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Electronic Properties of Ceramic Films

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Presentation on theme: "Electronic Properties of Ceramic Films"— Presentation transcript:

1 Electronic Properties of Ceramic Films
Tim Jurasevich Advisor: Dr. Kvam

2 Outline Background Info Goals Procedure Results Conclusions

3 Perovskites ABO3 Middle atom can move Cubic above Curie temperature
Structure changes below Curie temperature Permanent dipole

4 Conductive Metal Oxides
Middle atom won’t move Not capacitive Ferroelectric Fatigue

5 SrRuO3 Orthorhombic a = 5.57 Å b = 7.86 Å c = 5.54 Å Nearly Tetragonal

6 LaNiO3 Rhombohedral a = 5.45 Å Low degree of tilt Nearly Cubic

7 Research Goals Create Strontium Ruthenate (SrRuO3) and Lanthanum Nickelate (LaNiO3) thin films Sol-gel process Refine process Investigate properties of the thin films

8 Sol-gel process SrRuO3 sol-gel Black More black LaNiO3 sol-gel
RuCl3 Ethanol Water SrAc2 H2O2 Black More black LaNiO3 sol-gel La(NO3)3 2-methoxyethanol MEA NiAc2 Dark Blue

9 Sol-gel process Spin coated Annealed SrRuO3 on Silicon LaNiO3 on Glass
800°C 700°C

10 Visual Inspection

11 Sputtering Platinum Platinum stripes sputtered along the edges and in the middle Lots of platinum required for good electrode

12 Optical Microscopy

13 X-Ray Diffraction

14 X-Ray Diffraction

15 X-Ray Diffraction

16 Resistivity SrRuO3 LaNiO3 ρ = 350 µΩ∙cm Ideal: 300 µΩ∙cm ρ = 700 µΩ∙cm

17 Conclusions SrRuO3 and LaNiO3 can be prepared by sol-gel methods
Both thin films exhibit fairly low resistivities Process variations affect crystallographic texture

18 Thank You Questions? Comments?


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