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There are no FREE lunches
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Anti-reflective coating A anti-reflective coating is deposited on the top side to help transmit more of the incident sunlight
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Because the top side conductor has been already fabricated and only low temperature process can be used, the typical process to deposit anti-reflective coating is PECVD
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PECVD P lasma E nhanced C hemical V apor D eposition PECVD is used extensively in the manufacture of microelectronic devices because it allows for lower temperature processes
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Just like in sputtering, a plasma is formed in an electric field The plasma allows for the deposition or growth of films at lower temperature than would normally be required in just a CVD process
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Trion ORION III PECVD tool
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Typical PECVD Process The wafer is loaded in into the vacuum chamber The chamber is pumped to vacuum conditions The wafer is heated to deposition temperatures (300 o C typical) Gas are introduced that will acts as precursors to the film growth
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Typical PECVD Process (continued) Chamber pressure is regulated to provide an equilibrium pressure ( gas in, pumping out) RF power is applied to the chamber creating a plasma A film is grown based on the gases introduced
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For our solar cell We will be using SiO2 as the antireflective coating There are better anti-reflective coatings but not available in the Cameron clean room such as SiN or ITO
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Trion ORION III PECVD Chamber lid open Heated substrate stage Can accommodate up to 8” wafers
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Trion ORION III water chiller and dry (no oil) chemical vacuum pump
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Trion ORION III process gas cabinet TEOS (tetraethylorthosilicon) SiO 2 precursor
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The blue tint to the solar cell is the anti-reflective coating
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