Presentation is loading. Please wait.

Presentation is loading. Please wait.

Noise and Random Telegraph Signals in Nanoelectronic Devices Zeynep Çelik-Butler Electrical Engineering Department University of Texas at Arlington Arlington,

Published byEmory Leslie Harrington Modified over 9 years ago

Similar presentations

Presentation on theme: "Noise and Random Telegraph Signals in Nanoelectronic Devices Zeynep Çelik-Butler Electrical Engineering Department University of Texas at Arlington Arlington,"— Presentation transcript:

1 Noise and Random Telegraph Signals in Nanoelectronic Devices Zeynep Çelik-Butler Electrical Engineering Department University of Texas at Arlington Arlington, Texas, 76019 celikbutler@ieee.org

2 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 2 Outline u Motivation: Problems Encountered as the Devices Shrink, Frequencies Increase, and Voltages Reduce u Improved Model for 1/f Noise in MOSFETs u Random Telegraph Signals in MOSFETs u Complex RTS u Extraction of trapping parameters using RTS

3 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 3 UTA - Noise Characterization Facilities  6' x 6' x 8' Shielded Room  3 Spectrum and Signal Analyzers, f=1  Hz - 20 GHz.  3 Cryostats, T= 2 K to 350 K.  Various Lock-ins, Preamps, System Controllers, Battery Operated Sources etc.  Optical Equipment  Computer Software for Modeling

4 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 4 Problems Encountered as the Devices Shrink, Frequencies Increase, and Voltages Reduce u Signal-to-noise ratio decreases. u Noise models based on large number of electrons break down. u Quantum effects become dominant.

5 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 5 Signal to Noise Ratio Decreases u For a MOSFET  Start from W=100  m, L=10  m, t ox =800Å, N SS =4x10 10 eV - 1 cm -2. u Assume scaling factor is K. u Assume trap and surface state densities remain the same. u Increase in noise level due to the K 1/2 law chosen for t ox. u Unpredictability of noise level for K>20. u N SS is actually a two dimensional Poisson variable.

6 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 6 Large Area Noise Models Break Down uSingle electron, single trap effects. N SS =4x10 10 eV -1 cm -2, W=1  m, L=0.1  m. ECEC EVEV EFEF SiO 2 Si kT=26 meV 1 trap per channel

7 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 7 Large Area Noise Models Break Down Break-down of large-area models for sub-micron channel length. A=N t (cm -3 eV -1 ) B=  eff N t (cm -1 eV -1 ) C=  2  eff 2 N t (cm eV -1 ) A=B 2 /(4C) Independent parameters:  and N t

8 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 8 Large Area Noise Models Break Down V gs -V T = -1 V V ds = -50 mV

9 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 9 Large Area Noise Models Break Down

10 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 10 Large Area Noise Models Break Down Modified 1/f noise model that takes into account threshold variation along the channel. For simplicity assume two regions: –  V,  L, V T2,, A 2, B 2, C 2 – V ds -  V, L-  L, V T1, A 1, B 1, C 1 –  L<<L, V T  V T1 – A 1 = A 2, since N t1 = N t2 – B 1 2 /C 1 = B 2 2 /C 2 = 4A – I 1 = I 2 = I d –  eff1 =  eff2, Independent parameters: N t,  1,  2, V T2, and  V

11 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 11 Large Area Noise Models Break Down Modified 1/f noise model that takes into account threshold variation along the channel.

12 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 12 RTS in MOSFETs Random Telegraph Signals: single electron switching. 11 00 IdId

13 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 13 RTS in MOSFETs Random Telegraph Signals (RTS) with a Lorentzian on 1/f spectum. Time Scale seconds Time Scale milliseconds Frequency (f) PSD

14 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 14 2 RTS levels 1 RTS process

15 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 15 3 RTS levels 2 RTS processes

16 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 16 5 RTS levels 4 RTS processes

17 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 17 COMPLEX RTS Complex random telegraph signals due to multiple traps

18 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 18 RTS in MOSFETs RTS can be used to characterize trapping sites. RTS modeling.

