1. Spin Injection Hall Effect: a new member of the spintronic Hall family Symposium Spin Manipulation in Solid State Systems Würzburg, October 8th - 9th, 2009 JAIRO SINOVA Texas A&M University Institute of Physics ASCR Research fueled by: Hitachi Cambridge Jorg Wunderlich, A. Irvine, et al Institute of Physics ASCR Tomas Jungwirth, Vít Novák, et al Texas A&M L. Zarbo

2. 2 Towards a spin-based non-magnetic FET device: can we electrically measure the spin-polarization? Can we achieve direct spin polarization detection through an electrical measurement in an all paramagnetic semiconductor system? Long standing paradigm: Datta-Das FET Unfortunately it has not worked: no reliable detection of spin-polarization in a diagonal transport configuration No long spin-coherence in a Rashba SO coupled system

3. Spin-detection in semiconductors Ohno et al. Nature’99, others Crooker et al. JAP’07, others  Magneto-optical imaging  non-destructive  lacks nano-scale resolution and only an optical lab tool  MR Ferromagnet  electrical  destructive and requires semiconductor/magnet hybrid design & B-field to orient the FM  spin-LED  all-semiconductor  destructive and requires further conversion of emitted light to electrical signal

4. The family of spintronic Hall effects 4 AHE B=0 polarized charge current gives charge-spin current Electrical detection SHE B=0 charge current gives spin current Optical detection SHE -1 B=0 spin current gives charge current Electrical detection j s ––––––––––– + + + + + iSHE I _ F SO _ _ _ majority minority V

5. Utilize technology developed to detect SHE in 2DHG and measure polarization via Hall probes J. Wunderlich, B. Kaestner, J. Sinova and T. Jungwirth, Phys. Rev. Lett. 94 047204 (2005) Spin-Hall Effect 5 B. Kaestner, et al, JPL 02; B. Kaestner, et al Microelec. J. 03; Xiulai Xu, et al APL 04, Wunderlich et al PRL 05 Proposed experiment/device: Coplanar photocell in reverse bias with Hall probes along the 2DEG channel Borunda, Wunderlich, Jungwirth, Sinova et al PRL 07

6. i p n 2DHG material Device schematic - material

7. - 2DHG i p n trench Device schematic - trench

8. i p n 2DHG 2DEG n-etch Device schematic – n-etch

9. VdVd VHVH 2DHG 2DEG VsVs 9 Hall measurement Device schematic – Hall measurement

10. 2DHG 2DEG e h e e ee e h h h h h VsVs VdVd VHVH 10 SIHE measurement Device schematic – SIHE measurement

11. Photovoltaic Cell Reverse- or zero-biased: Photovoltaic Cell trans. signal Red-shift of confined 2D hole  free electron trans. due to built in field and reverse bias light excitation with = 850nm ( well below bulk band-gap energy) σoσoσoσo σ+σ+σ+σ+ σ-σ-σ-σ- σoσoσoσo VLVL 11 -1/2 +1/2 +3/2 -3/2 bulk Transitions allowed for ħω>E g Transitions allowed for ħω<E g -1/2 +1/2 +3/2-3/2 Band bending: stark effect Transitions allowed for ħω<E g

12. n2 + + - - Spin injection Hall effect: Spin injection Hall effect: experimental observation n1 (  4) n2 n1 (  4) n2 n3 (  4) Local Hall voltage changes sign and magnitude along the stripe 12

13. Spin injection Hall effect  Anomalous Hall effect 13

14. and high temperature operation Zero bias- + + -- + + -- Persistent Spin injection Hall effect 14

15. THEORY CONSIDERATIONS Spin transport in a 2DEG with Rashba+Dresselhaus SO 15 For our 2DEG system: The 2DEG is well described by the effective Hamiltonian: Hence

16. 16 spin along the [110] direction is conserved long lived precessing spin wave for spin perpendicular to [110] What is special about ? Ignoring the term for now The nesting property of the Fermi surface:

17.  = -   > 0,  = 0  = 0,  < 0 Effects of Rashba and Dresselhaus SO

18. Spin configurations do not depend on the particle initial momenta. For the same x + distance traveled, the spin precesses by exactly the same angle. After a length x P =h/4mα all the spins return exactly to the original configuration. Physical Picture: Persistent Spin Helix Thanks to SC Zhang, Stanford University 18

19. 19 Persistent state spin helix verified by pump-probe experiments Similar wafer parameters to ours

