1. ELECTROLUMINESCENCE OF A DEVICE BASED ON A NEW TERBIUM β-DIKETONATE COMPLEX A.Pereira 1,G. Conte 2, H. Gallardo 2, W. G. Quirino 3, K. C. Teixeira 3, C. Legnani 3 M. Cremona 3, 4 and I. H. Bechtold 1 1 and 2 Department of Chemistry, UFSC 1 Department of Physics and 2 Department of Chemistry, UFSC 3 3 LADOR– Laboratory of Organic Devices, Inmetro 4 Department of Physics,PUC-RJ Laboratório de Sistemas Anisotrópicos E-mail: ales_p18@yahoo.com.br

2. OLED Technology:

3. The use of trivalent rare earth ions complexes containing organic moiety is a possible route to obtain pure color emission with a theoretical upper limit of inner quantum efficiency near 100%. These complexes emit with a narrow emission spectrum characteristic of intra-atomic transitions of the central rare earth ion, covering the spectral range from ultraviolet to infrared, which make them with organic ligands candidates for full color OLEDs applications. Motivation:

4. Objectives: To check the feasibility of using a novel Terbium complex as electroluminescent layer.

5. Materials: The structures of the complexes. (a) Tb(N-PA)3Phen and Tb(N-PA)3Bipy; (b) Tb(FURA)3Phen and Tb(FURA)3Bipy. ([1,2,5]tiadiazol[3,4f][1,10]fenantrolina) complex-Tb (acetilacetona-ACAC) Hole transport molecule Y. Fu et al(2008).

6. Experimental setup: The devices were fabricated with the following structure: ITO/NPB(50nm)/Complex-Tb(50nm)/Al(150nm). OLED bilayer LADOR-INMETRO

7. Characterization: Absorption spectrum at room temperature from thin films of Terbium complex. Photoluminescence spectra at room temperature from thin films of Terbium complex.

8. Characterization: Orange!!! IxV plot, from OLED based on a new Terbium complex as a function of bias voltage. Electroluminescence spectra of the Terbium complex. Picture of a produced OLED.

9. Conclusions and perspectives: The electroluminescence spectrum shows two large bands resulting an orange light emission, which was not observed in the photoluminescence. It indicates a possible problem in the charge transport or in the manufacturing architecture. The device shows a typical diode behavior with a low threshold bias voltage of about 10V. To investigate the observed effect in the electroluminescence: - ligands contribution - OLED architecture

10. Financial Supports: INEO – Instituto Nacional de Eletrônica Orgânica