization Topic 8: physical characterization of semiconductor Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

2. Topics: Ch. 10 in D. K. Schroder Physical characterization: Rutherford Backscattering Spectroscopy (RBS) p. 689~692 in D. K. Schroder Application examples

3. D. K. Schroder, p. 690

4. (a)1/10 6 of incident atoms: elastic collision and backscattered at various angles (b)Leaving sample surface with reduced energy Fig. from D. K. Schroder, p. 690

5. Question: suppose M 2 is very heavy, is E 1 smaller or larger? D. K. Schroder, p. 690~691

6. From (10.21) and (10.22):

7. *The yield is not to scale on this figure. Order and Peak height D. K. Schroder, p. 692

8. D. K. Schroder, p.691

9. D. K. Schroder, p. 695

10. Example: Draw yield vs. E for A, B and Si atoms: Mass: A > Si > B Si: substrate A and B: narrow bands of impurities

11. Topic summary of this class Topic 1: resistivity and Four point Probe Topic 2: measurement of doping profile Topic 3: parameter measurements of SPICE model Topic 4: resistance and effective channel length in MOSFET Topic 5: oxide trapped charge and poly-depletion effect in MOSFET Topic 6: charge pumping technique and HS experiment Topic 7: time-of-flight technique and carrier mobility Topic 8: physical characterization of semiconductor