Presentation is loading. Please wait.

Presentation is loading. Please wait.

Highly Linear Power Amplifiers for Broadband Wireless Applications Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui,

Similar presentations


Presentation on theme: "Highly Linear Power Amplifiers for Broadband Wireless Applications Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui,"— Presentation transcript:

1 Highly Linear Power Amplifiers for Broadband Wireless Applications Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui, M. Quijije, A. Lawrence, B. Pitman, R. Katz, P. Tran, S. Din, L. Callejo, N. Yamamoto, K. Johnson, R Lai, R. Tsai and D. Streit

2 2 Applications Landscape  Higher data rates dictate highly linear transmit chains  Major contributor to linearity and cost is the driver / power amplifier combination.  Higher data rates dictate highly linear transmit chains  Major contributor to linearity and cost is the driver / power amplifier combination.

3 3 0.15 um T-gate process Breakdown > 8 Volts f T > 85 GHz at Vds > 4 volts G m > 500 mS/mm I max > 500 mA/mm 4mil substrate thickness Flight qualified, commercially proven process GaAs substrate undoped AlGaAs n + -GaAs undoped InGaAsSi plane doping Source Drain Gate TRW Pseudomorphic HEMT Process

4 4 Ea  1.6 eV, Sigma = 0.6 MTF  6X10 10 hours at T j =125 o C TRW 0.15  m PHEMT Process Reliability Typical benchmark, 1X10 6 hrs at 125BC Ta=210C Ta=265C Ta=235C Ta=250C

5 5 Summary of Circuit Performance Part NameAPH478 30 GHz Cell APH496APH497APH502APH473APH474 Freq (GHz) 17-2029-3228-3132-3534-3637-4040-44 Gain (dB)168 15 P 1dB (dBm)30.330.226.826.530.529.5 Density @ P 1dB (Mw/mm) 446436443414519400 P 3dB (dBm)31.5 28 31.531 Density @ P 3dB (Mw/mm) 588 584 588582 I DC @ 5V (mA) 900600540 8101080 Die Size (mm 2 ) 5.021.862.61 3.554.504.25 State of the art output power density enables smaller die size and less DC power dissipation

6 6 37 to 40 GHz Power Amplifier APH473 Die Size = 4.5 mm 2 Power Density @ P 1dB = 400 mW/mm Power Density @ P 3dB = 582 mW/mm

7 7 Performance vs. DC Bias 37 to 40 GHz Power Amplifier

8 8 Performance vs. Temperature Gain Yield at 38.5 GHz 37 to 40 GHz Power Amplifier

9 9 40 to 44 GHz Power Amplifier APH474 Die Size = 4.25 mm 2 Power Density @ P 1dB = 400 mW/mm Power Density @ P 3dB = 582 mW/mm

10 10 17 to 20 GHz Power Amplifier APH478 Die Size = 5.02 mm 2 Power Density @ P 1dB = 446 mW/mm Power Density @ P 3dB = 588 mW/mm

11 11 28 to 31 GHz Driver Amplifier APH496 Die Size = 2.61 mm 2 Power Density @ P 1dB = 443 mW/mm Power Density @ P 3dB = 584 mW/mm

12 12 29 to 32 GHz Power Cell Power Cell Die Size = 1.86 mm 2 Power Density @ P 1dB = 436 mW/mm Power Density @ P 3dB = 588 mW/mm

13 13 32 to 35 GHz Driver Amplifier APH497 Die Size = 2.61 mm 2 Power Density @ P 1dB = 414 mW/mm Power Density @ P 3dB = 584 mW/mm

14 14 34 to 36 GHz Power Amplifier APH502 Die Size = 3.55 mm 2 Power Density @ P 1dB = 519 mW/mm Power Density @ P 3dB = 588 mW/mm

15 15 Higher data rates dictate a need for highly linear transmit chains. A major contributor to linearity and cost is the driver / power amplifier combination. Maximizing the output power density in the driver / power amplifier chain enables reduced die size and DC power consumption. Velocium’s PA MMICs have shown state of the art linearity and power density in a production process. Conclusion


Download ppt "Highly Linear Power Amplifiers for Broadband Wireless Applications Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui,"

Similar presentations


Ads by Google