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A Self-adjusting Scheme to Determine Optimum RBB by Monitoring Leakage Currents Nikhil Jayakumar* Sandeep Dhar $ Sunil P. Khatri* $ National Semiconductor,

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Presentation on theme: "A Self-adjusting Scheme to Determine Optimum RBB by Monitoring Leakage Currents Nikhil Jayakumar* Sandeep Dhar $ Sunil P. Khatri* $ National Semiconductor,"— Presentation transcript:

1 A Self-adjusting Scheme to Determine Optimum RBB by Monitoring Leakage Currents Nikhil Jayakumar* Sandeep Dhar $ Sunil P. Khatri* $ National Semiconductor, Longmont,CO. *Texas A&M University, College Station, TX.

2 Introduction Leakage power is expected to exceed dynamic power consumption in the near future. Leakage power is expected to exceed dynamic power consumption in the near future. Existing techniques to reduce leakage Existing techniques to reduce leakage Static Static High VT power gating switches (MTCMOS, HL). High VT power gating switches (MTCMOS, HL). Dual VT assignment (DUET). Dual VT assignment (DUET). Dynamic Dynamic DTMOS, SCCMOS. DTMOS, SCCMOS. Reverse Body Biasing (RBB). Reverse Body Biasing (RBB). RBB reduces leakage (body effect) but if RBB is too high, leakage can actually increase due to other leakage components. RBB reduces leakage (body effect) but if RBB is too high, leakage can actually increase due to other leakage components.

3 Leakage Components Sub-threshold leakage Sub-threshold leakage Drain -> Source Drain -> Source Gate leakage Gate leakage Drain -> Gate / Source -> Gate Drain -> Gate / Source -> Gate Drain -> bulk leakage Drain -> bulk leakage Bulk Band to Band Tunneling (BTBT) Bulk Band to Band Tunneling (BTBT) Surface BTBT (Gate Induced Drain Leakage - GIDL) Surface BTBT (Gate Induced Drain Leakage - GIDL) Reverse biased PN junction current Reverse biased PN junction current

4 Effect of RBB on Leakage Sub-threshold decreases exponentially with Vt, which increases with RBB. Sub-threshold decreases exponentially with Vt, which increases with RBB. Gate leakage (drain-gate) does not change appreciably with RBB. Gate leakage (drain-gate) does not change appreciably with RBB. At RBB BTBT dominates GIDL. At RBB BTBT dominates GIDL. Mainly, sub-threshold leakage & BTBT change with RBB. Mainly, sub-threshold leakage & BTBT change with RBB. Sub-threshold leakage decreases with RBB, while BTBT increases with RBB. Sub-threshold leakage decreases with RBB, while BTBT increases with RBB. Hence there exists an optimum RBB point for minimum leakage. Hence there exists an optimum RBB point for minimum leakage.

5 Variation in Leakage Components with RBB Plot of leakage current components with RBB as measured on a large NMOS device on a test-chip at 25 o C

6 Optimal RBB Determination – Previous work In “Optimal Body Bias Selection for Leakage Improvement and Process Compensation over Different Technology Generations” – C. Neau and K. Roy (ISLPED03), a circuit is presented to help find the optimal RBB. In “Optimal Body Bias Selection for Leakage Improvement and Process Compensation over Different Technology Generations” – C. Neau and K. Roy (ISLPED03), a circuit is presented to help find the optimal RBB. Based on the assumption that sub-threshold leakage is negligible compared to BTBT for stacked devices. Based on the assumption that sub-threshold leakage is negligible compared to BTBT for stacked devices. Claims that optimal RBB is at point at which leakage through 2 stacked devices is equal to half the leakage through a single leaking device. Claims that optimal RBB is at point at which leakage through 2 stacked devices is equal to half the leakage through a single leaking device. This assumption underestimates the sub-threshold leakage component. This assumption underestimates the sub-threshold leakage component.

