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MEMS FOR HIGH POWER APPLICATIONS Bruce C Kim and Rahim Kasim.

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Presentation on theme: "MEMS FOR HIGH POWER APPLICATIONS Bruce C Kim and Rahim Kasim."— Presentation transcript:

1 MEMS FOR HIGH POWER APPLICATIONS Bruce C Kim and Rahim Kasim

2 Plan-view of the MEMS switch ( The dimensions are approximately 300 x 1000 µm2)

3 Isometric-view of the MEMS switch. Fig. Top diagram depicts the switch in the open position; the gap between the gold contact and conduction path is approximately 1 µm. Bottom diagram depicts the switch in the closed position

4 Fabrication ( Metallization of 2X2 array)

5 Fabrication Anchors contact

6 Fabrication 1000 μm 100 μm Gap = 1.5 μm Anchor = 4.2 μm 110 μm 20 μm

7 Fabrication Gap = 1.5 μm Anchor = 4.2 μm

8 Fabrication Anchors Nickel Bridge Contact conduction

9 Testing Fig. Testing of the MEMS switch

10 Testing Fig. Testing of the MEMS switch

11 Testing – (I-V Closed)

12 Testing- (I-V open)

13 Conclusion Extensive testing of 4X4 array underway (ratings and number of cycles). Packaged array on PCB and testing. Integration with diodes.


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