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Lecture #18 OUTLINE pn junctions (cont’d)
Deviations from the ideal I-V R-G current series resistance high-level injection Narrow-base diode Reading: Chapter 6.2, 6.3 EE130 Lecture 18, Slide 1
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Effect of R-G in Depletion Region
The net generation rate is given by R-G in the depletion region contributes an additional component of diode current IR-G EE130 Lecture 18, Slide 2
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For reverse bias greater than several kT/q,
Ip In EE130 Lecture 18, Slide 3
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For forward biases, Ip In EE130 Lecture 18, Slide 4
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Effect of Series Resistance
EE130 Lecture 18, Slide 5
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High-Level Injection Effect
As VA increases, the side of the junction which is more lightly doped will eventually reach HLI: significant gradient in majority-carrier profile Majority-carrier diffusion current reduces the diode current from the ideal (p+n junction) (n+p junction) EE130 Lecture 18, Slide 6
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Summary: Deviations from Ideal I-V
Forward-bias current Reverse-bias current EE130 Lecture 18, Slide 7
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Derivation of Narrow-Base Diode I-V
We have the following boundary conditions: With the following coordinate system: Then, the solution is of the form: x' x' ' NEW: x' c EE130 Lecture 18, Slide 8
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Applying the boundary conditions, we have:
Therefore Note that so that EE130 Lecture 18, Slide 9
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Excess Carrier Profiles: Limiting Cases
Long base (xc’): EE130 Lecture 18, Slide 10
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Dpn is a linear function of x Jp is constant (no recombination)
Narrow base (xc’0): Dpn is a linear function of x Jp is constant (no recombination) EE130 Lecture 18, Slide 11
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For a p+n junction, then:
where EE130 Lecture 18, Slide 12
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Note: and If xc’ << LP: EE130 Lecture 18, Slide 13
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Narrow (Short) Base Diode I-V Equation
Let and Then, EE130 Lecture 18, Slide 14
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Summary: Current Flow in pn Junctions
The diode current is dominated by the term associated with the more lightly doped side: p+n diode: pn+ diode: i.e. current flowing across junction is dominated by carriers injected from the more heavily doped side EE130 Lecture 18, Slide 15
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