1. Si and Ge NW FETs, NiSi-Si-NiSI conductor hetero-structures and manufacturing steps Csaba Andras Moritz Associate Professor University of Massachusetts, Amherst andras@ecs.umass.edu

2. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 2 From Nanodevices to Nano Computing Lauhon et al., Nature 420,57 Carbon Nanotubes (CNT) Semiconductor Nanowires (NW) Nanoarray Transistors or Diodes Nanocircuit Nanocomputing

3. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 3 Nanowires From Lieber, Nanoscience: Building a Big Future

4. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 4 Nanowires

5. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 5 Nanowire Materials From Lieber, Nanoscience: Building a Big Future

6. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 6 Comparison of NWs and CNTs Controlled doping of CNTs is not possible Specific growth of semiconducting and conducting tubes is not possible  These properties depend sensitively on diameter and helicity in CNTs Semiconductor NWs overcome these limitations  Vast knowledge in the semiconductor industry  Remain semiconducting independent on diameter  Controlled doping demonstrated, e.g., with Boron for p-type and Phosphorus for n-type for SiNWs Change the conductivity of SiNWs over many orders of magnitude Measured with Transmission Electron Microscopy (TEM)

7. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 7 P and N-type SiNW (FETs) Yi Cui et al, The Journal of Physical Chemistry, 2000

8. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 8 Electron charging Yi Cui et al, 2000

9. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 9 Specializing NWs Control of composition, structure, size, doping Diameter controlled during growth  As small as 3nm Stable electronic characteristics

10. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 10 FETs PFETs and NFETs in SiNWs, GaNi NWs Both PFETs and NFETs in same material with Si and Ge NWs and CNTs  Greytak et al, American Institute for Physics, 2004  IBM Nanoscience Group lead by Davouris demonstrated CNTs

11. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 11 Ge based complementary FETs Complementary doping demonstrated in Si, GaN, and now Ge  Has been used to assemble inverters, bipolar transistors and light emitting diodes  Achieving p-FET and n-FET in same material was challenging Ge has higher electron and hole mobility than Si and both P and N type devices have been demonstrated

12. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 12 Synthesis of p and n-type Ge NWs Core-shell method, doping with PH3 for N and B2H6 for P From Greytak et al, 2004

13. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 13 P and N-type Ge FETs Ge NWs with Ti S-D contacts Vd – drain- source bias voltage, Id the current through the channel,Vg- gate voltage Curves characteristic of MOS FETs Yield 86% From Greytak et al, 2004

14. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 14 Comparison with Si and GaN FETs Higher on currents than in those devices Higher mobilities and smaller Vth possible  Deposition of Ge oxynitride or SiGe capping layer  Optimization of the doping procedure

15. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 15 Nanoarrays Nanowires are aligned with Longmuir- Blodgett fluidic alignment Can be packed into NW arrays

16. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 16 Nanoarrays

17. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 17 Metal/semiconductor nanowire heterostructures MW-NW contacts  Lithographically defined metal contacts with electrodes  Problem: size scale – much larger than nanoscale  Cannot be used for interconnect between FETS on a grid Integrated interconnect and contact solution based on selective transformation of Si NWs into NiSi nanowires  Yue Wu et al, Nature 2004.

18. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 18 Why NiSi? Has been shown to have low resistivity (10 uOhmcm) Compatibility with Si manufacturing FET with NiSi/p-Si/NiSi junction  Si channel of 20-nm in a 10-nm diameter structure Ability to form ohmic contacts with p and n type silicon High maximum currents – 29-nm NiSi-NW would carry 1.84 mA  Current density comparable to CNTs

19. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 19 NiSi/Si Nanowire Heterostructures Wu et al., Nature Vol. 430, pp. 61, 2004 Deposit Ni (green) to NW (blue) React at 550 。 C to form NiSi NW (brown) Etch to remove excess Ni Lithography maskSelectively deposit NiForm NiSi segmentsNWs as masksForm NiSi segments on Si NWs Si NWs

20. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 20 Modulation doped NWs for decoders

21. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 21 Very large scale integration Nanowires assembled to form structures of 1,000 to 30,000 Assembled and interconnected > 80% yield

22. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 22 Our approach: Nano circuits based on nanoarrays and FETs Why not use 2-terminal devices?  There are several approaches resembling PLA and cell-based FPGA like nanoFabrics, nanoPLA, CMOL  We are interested in building processor datapaths  Need for latching etc  Much higher density can be achieved even in 2-D fabrics Even in 2-terminal arrays there is a need for signal restoration based on FETs (see nanoPLA) We want to know what the benefits would be and what the challenges are from an architects point-of-view

23. Copyright - Csaba Andras Moritz, ECE, UMass Amherst 23 Manufacturing steps for large scale 2-D computing with NW FETs (NASICs) Combination of self-assembly and nano lithography Self-assembly  Form NW array with correct doping of wires  Initial metallization between crosspoints using one set of wires as the mask  Create channel regions for FETs at cross-points Nanolitography and conventional lithography  Additional specialization of crosspoints with NiSi metallization  Sub 10-nm imprint lithography Stephen Chou et al, University of Minnesota, 1997 Not based on modification of chemical structure by radiation, its resolution is immune to many factors that limit the resolution of conventional lithography, such as wave diffraction, scattering and interference in resist, and the chemistry of the resist and developer  Micro-nano interfacing selective chemical modification (Zhong et al Science 2003) Several other proposals (coded NWs radial doping, Distributed pin array, etc)  CMOS support structures