1. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201- 44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Introduction to Microelectronic Fabrication by Richard C. Jaeger Distinguished University Professor ECE Department Auburn University Chapter 10 Bipolar Process Integration

2. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Copyright Notice © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1.

3. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Standard Buried Collector (SBC) Process Emitter Base CollectorIsolation

4. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors SBC Process

5. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Current Gain & Unity Gain Frequency

6. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Diffusion Lengths

7. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Depletion Layer Extents

8. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Emitter-base Breakdown Voltage

9. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Circular Emitters Circular emitters are used to improve device matching Here a quad of transistors are cross connected to form a differential pair Figure 10.6

10. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Collector-base Breakdown Voltage

11. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Npn Bipolar Transistors Punch-through Voltage

12. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements n + Resistor (Emitter Diffusion) Resistor formed using n+ emitter diffusion into the isolation region Low sheet resistance 10- 50  /square Low breakdown voltage

13. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements p-type Resistor (Base Diffusion) Base diffusion used as a p- type resistor Typical sheet resistance 100-300  /square

14. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements n-type Resistor (Epi Layer) Resistor formed in the an epitaxial tub High sheet resistance 1000-10000  /square

15. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements p-type Pinch Resistor (Also JFET) Base region “pinched” down to increase sheet resistance JFET formed by the same structure

16. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements Substrate pnp Transistor Substrate pnp with transistor collector formed by wafer or “substrate”

17. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements Lateral pnp Transistor Lateral pnp Base width determined by lithography capability Poor current gain and frequency response compared to vertical device

18. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Circuit Elements Schottky Diode Schottky diode can be readily formed by metal contact to a lightly doped n-type semiconductor p-type ring added to eliminate edge breakdown Wilamowski diode [7] adds diffusions to increase breakdown voltage. Depletion layers merge under reverse bias and a breakdown voltage similar to that of a pn junction is achieved.

19. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Process Junction Isolation Adjacent transistors separated by p-diffusion through the epitaxial layer. Diffusion must be wide enough to prevent space charge layers from merging Base-isolation spacing must be large enough so that space charge layers do not merge

20. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. SBC Transistor Layout Design Rules Figure 10.17 SBC transistor layout using the design rules in Table 10.1

21. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Advanced Bipolar Devices Oxide Isolation

22. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Advanced Bipolar Devices Oxide Isolation

23. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Advanced Bipolar Devices Trench Isolation

24. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Advanced Bipolar Devices SiGe HBT

25. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Advanced Bipolar Devices SiGe HBT

26. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Bipolar Isolation Techniques Collector Diffused Isolation Figure 10.22 - Cross section of a transistor fabricated with the CDI process [18]

27. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Bipolar Isolation Techniques Dielectric Isolation

28. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Bipolar Isolation Techniques SIMOX

29. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. BiCMOS Processes CMOS + Bipolar

30. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. BiCMOS Processes CMOS + Bipolar

31. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. BiCMOS Processes CMOS + Bipolar

32. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. BiCMOS Processes CMOS + Bipolar

33. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201-44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Bipolar Process Integration References

34. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN0-201- 44494-1. © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. End of Chapter 10