1. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved Modelling of RF LDMOS Transistors Using BSIM3 B. Senapati, K. Ehwald, I. Shevchenko, V. Dykyy, and F. Fürnhammer

2. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved Outline LDMOS device cross-section of LDMOS LDMOS model SPICE sub-circuit model for LDMOS using bsim3v3 JFET to model the pinch-off the drift-region Measurements and extraction setup for RF and DC measurements extraction tool Results DC results and RF results Conclusion

3. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved LDMOS Device Structure LDMOS is fabricated into an advanced industrial 0.25µm BiCMOS process. Source and substrate are common together to reduce the source resistance and inductance Length of the drift region is 1  m Gate length, width and finger number are 0.28  m, 5.6  m and 10, respectively K.-E. Ehwald et al., High Performance RF LDMOS Transistors with 5nm Gate Oxide in 0.25µm SiGe:C BiCMOS Technology, IEDM Tech. Dig, 2001

4. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved SPICE Sub-circuit Model of LDMOS BSIM3v3 model for the intrinsic MOS JFET model for the drift-region AD, AS, PD and PS of BSIM3 are zero

5. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved Measurement Setup DC-measurements (4142B) using Kelvin probes CV measurements (4284A) RF measurements (PNA E8364A) 45 MHz - 50 GHz Temperature range -40 °C - 200 °C Software IC-CAP (version 2002)

6. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved DC and CV Results

7. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved RF Results

8. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2002 - All rights reserved Conclusion LDMOS large signal model has been developed using BSIM3v3 JFET used to model the pich-off of the drift region Model includes dc including qusi-saturation, non- standerd capaciatce and high frequency Model has been verified by comparing simulation with measurement More accurate physical model required for modeling the drift region On-going work is in the Self-heating and temperature modelling