1. Micro-Architecture Techniques for Sensor Network Processors Amir Javidi EECS 598 Feb 25, 2010

2. 2 Motivation Low performance tasks Long duration Small energy supplies

3. 3 Papers [1] L. Nazhandali, B. Zhai, J. Olson, A. Reeves, M. Minuth, R. Helfand, S. Pant, T. Austin, and D. Blaauw, “Energy optimization of subthreshold voltage sensor network processors,” in Proc. Int. Symp. Computer Architecture, 2005, pp. 197–207. [2] S. Hanson, M. Seok, Y-S. Lin, Z. Foo, D. Kim, Y. Lee, N. Liu, D. Sylvester, and D. Blaauw, “A low voltage processor for sensing applications with picowatt standby mode,” IEEE Journal of Solid- State Circuits, pp. 1145-1155, April 2009.

4. 4 Energy Budget 2g Vanadium oxide battery: 720 mAh Powers ARM 720T processor at 100MHz for 45hrs Thin film zinc/silver oxide battery: 100 μAh/cm 2, 1.55 V For area of 1mm 2 average current must be 114pA (power consumption of 177 pW) for 1 year lifetime

5. 5 Performance Requirement Blood pressure monitoring (low rate): Sensing @ 800 bps  10,000 inst/sec EEG brain signal monitoring (high rate): 3200 bps  56,000 inst/sec for filtering, analysis, compression, and storage

6. 6 Architecture/Circuit Techniques Sub-threshold implementation (V dd < V th ) ISA optimization Voltage scaling Power gating Stack forcing Data/instruction compression

7. 7 Subthreshold design Why subthreshold? Processor operating in lowest super-threshold voltages deliver too much performance Performance of sensor network processor applications on embedded targets. Number of times faster than real-time the processor can handle the worst case data stream rate [1].

8. 8 Subthreshold Circuit Design

9. 9 Subthreshold Energy Optimization Subthreshold Energy as a function of Voltage[1] V min energy optimal supply voltage

10. 10 ISA Optimization Why ISA optimization? Memory dissipates static/dynamic energy Memory size leakage Tradeoff between memory size and control logic size Logic Vs memory energy tradeoff [1]

11. 11 ISA Optimization Impact of ISA optimization on code size and control logic complexity

12. 12 Micro-Architecture Sensor network processor micro-architecture

13. 13 Performance vs. Energy

14. 14 Results Sensor network processor ROM/RAM memory 8 bit data path 235 mV supply 182 KHz 1.38 pJ/inst 4.1x faster than necessary for mid-bandwidth 25 years lifetime with 2g vanadium oxide battery (720 mAh)

15. 15 Phoenix Processor Focus on lowering standby power Older 0.18μm technology Custom leakage-optimized instruction set Simple data memory compression Ultra-low-leakage memory cell Huge tradeoff between standby power and area and active energy

16. 16 Phoenix Processor

17. 17 CMOS Technology Newer technology (65 nm) High subthreshold leakage Small capacitance Older technology (180 nm) 7.7x larger 647x less total energy consumption

18. 18 Voltage Scaling Supply voltage of 0.5 V Mix of subthreshold and near-subthreshold devices Retentive gates high-V th ~ 0.7 V Non-retentive gates medium-V th ~ 0.5 V High-V th consumes ~ 1000x less leakage power

19. 19 Power Gating Medium-V th power switch Smaller switch ~ 1000x Less area overhead Less charging/discharging power overhead

20. 20 CPU Architecture 2 stage, 8bit data width, 10bit inst. Width ALU (add, subtract, shift) No multiplier Simple decoder (min set of operations)

21. 21 ISA Optimization Minimized instruction width (10 bit) Reduces IMEM standby power dissipation Efficient operand encoding Explicit operand: more flexibility, more frequently used Implicit operand: less flexibility, less frequently used

22. 22 Memory Design 64x10b SRAM (IMEM) Application specific instructions No power gating 64x10b ROM (IROM) Commonly used instructions Power gated 52x40b SRAM (DMEM) Data compression Fine grain power gating

23. 23 Memory Design Leakage reduction High-V th bitcell transistors Cross coupled inverters: Stacked transistors Increased length (0.35μm to 0.50μm) ~2x leakage reduction Robustness Full swing read-buffer Power gated

24. 24 Results Phoenix processor 0.5 V power supply 106 KHz 2.8 pJ/cycle 297 nW 226 nW active mode 35.4 pW standby mode 915 x 915 μm 2

25. Questions?