19 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 19 RTS in MOSFETs RTS can be used to characterize trapping sites. Position of the trap along the channel, y T Position of the trap in the oxide, x T Trap energy, E Cox - E T Screened scattering coefficient, 

20 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 20 Trapping Parameters Through RTS in MOSFETs x T =2.7 nm y T /L=0.6 E Cox -E T =3.04 eV

21 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 21 Trapping Parameters Through RTS in MOSFETs

22 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 22 Trapping Parameters Through RTS in MOSFETs

23 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 23 Effects of Quantization Increase in effective energy band-gap: change in  e and  c Shift in carrier distribution: change in C ox

24 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 24 3-D Treatment of RTS

25 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 25 2-D Treatment of RTS -  c and  e

26 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 26 2-D Treatment of RTS From Stern - Howard wave-function:

27 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 27 2-D Treatment of RTS Calculate the inversion carrier concentration assuming they are located primarily at E 0 :

28 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 28 2-D Treatment of RTS -  c and  e To first order, the ratio is not affected by quantization.

29 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 29 RTS Measurements MDD n-MOSFETs W eff  L eff = 1.37  0.17  m 2 T ox = 4 nm V T = 0.375 V for V SB = 0 V strong inversion, linear region V DS = 100 mV V SB = 0 - 0.4 V, V GS = 0.5 - 0.75 V

30 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 30 E Cox -E T and z T from  c and  e ln(  c /  e ) V SB =0 V

31 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 31 E Cox -E T and z T from  c and  e ln(  c /  e ) V SB =0.4 V

32 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 32 E Cox -E T and z T from  c and  e T ox =4 nm

33 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 33 Dependence of  e on V SB  e (s) V GS =0.75 V V GS =0.55 V

34 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 34 Dependence of  c on V SB  c (s) V GS =0.55 V V GS =0.75 V V GS =0.65 V

35 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 35 c n Extracted from  c and  e

36 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 36 2-D Treatment of RTS - Amplitude Question: How does quantization affect number and mobility fluctuations? –Number fluctuation through N –Mobility fluctuations through oxide charge scattering,  t.

37 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 37 Extraction of Scattering Coefficient Mobility Fluctuations: –Using Surya’s 2D surface mobility fluctuations model,

38 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 38 Calculation of Scattering Coefficient Considering a single trap: N t (E,z) = N t  (E-E T )   (z-z T ) 

39 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 39 RTS Amplitude

40 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 40 Extraction of Scattering Coefficient  = 2.91x10 -13 - 9.93x10 -15 ln(N) T ox =4 nm

41 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 41 Extraction of Scattering Coefficient W  L = 1.2  0.35  m 2 z T =0.25 nm T ox =8.6 nm

42 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 42 Possible Reasons for Discrepancy Threshold non-uniformity along the channel is not taken into account. Location of the trap along the channel Variation of the channel voltage from source to drain is neglected.  N/  N t  1 is not valid, even in strong inversion, for very thin oxides.

43 Noise and Reliability Laboratories, Zeynep Celik-Butler, celikbutler@ieee.org 43 ACKNOWLEDGEMENTS This work has been supported by NSF, THECB-ATP, SRC, TI, Legerity, Motorola and ST-Microelectronics.

Download ppt "Noise and Random Telegraph Signals in Nanoelectronic Devices Zeynep Çelik-Butler Electrical Engineering Department University of Texas at Arlington Arlington,"

Similar presentations

MOS – AK Montreux 18/09/06 Institut dÉlectronique du Sud Advances in 1/f noise modeling: 1/f gate tunneling current noise model of ultrathin Oxide MOSFETs.

