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1 Dynamic Power Estimation With Process Variation Modeled as Min–Max Delay Jins Davis Alexander Vishwani D. Agrawal Department of Electrical and Computer.

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Presentation on theme: "1 Dynamic Power Estimation With Process Variation Modeled as Min–Max Delay Jins Davis Alexander Vishwani D. Agrawal Department of Electrical and Computer."— Presentation transcript:

1 1 Dynamic Power Estimation With Process Variation Modeled as Min–Max Delay Jins Davis Alexander Vishwani D. Agrawal Department of Electrical and Computer Engineering Auburn University, AL 36849 USA

2 2 Motivation  Dynamic power increases with glitch transitions, which in turn are a functions of gate delays.  Process variation can influence delays in a circuit, especially in nanoscale technologies.  Thus we need to access this variability for effective estimation of power.

3 3 Motivation…  Many existing techniques depend on Monte Carlo approaches which are time consuming and CPU intensive.  Bounded delay models are usually considered to address process variations in logic level simulation and timing analysis.  We propose a dynamic power analysis method that uses min–max delay model for variations, eliminating the need for Monte Carlo simulation.

4 4 Outline  Ambiguity Intervals.  Maximum Transition Estimation.  Minimum Transition Estimation.  Simulation Methodology.  Experimental Results and Observations.  Conclusion.

5 5 Circuit c880 Simulation Monte Carlo SimulationMin-Max Simulation Min Pwr (mW) Max Pwr (mW) Exec. Time (secs) Min Pwr (mW) Max Pwr (mW) Exec. Time (secs) 2.783.38339.82.753.590.23

6 6 Ambiguity Interval of Signals.  EA is the earliest arrival time  LS is the latest stabilization time  IV is the initial signal value  FV is the final signal value IV FV LSEA IVFV EALS EAdvLSdv EAsv=-∞LSsv=∞ EAsvLSsv EAdv=-∞LSdv=∞

7 7 Propagating Ambiguity Intervals through Gates. (mindel, maxdel) The ambiguity interval (EA,LS) for a gate output is determined from the ambiguity intervals of input signals, their pre-transition and post-transition steady-state values, and the min-max gate delays.

8 8 Theorem 1.  For a gate output: EA = max {E1, E2} + mindel LS = min {L1, L2} + maxdel Where following are for all inputs i  E1 = max{EAdv(i)}  E2 = min{EAsv(i)}  L1 = min{LSsv(i)}  L2 = max{LSdv(i)}

9 9 Finding Number of Transitions. 2 1,3 3 14 5 8 10 12 (mindel, maxdel) 7 10 12 14 5 17 EA LS 3 14 EA LS [0,4] [0,2] 6 17 EA LS [mintran,maxtran]

10 10 Estimating Maximum Transitions  First upper bound: We calculate the maximum transitions (Nd) that can be accommodated in the ambiguity interval given by the gate delay bounds and the (IV,FV) output values.  Second upper bound: We take the sum of the input transitions (N) as the output cannot exceed this. We modify this by : N = N – k.....(1) where k = 0, 1, or 2 for a 2-input gate and is determined by the ambiguity regions and (IV, FV) values of inputs.  Theorem 2: The maximum number of transitions is minimum of the two upper bounds: maxtran = min (Nd, N).....(2)

11 11 Example 1: Upper Bounds. Nd = ∞ N = 8 maxtran=min (Nd, N) = 8 Nd = 6 N = 8 maxtran=min (Nd, N) = 6

12 12 EAsv = EAdv LSdv = LSsv EAsv = LSdv = EAdvLSsv EALS [n1 = 6] [n2 = 4] [n1 + n2 – k = 8 ], where k = 2 [ 6 ] [ 4 ] [ 6 + 4 – 2 = 8 ] Example 2: k in Second Upper Bound.

13 13 Estimating Minimum Transitions  First lower bound (Ns): Based on steady state values, i.e., 0  0, 1  1 as no transitions and 0  1, 1  0 as a single transition.  Second lower bound (Ndet): The minimum number of transitions that can occur in the output ambiguity region is the number of deterministic signal changes that occur within the ambiguity region and such that signal changes are spaced at time intervals greater than or equal to the inertial delay of the gate.  Theorem 3: The minimum number of transitions is the maximum of the two lower bounds: mintran= max (Ns, Ndet)...(3)

14 14 Example 3: Lower Bound.  There will always be a hazard in the output as long as (EAsv – LSdv) ≥ d Thus in this case the mintran is not 0 as per the steady state condition, but is 2. d EAsv = EAdv LSsv = LSdv EAdv = LSdv = EAsvLSsv EALS

15 15 Simulation Methodology  maxdel, mindel = nominal delay ± Δ%  Three linear-time passes for each input vector:  First pass: zero delay simulation to determine initial and final values, IV and FV, for all signals.  Second pass: determines earliest arrival (EA) and latest stabilization (LS) according to Theorem 1.  Third pass: determines upper and lower bound, maxtran and mintran, for all gates according to Theorems 2 and 3.

16 16 Experimental Results: Maximum Power.  Monte Carlo Simulation v/s Min-Max analysis for circuit C880. 100 sample circuits with + 20 % variation were simulated for each vector pair (100 random vectors). Each point is maximum power for one vector-pair over 100 sample circuits. R 2 is coefficient of determination, equals 1.0 for ideal fit. Ideal, for infinite samples Regression line

17 17 Results: Minimum Power. R 2 is coefficient of determination, equals 1.0 for ideal fit.  Monte Carlo Simulation v/s Min-Max analysis for circuit C880. 100 sample circuits with + 20 % variation were simulated for each vector pair (100 random vectors). Each point is minimum power for one vector-pair over 100 sample circuits. Ideal, for infinite samples Regression line

18 18 Observing Effect of Inertial Delay. maxtran =1 0  Transition Statistics for high activity gate 1407 in c2670 for a random vector pair. Histograms obtained from Monte Carlo Simulations of 100 sample circuits. mintran = 0 maxtran = 8

19 19 Further Increasing Inertial Delay. mintran = 0 maxtran = 6 mintran = 0 maxtran = 4

20 20 Table of Results… Circuits implemented using TSMC025 2.5V CMOS library, with standard size gate delay of 10 ps. Min-Max values obtained by assuming ± 20 % variation.

21 21 Execution Time Comparison.

22 22 Conclusion.  We have used min–max delay model to successfully develop a power estimation method with consideration of process variations.  Linear time complexity in number of gates and an efficient alternative to the Monte Carlo analysis.  Future work includes considering process dependent variation in leakage as well as in node capacitances.

23 23 Thank You.


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