1. MAPLD99 Total Dose and SEE of Metal-To-Metal Antifuse FPGA

2. MAPLD99 Outline 1. Introduction to M2M antifuse FPGA 2.Total Ionizing Dose 3. Single Event Effects –SEU –SEL –SEDR 4. Summary

3. MAPLD99 RT54SX 16k, 32k, 72k gate antifuse FPGA 0.6  m (3.3/5.0V), 0.25  m (2.5/3.3/5.0V) CMOS technology Commercial foundry

4. MAPLD99 Sea-of-Module Architecture

5. MAPLD99 Sea-of-Module Architecture

6. MAPLD99 Basic Logic Modules Y D0 D3 D2 D1 DB A0B0A1B1 SaSb CLKA, CLKB DC IN HCLK S0 DINS1 PSETB DQ CLRB CKPCKS Y Combinatorial CellRegister Cell

7. MAPLD99 M2M Antifuse Metal 3 Metal-to-Metal Antifuse Metal 2 Via Metal 1 Contact Silicon

8. MAPLD99 SX Pin-to-Pin Performance n Fast, Flexible Array Logic and Routing u Fast pin-to-pin timing T FC 0.3ns Numbers shown for A54SX16-3, worst case commercial conditions Input Output T INYH/INYL 1.5ns T IRD1 0.3ns T PD 0.6ns T RD1 0.3ns T DLH/DHL 1.6ns 6.1nsTotal Pin-to-Pin Timing, 32-bit Decode T PD 0.6ns Array C-Cells T PD 0.6ns T FC 0.3ns

9. MAPLD99 RTSX TID 0.6  m –Tolerance limited by static I CC –100krad(Si) 0.25  m –Tolerance limited by static I CC –Shallow trench isolation –65krad(Si) before improvement, 250krad(Si) after improvement

10. MAPLD99 0.6  m RTSX TID

11. MAPLD99 0.6  m RTSX TID (Proton)

12. MAPLD99 0.25  m RTSX TID Total Dose (krads (Si)) 050100150200250 0 20 40 60 80 100 120 Wafer 12 Wafer 20 Notes 1. Bias levels are 5.0VDC, 2.5VDC 2. Parts are in Pb/Al box per 1019.5 3. Dose rates between 15.7 and 16.6 rad(Si)/min Static I CC (mA)

13. MAPLD99 0.6  m RTSX SEU

14. MAPLD99 User Level SEU Hardening

15. MAPLD99 0.25  m RTSX SEU

16. MAPLD99 SEU-Hard TMR Flip-Flop FF 1 FF 2 FF 3 Voter IN OUT CLK

17. MAPLD99 Single Strike Double Upset in SEU Hard FF N+ Heavy Ion Active Junction in FF1 Active Junction in FF2 Simulated by using Space Rad 4.0, Multiple-Bit Upset module

18. MAPLD99 Single Event Latchup RT54SX is latchup immune, i.e., LET th >120MeV-cm 2 /mg

19. MAPLD99 Single Event Dielectric Rupture Heavy Ion Top Metal Bottom Metal Dielectric V CC Antifuse structure 1: Both 0.6  m and 0.25  m are immune to SEDR. Antifuse structure 2: 0.6  m –Original structure has LET th =40MeV-cm 2 /mg at V CC =3.3V. –New recipe is immune (no rupture at right angle incidence, LET=60MeV-cm 2 /mg, V CC >3.6V). E-field M2M ~3.3V/700A ~0.5MV/cm E-field ONO ~5V/100A ~5MV/cm

20. MAPLD99 SUMMARY TID –RTSX has good tolerance, 50k-100krad(Si). –Smaller geometry shows potential for higher tolerance. SEU –0.6  m RTSX shows better tolerance than ACT2, ACT3 (ONO). FF LET th : SX=11, ACT2/3=4 CC LET th : SX>40, ACT2/3=20 –0.25  m RTSX have hardened FF option. SEL –RT/RHSX are immune. SEDR –RT/RHSX are immune.