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Semiconducting Nanowires as Nanoelectronic Building Blocks Evan Brown Professor Grace Lu Group September 2nd, 2005
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The Goal To make Zn nanowires using electrodeposition. To convert those wires into ZnO wires via thermal oxidization. To characterize the wires.
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The Goal Part 2 Nanowires vertically aligned in a highly ordered template. Future small scale transistors. Can be used as the building blocks for simple logic gates and memory elements.
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The Process
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Anodization
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The Process
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Electrodeposition Originally, DC biasing was used to deposit. This gave varying results.
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Electrodeposition Part 2 With different parameters came different results, but still not ideal.
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Electrodeposition Part 3
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Electrodeposition Part 4 We then tried Pulsed Electrodeposition (PED) to improve the filling factor and uniformity of growth. An initial filling factor of ~75% was achieved.
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Electrodeposition Part 5 Again, vs.
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PED/DC Diffusion is the key. DC electrodeposition does not allow the electrolyte to diffuse evenly throughout all the pores. PED can be tailored to allow for the electrolyte's natural diffusion.
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The Results Preliminary electrical transport measurements have been taken.
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The Results Part 2 I-V Curve of a purely Zn nanowire.
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The Results Part 3 Red-Ti Blue-Zn
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The Results Part 4 Red-Ti Blue-Zn Green-ZnO
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Acknowledgements Professor Jia “ Grace ” Lu, Joseph Fan, Dawei Wang, Marco Huang, CJ Chien. Said Shokair and the IM-SURE program. National Science Foundation
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