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First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki
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Some facts to remember for the next slides Data is preliminary Measurements and evaluation was done in 4 days only including the weekend some plots can be arranged in a better way and the data is incomplete! (sorry!!!) The biasing was done with conductive rubber residuals on AC pads sometimes gives contact problems We used the testing of the teststructures to train personal After irrad.: Strip scan for ST at Vbias=900V (it was stable) The evaluation is not complete!
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Materials Hamamatsu Full Sensor (W6b 4919-39) Thickness: 500 m Resistivity: 4.6 k cm Hamamatsu teststructures (same batch no. 35-41) –Have to look up all other parameters according to the HPK tables ST Full Sensor (04439218) Thickness: 500 m Resistivity: 5.1 k cm
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Simulated LHC conditions with respect to surface damage! Vbias
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Irrad. Assembly
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IV and CV on both Sensors
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Strip Parameters on Ham. Sensor
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Interstrip capacitance of HPK sensor (1 neighbour) 100 fF
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Strip Parameters on ST Sensor
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IV and CV on Ham. TS
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Strip Parameters on Ham. TS
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Comparison: Diode vs. Minisensor
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High fluence ( 2.5x10^14 n eq /cm 2 ) FS Ham.@ 1V (AC & bias) TS H39 @ 1V TS H38 @ 12V TS H37 @ 100V TS H35 & H36 @ 0V TS H40 @ 100V (only bias) 33MeV
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Low fluence ( 1,5x10^14 n eq /cm 2 ) FS ST @ 1V TS ST26 @ 1V TS H41 @ 0V
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Fluence estimate (preliminary) Leakage current on TS H39 diode at -8±1°C: I(-8°C) = 5 A Leakage current at 20°C (I(T)=I 0 *T 1.5 *e -1.2eV/kT ): I(20°C)= (860 ± 190) A Volume of diode is 72 mm 3 => I(20°C)/V = (11.9 ± 2.6)mA/cm 3 => Fluence is about (3.0±0.6)e14 n eq /cm 2 ( =4e-17A/cm) Leakage current on TS H41 I(-9°C) = 1.5 A Fluence is about (1.1±0.3)e14 n eq /cm 2 Hamamatsu: ST:
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Leakage Current on Ham. Diode after Irrad. with high Fluence
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Leakage Current on Ham. Diode after Irradiation with low Fluence
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CV on Ham. Diode after Irradiation
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CV on Sensors after Irradiation
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IV for Sensors after Irradiation
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Coupling Capacitance on ST Sensor after Irradiation
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Poly Resistance on ST Sensor after Irradiation
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Leakage Current ST FS after irrad. 1-4nA before irrad.
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Other Paramters on ST Sensor Interstrip Capacitance (one neighbour): Before Irradiation3.5 pF After Irradiation3.6 pF Interstrip Resistance: Before Irradiation > 10G –No definite numbers after irrad
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Strip Leakage Current on Ham. Sensor after Irradiation
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Poly Resistance on Ham. Sensor after Irradiation 300V, -13°C 160V
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Interstrip Capacitance (one neighbour) vs. Bias Voltage after Irradiation
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Strip Leakage Current on TS after Irradiation
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Coupling Capacitance on TS after Irradiation
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Poly Resistance on TS after Irradiation
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Interstrip Capacitance on TS after Irradiation (2 neighbours) Some bad contacts due to residuals of conductive rubber!?!?!
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Interstrip Resistance on TS after Irradiation (very preliminary)
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Depletion Voltage and Fluence
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Conclusion: Procedure for the production Evaluation on minisensor and FS only Irradiation with protons is feasible with small bias voltage near to final LHC condition We have to evaluate the irrad. sensor with higher Vbias The IQC in Karlsuhe is ready with some possible improvements, learned at this system test level Some additonal measurments and x-ray studies are ongoing and helpfull for the surface damage understanding but are not essential for the approval of an ingot!
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End of irradiation
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„I-t“
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Backside of HPK sensor
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First GCD measurements
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CMS-GCD-Structures Diode Gate Diode Gate Diode
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Measurement of the CMS square GCD structure and Rose structure in literature Some non-understood points. KA Rose
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GCD after proton irradiation
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GCD Summary Proton irradiation has shown that bulk leakage current is much higher than interface currents at least at full dose and is therefore negligible. (see also NIM A444 (2000) 605-613) What about effects of type inversion? However further studies at Karlsruhe are possible by using the KA X-Ray source.
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Bias contacts
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