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Thermoreflectance microscopy and spectroscopy on integrated circuits
M. Bardoux, C. Boué, C. Filloy, D. Fournier, G. Tessier UPR A005 CNRS, ESPCI, 10 Rue Vauquelin, Paris
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1 Thermoreflectance under visible illumination
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DR= DT CCD thermoreflectance imaging 4f < 40 Hz CCD White lamp
Optical measurement of DR (at virtually any wavelength) Filter measurement of DT Microscope Pow.1: f Circuit
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CCD thermoreflectance imaging
FoR j FoRamb t FoDR I1 I2 I3 I4 4f < 40 Hz CCD White lamp Filter DR around 10-5 DT around 0.1 K Resolution 300 nm Microscope Amplitude Pow.1: f Circuit
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Transistor arrays (ST Microelectronics)
Not leaky structures: leaky structures: 13 mm 125 mm IDS = mA, F=1 Hz l=518 nm 125 mm
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Vertical Cavity Surface Emission Lasers (VCSELs)
M Bardoux, ESPCI, S. Bouchoule, A. Bousseksou, LPN Laser emission (1.5 mm) VCSEL Cleavage Vertical temperature distribution
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90 mm 250 mm Side view (substrate, mirror, active layers)
Top view (emission facet) T (°C) Active layers Bragg mirror Substrate 90 mm 250 mm T (°C)
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Numerical circuit 180 nm technology (TIMA Grenoble)
Clock frequency 225 MHz Lock-in at the repetition frequency of the test vectors (7.5 Hz) Thermoreflectance Resolution : 350 nm 80 mm T(K) Backside imaging ?
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2 Near Infrared thermoreflectance
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Thermoreflectance with an InGaAs camera
Si Transparency region 4f < 40 Hz InGaAs CCD White lamp Microscope Non coherent sources eliminate interference in the substrate Pow.1: f
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Near Infrared back side imaging
DR/R X50, 0.6N.A. objective Resolution 2 mm (Diffraction limit : 1.7 mm) Dissipated power : 500 mW
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DR/R Resolution difficult to assess (noisy image) Average of FWHM : 650 nm Effective N.A. : 1.55 Diffraction limit with a 0.42 N.A. objective: 2.4 mm
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3 Thermoreflectance and photoreflectance spectroscopy
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Thermo-/photo- reflectance spectroscopy
Compact fibered spectrometer + focusing lens R and vary sharply due to interference CCD spectrometer Spatial selectivity : a few mm Spectral resolution : 1 nm typ. Sensitivity : DR/R~ in 1 min Filter White Lamp P. Supply 2: 4F Microscope P. Supply 1: F Circuit
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Photoreflectance spectroscopy on passive materials
Amplitude DR/R Measurement l=615 nm F=0.5 Hz Heating l=10.6 mm SiO2 (glass) F=1 Hz CCD spectrometer Filter White Lamp F=3Hz P. Supply 2: 4F Microscope P. Supply 1: F Modulated CO2 laser F=7.5 Hz Sample 1850 mm
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Gold nanospheres in silica (preliminary results)
M. Rashidi, B. Palpant, INSP x10-4 DR/R SiO2 + gold nanospheres (≈ 4 nm) Measurement DT ≈ 3 K t= 68 nm Heating l=10.6 mm Si substrate x10-3 DR/R Model DT=50 K Majid Rashidi, INSP
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Conclusions 1 ) Visible thermoreflectance resolution ≈ 300 nm
precision of calibrated measurement ≈ 5% 2 ) NIR imaging with Solid Immersion Lenses - Resolution : 650 nm at l=1.65 nm, effective N.A.: 1.55 - Resolution improvement : use narrow band illumination better contact SIL / substrate 3) Spectroscopy Fast and sensitive DR/R~ in 1 min Good spectral resolution (1 nm) Performance spectrometer dependent DR/R~ should be achievable in 1 min with a e- well depth.
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