Presentation is loading. Please wait.

Presentation is loading. Please wait.

Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating.

Published by Modified over 9 years ago

Similar presentations

Presentation on theme: "Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating."— Presentation transcript:

1 Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating voltage –2 nm minimum spot size –12 MHz scanning rate –150 x 190 mm write area –0.62 nm stage movement precision –< 25 nm stitching & overlay accuracy MCPFe_LiNE & ionLiNE e_LiNE is a ultra high resolution electron beam lithography system and nano-engineering workstation. Key applications: Lithography on 4 inch samples; Electron beam induced deposition and etching; In-situ electrical measurements and nano-manipulation, e.g. CNT or nanorods. ionLiNE is dedicated to ion beam nanolithography, fabrication, and engineering. Key applications: Low dose ion events; Thin film engineering; Surface fictionalization; Localized defect injection.

2 1.Light sources: Ar + laser, He-Cd laser, Xe-lamp, Ti-sapphire fs laser. 2.Photoluminescence (PL), excitation PL, photoconductivity facilities. 3.Modulated photo-reflectance facilities. 4.Hamamatsu Streak Camera C5680 for time-resolved PL. 5.OI Spectro-Mag 4000 system: magnetic field up to 7T; sample temperature range from 5K to 300K. 6.OI Spectro-Mag 2000 system: magnetic field up to 14T; sample temperature range from 0.3K to 80K. 7.Closed cycle (10 - 300K) system for variable temperature transport and optical measurements. 8.LHe cryostat (2 – 300K) for variable temperature magneto-transport measurements. 9.LN 2 cryostat (77 – 450K) for variable temperature magneto-transport and optical measurements. 10.Various electronic equipments for transport measurements Laboratory Equipment List

3 Quantum wire resonant tunneling diode fabrication by photolithography

4 Structure fabricated by e-beam lithography

5 Low temperature and high magnetic field transport measurements

6 Low temperature magneto-photoluminescence measurements

7 Variable temperature magneto-transport measurements

8 Transport measurement facilities Oxford Spectro-Mag 2000 system (B: 0  14T; T: 0.3K  80K)

9 LHe cryostat (2 – 300K, 0 – 800mT))

10 Oxford Spectro-Mag 4000 system (B: 0  7T; T: 5K  300K) Magneto-optical measurement facilities

11 Spex 1403 monochromator

12 Closed cycle (10 - 300K) system

13 Hamamatsu Streak Camera

14 2D image including spectra and temporal information Time Wavelength

15 Electronic equipments for transport measurements

Download ppt "Device Fabrication Facilities NFFJeol JBX6300FS Direct write on wafers, high throughput, mask writing, for nanoelectronics –25, 50, 100 kV accelerating."

Similar presentations

(and briefly, Electrodeposition)

(and briefly, Electrodeposition)
26 June 2001VELO-Overview VELO Overview T. Bowcock University of Liverpool.

26 June 2001VELO-Overview VELO Overview T. Bowcock University of Liverpool.
Modulation of conductive property in VO 2 nano-wires through an air gap-mediated electric field Tsubasa Sasaki (Tanaka-lab) 2013/10/30.

Modulation of conductive property in VO 2 nano-wires through an air gap-mediated electric field Tsubasa Sasaki (Tanaka-lab) 2013/10/30.
Lecture 11. Microscopy. Optical or light microscopy involves passing visible light transmitted through or reflected from the sample through a single or.

Lecture 11. Microscopy. Optical or light microscopy involves passing visible light transmitted through or reflected from the sample through a single or.
ECE/ChE 4752: Microelectronics Processing Laboratory

ECE/ChE 4752: Microelectronics Processing Laboratory
INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.

INTEGRATED CIRCUITS Dr. Esam Yosry Lec. #6.
Vicki Bourget & Vinson Gee April 23, 2014

Vicki Bourget & Vinson Gee April 23, 2014
Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.

Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.
Nanoscale molecular- switch crossbar circuits Group 2 J. R. Edwards Pierre Emelie Mike Logue Zhuang Wu.

Nanoscale molecular- switch crossbar circuits Group 2 J. R. Edwards Pierre Emelie Mike Logue Zhuang Wu.
Research Opportunities in Radiation-Induced Chemical Dynamics Scientific Opportunities for Studying Laser Excited Dynamics at the LCLS: David Bartels Notre.

Research Opportunities in Radiation-Induced Chemical Dynamics Scientific Opportunities for Studying Laser Excited Dynamics at the LCLS: David Bartels Notre.
Design and Implementation of VLSI Systems (EN1600) lecture04 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Sedra/Prentice.

Design and Implementation of VLSI Systems (EN1600) lecture04 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Sedra/Prentice.
Submicron structures 26 th January 2004 msc Condensed Matter Physics Photolithography to ~1 μm Used for... Spin injection Flux line dynamics Josephson.

Submicron structures 26 th January 2004 msc Condensed Matter Physics Photolithography to ~1 μm Used for... Spin injection Flux line dynamics Josephson.
TOP-DOWN TECHNIQUES (LITHOGRAPHY) FOR MAKING QUANTUM WIRES Lingyun Miao, Limin Ji ECE Dept. University of Rochester.

TOP-DOWN TECHNIQUES (LITHOGRAPHY) FOR MAKING QUANTUM WIRES Lingyun Miao, Limin Ji ECE Dept. University of Rochester.
Antireflex coatings Antireflex coating INESC: 150, 400Å TiWN 2 Resist was exposed both to the light source and to reflected beams from resist/sample.

Antireflex coatings Antireflex coating INESC: 150, 400Å TiWN 2 Resist was exposed both to the light source and to reflected beams from resist/sample.
FYSZ460 Electron Beam Lithography 4.4.2010 Electron Beam Lithography FYSZ460 Advanced Laboratory Exercise Mikko Palosaari

FYSZ460 Electron Beam Lithography Electron Beam Lithography FYSZ460 Advanced Laboratory Exercise Mikko Palosaari
Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Sedra/Prentice Hall, Saint/McGrawHill,

Design and Implementation of VLSI Systems (EN0160) Sherief Reda Division of Engineering, Brown University Spring 2007 [sources: Sedra/Prentice Hall, Saint/McGrawHill,
NIST Nanofabrication Facility. CNST Nanofab A state-of-the-art shared-use facility for the fabrication and measurement of nanostructures –19,000 sq ft.

NIST Nanofabrication Facility. CNST Nanofab A state-of-the-art shared-use facility for the fabrication and measurement of nanostructures –19,000 sq ft.
1 ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 18: Introduction to MEMS Dr. Li Shi Department of Mechanical Engineering.

1 ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid Science and Technology Lecture 18: Introduction to MEMS Dr. Li Shi Department of Mechanical Engineering.
NANOSCALE LITHOGRAPHY MICHAEL JOHNSTON 4/13/2015.

NANOSCALE LITHOGRAPHY MICHAEL JOHNSTON 4/13/2015.
Lithographic Processes

Lithographic Processes

Similar presentations

Ads by Google