1. Noise in BJT The objective is to determine, and for a bipolar transistor. The hybrid- model that includes the noise sources is shown below Fig 5-3 The feedback elements. This is OK for frequency <. At frequencies above that value the noise mechanisms are partially correlated. is caused by the thermal noise of the base-spreading resistance. the noise current generator is the shot noise of the total base current, and is the shot noise of the collector current. The 1/f noise contribution is represented by a single noise current generator which flows through the entire base resistance. The spectral density of 1/f noise is given by

2. The exponent  ranges between 1 and 2. The experimental value of K varies over a wide range of values. An alternative expression for 1/f noise is where f L varies from 3.7MHz to 7 MHz. An expression for the 1/f noise voltage generator is where. 1/f noise results from trapping and detrapping of carriers in surface and bulk defect states. Transistors with high at very low collector currents seem to have little 1/f noise as these traps are also recombination centers. Equivalent Input Noise To derive the equivalent input noise we first calculate the total noise at the transistor output, the gain from the source to output, and then divide the output noise by the gain. The output is shorted then the output noise current is

3. For an input signal V s, the output short-circuit current is The transfer gain is The equivalent input noise is therefore For a zero source resistance case Noise in Field Effect Transistors Three main types of noise are found in FETs -- Shot noise, flicker noise and thermal noise The small-signal noise equivalent circuit for an FET is shown below Fig 6-1

4. There are three principle sources of noise in a MOSFET identified as where K F is the flicker noise coefficient I DQ is the quiescent drain current, A F is a constant, f is the frequency. The total noise current at the output drain-current channel is We reflect this noise current to the gate as an equivalent input noise voltage using the K tr reflection coefficient defined as

5. The first term of the above equation is equivalent to a single resistor of value