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MEMS FOR HIGH POWER APPLICATIONS Bruce C Kim and Rahim Kasim
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Plan-view of the MEMS switch ( The dimensions are approximately 300 x 1000 µm2)
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Isometric-view of the MEMS switch. Fig. Top diagram depicts the switch in the open position; the gap between the gold contact and conduction path is approximately 1 µm. Bottom diagram depicts the switch in the closed position
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Fabrication ( Metallization of 2X2 array)
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Fabrication Anchors contact
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Fabrication 1000 μm 100 μm Gap = 1.5 μm Anchor = 4.2 μm 110 μm 20 μm
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Fabrication Gap = 1.5 μm Anchor = 4.2 μm
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Fabrication Anchors Nickel Bridge Contact conduction
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Testing Fig. Testing of the MEMS switch
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Testing Fig. Testing of the MEMS switch
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Testing – (I-V Closed)
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Testing- (I-V open)
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Conclusion Extensive testing of 4X4 array underway (ratings and number of cycles). Packaged array on PCB and testing. Integration with diodes.
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