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Etching Film deposition Photoresist coating Lithography Development Film etching Together with calibration sample Optical inspection Measure photoresist.

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Presentation on theme: "Etching Film deposition Photoresist coating Lithography Development Film etching Together with calibration sample Optical inspection Measure photoresist."— Presentation transcript:

1 Etching Film deposition Photoresist coating Lithography Development Film etching Together with calibration sample Optical inspection Measure photoresist thickness Material characterization (magnetic, transport properties,... Resist strip Optical inspection Técnicas de Micro e Nanofabricação (2º semestre 2005/06) __________________ 1º Trabalho __________________ data: __________ __________________

2 Film deposition Photoresist coating Lithography Developing Film etching Resist strip Run Sheet #1-etching ConditionsProcess stepComments Deposition method: Machine: Deposition conditions: Substrate preparation substrate: Clean in Alconox solution + DI water Calibration sample: Mask : _________________ Map : ______________ Origin: X= ________, Y= _______ Energy : _______% ( Power : ______) Focus : ______Room Humidity: __________ vapor prime 5 minutes coat with 1.5  m PR (recipe 6/2) recipe 5/2 development time : ______ Etching method: Machine: Etching conditions: Microstrip________ @80ºC + ultrasonic Conditions for cleaning: Rinse with IPA + DI water + dry N 2 Total time in hot  -strip Date: ______ Thickness to etch: Estimated etch time: Total time:

3 Lift-off Photoresist coating Lithography Development Film deposition Optical inspection Measure photoresist thickness Resist strip Material characterization (resistivity, index of refraction...) Measure film thickness Together with calibration sample

4 Film deposition Photoresist coating Lithography Developing Resist strip Run Sheet #1-liftoff ConditionsProcess stepComments Deposition method: Machine: Deposition conditions: Substrate preparation substrate: Clean in Alconox solution + DI water Calibration sample: Mask : _________________ Map : ______________ Origin: X= ________, Y= _______ alignment: YES / NO Energy : _______% ( Power : ______) Focus : ______Room Humidity: __________ vapor prime 5 minutes coat with 1.5  m PR (recipe 6/2) recipe 5/2 development time : ______ Microstrip________ @80ºC + ultrasonic Conditions for cleaning: Rinse with IPA + DI water + dry N 2 Total time in hot  -strip Date: ______


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