20. The Spin-Charge Drift-Diffusion Transport Equations For arbitrary α,β spin-charge transport equation is obtained for diffusive regime For propagation on [1-10], the equations decouple in two blocks. Focus on the one coupling S x+ and S z : For Dresselhauss = 0, the equations reduce to Burkov, Nunez and MacDonald, PRB 70, 155308 (2004); Mishchenko, Shytov, Halperin, PRL 93, 226602 (2004) 20

21. Steady state solution for the spin-polarization component if propagating along the [1-10] orientation 21 Steady state spin transport in diffusive regime Spatial variation scale consistent with the one observed in SIHE

22. Understanding the Hall signal of the SIHE: Anomalous Hall effect Simple electrical measurement of out of plane magnetization Spin dependent “force” deflects like-spin particles I _ F SO _ _ _ majority minority V InMnAs 22

23. 23 Anomalous Hall effect (scaling with ρ) Dyck et al PRB 2005 Kotzler and Gil PRB 2005 Co films Edmonds et al APL 2003 GaMnAs Strong SO coupled regime Weak SO coupled regime

24. Intrinsic deflection Electrons have an “anomalous” velocity perpendicular to the electric field related to their Berry’s phase curvature which is nonzero when they have spin-orbit coupling. ~τ 0 or independent of impurity density Electrons deflect first to one side due to the field created by the impurity and deflect back when they leave the impurity since the field is opposite resulting in a side step. They however come out in a different band so this gives rise to an anomalous velocity through scattering rates times side jump. independent of impurity density STRONG SPIN-ORBIT COUPLED REGIME (Δ so >ħ/τ) Side jump scattering V imp (r) Skew scattering Asymmetric scattering due to the spin- orbit coupling of the electron or the impurity. This is also known as Mott scattering used to polarize beams of particles in accelerators. ~1/n i V imp (r) Electrons deflect to the right or to the left as they are accelerated by an electric field ONLY because of the spin- orbit coupling in the periodic potential (electronics structure) E SO coupled quasiparticles Spin Currents 2009

25. 25 WEAK SPIN-ORBIT COUPLED REGIME (Δ so <ħ/τ) Side jump scattering from SO disorder Electrons deflect first to one side due to the field created by the impurity and deflect back when they leave the impurity since the field is opposite resulting in a side step. They however come out in a different band so this gives rise to an anomalous velocity through scattering rates times side jump. independent of impurity density  λ*  V imp (r) Skew scattering from SO disorder Asymmetric scattering due to the spin- orbit coupling of the electron or the impurity. This is also known as Mott scattering used to polarize beams of particles in accelerators. ~1/n i  λ*  V imp (r) The terms/contributions dominant in the strong SO couple regime are strongly reduced (quasiparticles not well defined due to strong disorder broadening). Other terms, originating from the interaction of the quasiparticles with the SO- coupled part of the disorder potential dominate. Better understood than the strongly SO couple regime

26. 26 AHE contribution Type (i) contribution much smaller in the weak SO coupled regime where the SO-coupled bands are not resolved, dominant contribution from type (ii) Crepieux et al PRB 01 Nozier et al J. Phys. 79 Two types of contributions: i)S.O. from band structure interacting with the field (external and internal) ii)Bloch electrons interacting with S.O. part of the disorder Lower bound estimate of skew scatt. contribution

27. Spin injection Hall effect: Theoretical consideration Local spin polarization  calculation of the Hall signal Weak SO coupling regime  extrinsic skew-scattering term is dominant 27 Lower bound estimate

28. 28

29. S. Datta, B. Das, Appl. Phys. Lett. 56 665 (1990). … works only - if channel is 1dimensional - or under Spin Helix conditions for 2D channel Comment 1: Datta-Das type of device

31. The family of spintronics Hall effects SHE -1 B=0 spin current gives charge current Electrical detection AHE B=0 polarized charge current gives charge-spin current Electrical detection SHE B=0 charge current gives spin current Optical detection 31 SIHE B=0 Optical injected polarized current gives charge current Electrical detection

32. 32 －6－－6－ SUMMARY - electrical detection method for Spin current - large signal (comparable to AHE in metallic ferromagnets) - high spatial resolution (~ < 50nm) - nondestructive detection of spin WITHOUT magnetic elements - linear with degree of spin polarization - high temperature operation - first electrical detection of the Spin Helix (coherently precessing spins) - all electrical polarimeter (transfers degree of light polarization into an electrical signal)