7 Optimum RBB Point A marks the optimum RBB point as would be suggested by the previous scheme. Point A marks the optimum RBB point as would be suggested by the previous scheme. Point B marks the actual optimum RBB. Point B marks the actual optimum RBB. This work proposes a circuit which dynamically finds point B. This work proposes a circuit which dynamically finds point B. Leakage current measured for a large NMOS device and 2 large NMOS devices in series on a 0.13μ test-chip at 25 o C

8 Leakage Monitoring and Self-adjusting Scheme The Leakage Monitoring Scheme consists of 3 components The Leakage Monitoring Scheme consists of 3 components A Leakage Current Monitor (LCM). A Leakage Current Monitor (LCM). This leakage monitor is designed to work over a wide range of leakage currents. This leakage monitor is designed to work over a wide range of leakage currents. A Digital Block to interface with the LCM and control the body-bias voltage. A Digital Block to interface with the LCM and control the body-bias voltage. A programmable body bias voltage generator controlled by the Digital Block. A programmable body bias voltage generator controlled by the Digital Block. We discuss the first 2 blocks. We discuss the first 2 blocks.

9 Leakage Monitoring and Self-adjusting Scheme The Leakage-Monitoring scheme is based on measuring the time taken for a leaking device to discharge (or charge) a capacitive load. The Leakage-Monitoring scheme is based on measuring the time taken for a leaking device to discharge (or charge) a capacitive load. At the heart of this is the LCM. At the heart of this is the LCM.

10 The Leakage Current Monitor (LCM) Shown here: LCM for NMOS leakage. Shown here: LCM for NMOS leakage. Node Nchk is initially precharged. Node Nchk is initially precharged. Leakage through a representative device M L is measured by sampling node Nchk at regular intervals and seeing when (number of sampling periods after which) the node Nchk is discharged. Leakage through a representative device M L is measured by sampling node Nchk at regular intervals and seeing when (number of sampling periods after which) the node Nchk is discharged. A capacitor bank and a small gate bias are provided to increase or decrease rate of discharge of the node. A capacitor bank and a small gate bias are provided to increase or decrease rate of discharge of the node. Allows the LCM to work over a wide range. Allows the LCM to work over a wide range.

11 Operation of the Scheme We start at a point on the curve where leakage will decrease with RBB We then move along the curve till … we hit the point at which leakage starts increasing The Digital Block measures the time taken for the leaking device in the LCM to discharge (charge) the monitored node in the LCM. The Digital Block measures the time taken for the leaking device in the LCM to discharge (charge) the monitored node in the LCM.

12 Salient features of our Scheme Low power Low power Only about 11.4μA at 1.2V and 125 o C for 0.13 μm TSMC process Only about 11.4μA at 1.2V and 125 o C for 0.13 μm TSMC process Leakage current measurement based on time taken to discharge a node. Leakage current measurement based on time taken to discharge a node. Uses same leakage monitoring cell to handle large variations of leakage currents Uses same leakage monitoring cell to handle large variations of leakage currents Capacitor bank and switch-able gate bias used to adjust range. Capacitor bank and switch-able gate bias used to adjust range.

13 Area required Layout (standard cell based) done for the leakage monitors for PMOS and NMOS. Layout (standard cell based) done for the leakage monitors for PMOS and NMOS. Height of standard cell = 3.285μ. Height of standard cell = 3.285μ. Width of cell for Width of cell for Pulse generator = 38.22μ (126 μ 2 ) Pulse generator = 38.22μ (126 μ 2 ) LCM nmos = 77.87μ (256 μ 2 ) LCM nmos = 77.87μ (256 μ 2 ) LCM pmos = 86.41μ (284 μ 2 ) LCM pmos = 86.41μ (284 μ 2 ) Total area approx = 665 μ 2 Total area approx = 665 μ 2

14 Conclusion Reverse body biasing is a useful technique to reduce leakage. Reverse body biasing is a useful technique to reduce leakage. However, if the RBB is too high, the leakage current may inadvertently increase. However, if the RBB is too high, the leakage current may inadvertently increase. The optimum RBB point can vary with process and temperature variations. The optimum RBB point can vary with process and temperature variations. Hence a scheme such as ours that can dynamically find the optimum RBB point can help greatly. Hence a scheme such as ours that can dynamically find the optimum RBB point can help greatly. Also the scheme itself does not consume very high power and it has a very modest silicon area requirement. Also the scheme itself does not consume very high power and it has a very modest silicon area requirement.

15 Questions ?

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