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Bipolar Junction Transistors (BJT) NPNPNP
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BJT Cross-Sections NPN PNP Emitter Collector
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Common-Emitter NPN Transistor Forward bias the BEJ Reverse bias the CBJ
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Input Characteristics Plot I B as f(V BE, V CE ) As V CE increases, more V BE required to turn the BE on so that I B >0. Looks like a pn junction volt-ampere characteristic.
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Output Characteristics Plot I C as f(V CE, I B ) Cutoff region (off) –both BE and BC reverse biased Active region –BE Forward biased –BC Reverse biased Saturation region (on) –both BE and BC forward biased
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Transfer Characteristics
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Large-Signal Model of a BJT KCL >> I E = I C + I B β F = h FE = I C /I B I C = β F I B + I CEO I E = I B (1 + β F ) + I CEO I E = I B (1 + β F ) I E = I C (1 + 1/β F ) I E = I C (β F + 1)/β F
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Transistor Operating Point
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DC Load Line V CC V CC /R C
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BJT Transistor Switch
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BJT Transistor Switch (continued)
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BJT in Saturation
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Model with Current Gain
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Miller Effect v be v ce i out
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Miller Effect (continued)
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Miller Capacitance, C Miller = C cb (1 – A) –since A is usually negative (phase inversion), the Miller capacitance can be much greater than the capacitance C cb This capacitance must charge up to the base-emitter forward bias voltage, causing a delay time before any collector current flows.
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Saturating a BJT Normally apply more base current than needed to saturate the transistor This results in charges being stored in the base region To calculate the extra charge (saturating charge), determine the emitter current
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The Saturating Charge The saturating charge, Q s storage time constant of the transistor
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Transistor Switching Times
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Switching Times – turn on Input voltage rises from 0 to V 1 Base current rises to I B1 Collector current begins to rise after the delay time, t d Collector current rises to steady-state value I CS This “rise time”, t r allows the Miller capacitance to charge to V 1 turn on time, t on = t d + t r
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Switching Times – turn off Input voltage changes from V 1 to –V 2 Base current changes to –I B2 Base current remains at –I B2 until the Miller capacitance discharges to zero, storage time, t s Base current falls to zero as Miller capacitance charges to –V 2, fall time, t f turn off time, t off = t s + t f
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Charge Storage in Saturated BJTs Charge storage in the Base Charge Profile during turn-off
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Example 4.2
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Waveforms for the Transistor Switch V CC = 250 V V BE(sat) = 3 V I B = 8 A V CS(sat) = 2 V I CS = 100 A t d = 0.5 µs t r = 1 µs t s = 5 µs t f = 3 µs f s = 10 kHz duty cycle k = 50 % I CEO = 3 mA
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Power Loss due to I C for t on = t d + t r During the delay time, 0 ≤t ≤t d Instantaneous Power Loss Average Power Loss
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During the rise time, 0 ≤t ≤t r
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Average Power during rise time
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Total Power Loss during turn-on
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Power Loss during the Conduction Period
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Power Loss during turn off Storage time
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Power Loss during Fall time
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Power Loss during Fall time (continued)
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Power Loss during the off time
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The total average power losses
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Instantaneous Power for Example 4.2
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BJT Switch with an Inductive Load
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Load Lines
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