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Hello from Mike Deal at Stanford University - Senior Research Scientist at the Stanford Nanofabrication Facility V5.15
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Nanotechnology “Nano” – From the Greek word for “dwarf” and means 10-9, or one-billionth. Here it refers to one-billionth of a meter, or 1 nanometer (nm). 1 nanometer is about 3 atoms long. “Nanotechnology” – Building and using materials, devices and machines at the nanometer (atomic/molecular) scale.
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Nanostructures Carbon nanotube
Gold/Silver nanoparticle (U. Notre Dame) Intel’s transistors used in their integrated circuits (computer chips)
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How do you build something so small?
“Top-down” – building something by starting with a larger piece and carving away material (like a sculpture). “Bottom-up” – building something by putting together smaller pieces (like building a car engine). Chemistry is important in both top-down and bottom-up processes
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Bottom-up fabrication
Adding atoms to atoms, molecules to molecules “Self-assembly” of atoms and molecules Use of chemical and biological processes Current day examples: Self-assemble of organic monolayers for molecular transistors, etc. (Yale) Carbon Nanotubes Vertical growth of nanowires for electronic devices (Stanford) More extreme example: Self-replicating robots.
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Top-down fabrication Method used by integrated circuit industry to fabricate computer chips down to ~ 15 nm size Makes use of depositing thin films, then “photolithography” and plasma etching to make films into desired patterns on a silicon wafer.
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“Top-Down” nanofabrication
Silicon wafer
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Deposition equipment Silicon wafer
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Deposition equipment Gas phase reactants Silicon wafer
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Deposition equipment Gas phase reactants SiN film Silicon wafer
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SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
SiN film Silicon wafer
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Photolithography equipment Photo-sensitive layer (“photoresist”)
Light source “mask” Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photolithography equipment Photo-sensitive layer (“photoresist”)
Light source Ultraviolet light “mask” Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photolithography equipment Photo-sensitive layer (“photoresist”)
Light source Ultraviolet light “mask” Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
Chemical developer Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
Chemical developer Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
SiN film Silicon wafer
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Plasma gas (etches film) Photo-sensitive layer (“photoresist”)
Etching equipment Plasma gas (etches film) Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Plasma gas (etches film) Photo-sensitive layer (“photoresist”)
Etching equipment Plasma gas (etches film) Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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SiN thin film patterned correctly!
SiN film Silicon wafer SiN thin film patterned correctly!
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Starting at photoresist step: Photo-sensitive layer (“photoresist”)
With contamination present Starting at photoresist step: Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
With contamination present Dust particle Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
With contamination present Light source Ultraviolet light “mask” Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
With contamination present Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
With contamination present Another dust particle Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Plasma gas (etches film) Photo-sensitive layer (“photoresist”)
With contamination present Plasma gas (etches film) Photo-sensitive layer (“photoresist”) SiN film Silicon wafer
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Photo-sensitive layer (“photoresist”)
With contamination present Photo-sensitive layer (“photoresist”) SiN film Silicon wafer SiN thin film patterned incorrectly!
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Relative size of clean room contaminants
How do you build something so small? Requires very clean environment: “clean room” Magnified image of contaminant on wafer surface, which can cause defects and failures in nanostructures Relative size of clean room contaminants
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A lab user “gowning-up” in SNF
How do you build something so small? Requires very clean environment: “clean room” People wear clean room suits (also called “gowns” or “bunny-suits) Huge fans circulate filtered air throughout the facility Wafers are cleaned in liquid solutions between every processing step A lab user “gowning-up” in SNF
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Greg Haugstad at University of Minnesota
Gregory Book and Swaminathan Rajaraman (Swami) at Georgia Tech University Greg Haugstad at University of Minnesota
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