MOS – AK Montreux 18/09/06 Institut dÉlectronique du Sud Advances in 1/f noise modeling: 1/f gate tunneling current noise model of ultrathin Oxide MOSFETs.
R. van Langevelde, A.J. Scholten Philips Research, The Netherlands

R. van Langevelde, A.J. Scholten Philips Research, The Netherlands
UTA Noise and Reliability Laboratory 1 Noise Modeling at Quantum Level for Multi- Stack Gate Dielectric MOSFETs. Zeynep Çelik-Butler Industrial Liaisons:

UTA Noise and Reliability Laboratory 1 Noise Modeling at Quantum Level for Multi- Stack Gate Dielectric MOSFETs. Zeynep Çelik-Butler Industrial Liaisons:
Latent Noise in Schottky Barrier MOSFET

Latent Noise in Schottky Barrier MOSFET
Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation H. Tsuchiya A. Svizhenko M. P. Anantram.

Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation H. Tsuchiya A. Svizhenko M. P. Anantram.
Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.

Electrical Techniques MSN506 notes. Electrical characterization Electronic properties of materials are closely related to the structure of the material.
1 ELEC 422 Applied Integrated Circuit Design Section 2: MOS Fundamentals Chuping Liu [Adapted from Rabaey’s Digital Integrated Circuits, ©2003, J. Rabaey.

1 ELEC 422 Applied Integrated Circuit Design Section 2: MOS Fundamentals Chuping Liu [Adapted from Rabaey’s Digital Integrated Circuits, ©2003, J. Rabaey.
1ECE 584, Summer 2002Brad Noble Chapter 3 Slides Early Voltage in MOSFETs Due to channel length modulation:

1ECE 584, Summer 2002Brad Noble Chapter 3 Slides Early Voltage in MOSFETs Due to channel length modulation:
EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.

EE466: VLSI Design Lecture 02 Non Ideal Effects in MOSFETs.
Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.

Spring 2007EE130 Lecture 33, Slide 1 Lecture #33 OUTLINE The MOS Capacitor: C-V examples Impact of oxide charges Reading: Chapter 18.1, 18.2.
Electrical Noise Wang C. Ng.

Electrical Noise Wang C. Ng.
© Estoril – 19 September 2003 Advanced Compact Modeling Workshop MOSFETs Flicker Noise Modeling For Circuit Simulation Montpellier University A. Laigle,

© Estoril – 19 September 2003 Advanced Compact Modeling Workshop MOSFETs Flicker Noise Modeling For Circuit Simulation Montpellier University A. Laigle,
EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

EE415 VLSI Design The Devices: MOS Transistor [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]
Advanced Semiconductor Physics ~ Dr. Jena University of Notre Dame Department of Electrical Engineering SIZE DEPENDENT TRANSPORT IN DOPED NANOWIRES Qin.

Advanced Semiconductor Physics ~ Dr. Jena University of Notre Dame Department of Electrical Engineering SIZE DEPENDENT TRANSPORT IN DOPED NANOWIRES Qin.
Outline Introduction – “Is there a limit?”

Outline Introduction – “Is there a limit?”
The metal-oxide field-effect transistor (MOSFET)

The metal-oxide field-effect transistor (MOSFET)
Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.

Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.
Introduction to CMOS VLSI Design Nonideal Transistors.

Introduction to CMOS VLSI Design Nonideal Transistors.
Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!

Spring 2007EE130 Lecture 36, Slide 1 Lecture #36 ANNOUNCEMENTS Updated information for Term Project was posted on 4/14 Reminder: Coffee Hour today at ~4PM!
Full –Band Particle-Based Analysis of Device Scaling For 3D Tri-gate FETs By P. Chiney Electrical and Computer Engineering Department, Illinois Institute.

Full –Band Particle-Based Analysis of Device Scaling For 3D Tri-gate FETs By P. Chiney Electrical and Computer Engineering Department, Illinois Institute.

Similar presentations

Ads by Google