1. Lampoly etch profiles Courtesy of Rishi Kant (Coral name: rik) Performed: 11/18/08 Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000 angstroms thick). Etch: Standard Recipe 1, with 300 seconds in the Main Etch. Thermal Oxide Etch Rate: 240 A/min, excellent uniformity (50 A total thickness variation across the wafer) Single Crystal Silicon Etch Rate: 2900 – 3400 A/min, depending on feature size (loading effect.) Observations: Isolated structures show very good sidewall profiles. Etching holes yields sloped and W-shaped profiles depending on the size of the holes (this is historically normal.)

2. Isolated structures