1. USC INFORMATION SCIENCES INSTITUTE MOSIS OVERVIEW MSE99 July 19, 1999 César A. Piña http://www.mosis.org

2. USC INFORMATION SCIENCES INSTITUTE THREE PHASES: http://www.mosis.org n Phase I: 1981-1985  DARPA Direct Funded Era: 100% DARPA Funded n Phase II: 1985-1994  Multi-Agency Direct Funding  DARPA: ~80% Subsidized All Undesrsubscribed Runs  NSA, NSF: ~15% Purchased Needed Projects Only  Commercial Customers: ~5% Helped to defray Government Costs by using excess area. n Phase III: 1994-1999  Self-Sustaining Operations  Commercial Customers are Primary Source of Income: ~90%  DARPA: ~5%; NSA/NSF: ~5%

3. USC INFORMATION SCIENCES INSTITUTE TECHNOLOGIES http://www.mosis.org n Supertex SCNA20: 2.00µ  2-metal, 2-poly, NPN, n-well  5V  Analog/Digital  Integrated CMOS MEMs  Orbit Fab purchased by Supertex n AMI ABN: 1.20µ  2-metal, 2-poly, NPN, n-well  5V  Analog/Digital  Integrated CMOS MEMs n HP AMOS14TB: 0.50µ  3-metal, 1-poly,  linear cap, silicide block, n-well  3.3V n AMI C5N: 0.50µ  3 metal, 2 poly, non-silicided, n- well  5V  Analog/Digital n HP GMOS10QA: 0.35µ  4-metal, 1-poly, silicided, n-well  3.3V n TSMC : 0.35µ  polycided, n-well  3-metal, 2-poly, 3.3/5V  4 metal, 1-poly 3.3V  Analog/Digital n TSMC : 0.25µ  5-metal, 1-poly, silicided, n-well  3.3/5v I/O, 2.5/3.3v Core

4. USC INFORMATION SCIENCES INSTITUTE 20x20mm Die From a 0.35µ Multiproject Run

5. USC INFORMATION SCIENCES INSTITUTE Future TECHNOLOGIES http://www.mosis.org n HP/CSP/CSM C07: 0.25µ  5-metal, 1 poly, silicided, n-well, 3.3v I/O,  1.8/3.3v I/O, 1.8v Core, 4Q99  5v I/O, 1.8v Core, 1Q00 n TSMC 0.18µ: 0.18µ  6-metal  2.5/3.3v I/O, 1.5/1./8v Core  2Q00 n Peregrine SOI-SOS: 0.50µ  3 metal layers, various options  3Q99  QUAL RUN IN PROGRESS n TSMC 0.15µ: 0.15µ  2.5/3.3v I/O, 1.2-1.5v Core  4Q01 n HP/CSP/CSM C/G04: 0.15µ  6-metal, 1 poly, silicided, Cu  1.5/3.3v I/O, 1.5v Core  4Q01 n TSMC 0.13µ: 0.13µ  6-metal, 1 poly, silicided, Cu  1.8/2.5v I/O, 1.0/1.2v Core  2Q02 n HP/CSP/CSM C/G04: 0.13µ  6-metal, 1 poly, silicided, Cu  1.8/3.3v I/O, 1.2-1.3v Core  4Q02

6. USC INFORMATION SCIENCES INSTITUTE 21st Century MOSIS CMOS will continue to be the dominant technology for the foreseeable future  Only known circuit configuration that draws 0 power when not switching CMOS feature sizes will continue to decrease  0.25  0.18  logic 5 yearsCOST  0.25  and 0.18  will probably be the “workhorse” logic technologies for the next 5 years - because of COST  19980.35  - 1998 - I line lithography (365nm) OK  19990.25  - 1999 -248nm excimer lasers-fused silica ok  “Leading Edge”  20010.18  - 2001- 193nm laser-close to short limit for refractive optics  2003 -0.15  - 2003 - Scaling of 0.18 m  2005 - Lots of engineering problems but doable0.13  - 2005 - Lots of engineering problems but doable

7. USC INFORMATION SCIENCES INSTITUTE PHOTOLITHOGRAPHY: CONTROLS THE COST  Full wafer lithography (FWL) is lowest cost Large payload: >5000sqmm 2um is lowest practical limit  1X Stepper Lithography is next Medium payload: ~ 900 sqmm 1.2um is lowest practical limit  5X Stepper Lithography is next Small Payload: 290 - 400 sqmm max. Technology of choice for 1.2um and below  1um defect on mask is 0.2um on wafer 0.5 um - 1.6um mask tech. straightforward Below 0.5um masks become VERY expensive  BUT - (Fortunately) THE RETICLE SIZE IS INCREASING AS THE FEATURE SIZE DECREASES!

8. USC INFORMATION SCIENCES INSTITUTE MOSIS EDUCATIONAL PROGRAM n What is the MOSIS Educational Program?  The MOSIS Educational Program provides free fabrication of integrated circuits designed by students in organized classes at accredited U.S. educational institutions. n Who is eligible for funding?  Funding is available to accredited U.S. universities who agree to the following terms: Designs must be sent to MOSIS in CIF or GDSII format via the Internet. A report must be sent to MOSIS for each fabricated circuit. n Further Details can be found at:  http://www.mosis.org

9. USC INFORMATION SCIENCES INSTITUTE MOSIS EDUCATIONAL PROGRAM Funding Sources n AMI has donated 4 wafer runs/yr (1.2  /1.5  ) n HP has donated 2 wafer runs/yr (0.5  ) n IBM has donated 2-3 wafer runs (0.35  ) n MOSIS contributes:  All administrative costs  The Educational share of the 2  wafer costs  0.35  fabrication for a selected number of projects from advanced classes in the regularly scheduled runs. (The 0.25  runs will also become available in the near future) BUT n NSF funding decreasing, BUT some funding remains and will help transition the program to a self-sustaining mode. n Various industrial firms and professional societies have made cash contributions