Digital Integrated Circuits A Design Perspective

Name: Digital Integrated Circuits A Design Perspective
Uploaded: 2017-06-29T15:46:03+00:00
Duration: PTH1M1S47
Description: Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective
Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002

Chapter Overview Memory Classification Memory Architectures
The Memory Core Periphery Reliability Case Studies

Semiconductor Memory Classification
Non-Volatile Read-Write Memory Read-Write Memory Read-Only Memory Random Non-Random EPROM Mask-Programmed Access Access 2 E PROM Programmable (PROM) SRAM FIFO FLASH LIFO DRAM Shift Register CAM

Memory Timing: Definitions
Read-access is from read request time to the time data is available on the output Write-access is from the write request to the final writing of the input data to the memory

Memory Architecture: Decoders
bits M bits S S Word 0 Word 0 S 1 Word 1 A Word 1 S 2 Storage Storage Word 2 A Word 2 cell 1 cell N words Decoder A S K 2 1 N 2 2 Word N 2 2 Word N - 2 S N 2 1 Word N 2 1 Word N - 1 K = log N 2 Input-Output Input-Output ( M bits) ( M bits) Intuitive architecture for N x M memory Too many select signals: N words == N select signals K = log 2 N Decoder reduces the number of selected signals

Array-Structured Memory Architecture
Problem: ASPECT RATIO or HEIGHT >> WIDTH Amplify swing to rail-to-rail amplitude Selects appropriate word

Hierarchical Memory Architecture
Advantages: 1. Shorter wires within blocks 2. Block address activates only 1 block => power savings

Block Diagram of 4 Mbit SRAM
Clock generator CS, WE buffer I/O Y -address X x1/x4 controller Z Predecoder and block selector Bit line load Transfer gate Column decoder Sense amplifier and write driver X – row address Y – column address Z – block address Block 1 Global row decoder 128 K Array Block 0 Subglobal row decoder Subglobal row decoder Block 31 Block 30 Local row decoder [Hirose90]

Contents-Addressable Memory
Data (64 bits) Every row that satisfies the validity check (matches the mask bits) will activate the validity bits I/O Buffers Commands Comparand Data pattern to be matched Mask Priority encoder passes Only the valid rows and selects the one with the highest address in case of the multiple matches CAM Array Control Logic R/W Address (9 bits) Address Decoder ProrityEncoder 2 9 words 64 bits

Memory Timing: Approaches
Multiplexed addressing Smaller number of pins needed since row and column addresses are sent sequentially Strobe signals RAS and CAS are used to read them Complete addressing Complete address is presented at once with sensing circuits to detect transitions on the address buss DRAM Timing Multiplexed Addressing SRAM Timing Self-timed

Read-Only Memory Cells
Bit line (BL) is resistively clamped to the ground, so its default value is 0 Diode disadvantage – no electrical isolation between bit and word lines BL is resistively clamped to VDD, so its default value is 1 WL BL 1 VDD GND Diode ROM MOS ROM 1 MOS ROM 2

MOS OR ROM BL [0] BL [1] BL [2] BL [3] WL [0] V WL [1] WL [2] V WL [3]
DD WL [1] WL [2] V DD WL [3] V bias Pull-down loads

MOS NOR ROM WL [0] V Pull-up devices GND WL [1] WL [2] GND WL [3] BL
DD Pull-up devices WL [0] GND WL [1] WL [2] GND WL [3] BL [0] BL [1] BL [2] BL [3]

MOS NOR ROM Layout Programming using the Active Layer Only
Cell (9.5l x 7l) Programming using the Active Layer Only diffusion is added to create transistors GND Polysilicon GND Metal1 Diffusion Metal1 on Diffusion VDD VDD VDD VDD Connected to VDD through pMOS

MOS NOR ROM Layout Programming using the Contact Layer Only
Cell (11l x 7l) GND Programming using the Contact Layer Only contacts are added to create transistors Polysilicon Metal1 GND Diffusion Metal1 on Diffusion VDD VDD VDD VDD Connected to VDD through pMOS

MOS NAND ROM V DD Pull-up devices BL [0] BL [1] BL [2] BL [3] WL [0] WL [1] WL [2] WL [3] All word lines high by default with exception of selected row

MOS NAND ROM Layout Programming using the Metal-1 Layer Only
Cell (8l x 7l) Programming using the Metal-1 Layer Only No horizontal contact to GND necessary; Loss in performance compared to NOR ROM drastically reduced cell size Polysilicon Diffusion Metal1 on Diffusion Add metal to eliminate transistor (short circuit)

NAND ROM Layout Programming using Implants Only Cell (5l x 6l)
Polysilicon Threshold-altering implant Implant switches transistor on permanently thus eliminating it in ROM this results in a very small layout area (2 times smaller than NOR cell) Metal1 on Diffusion

Equivalent Transient Model for MOS NOR ROM
DD C bit r word c WL BL Model for NOR ROM Word line parasitics Wire capacitance and gate capacitance Wire resistance (polysilicon) Bit line parasitics Resistance not dominant (metal) Drain and Gate-Drain capacitance

Equivalent Transient Model for MOS NAND ROM
DD Model for NAND ROM BL C r L bit c r bit WL word c word Word line parasitics Similar to NOR ROM Bit line parasitics Resistance of cascaded transistors dominates Drain/Source and complete gate capacitance

Decreasing Word Line Delay

Precharged MOS NOR ROM V f pre DD Precharge devices WL [0] GND WL [1] WL [2] GND WL [3] BL [0] BL [1] BL [2] BL [3] PMOS precharge device can be made as large as necessary, but clock driver becomes harder to design.

Non-Volatile Memories The Floating-gate Avalanche injection MOS transistor (FAMOS)
D Source Drain t ox t ox n + p n +_ Substrate Schematic symbol Device cross-section

Floating-Gate Transistor Programming
20 V 10 V 5 V D S Avalanche injection 0 V - 5 V D S Removing programming voltage leaves charge trapped 5 V - 2.5 V D S Programming results in higher V T . Hot electrons go through the oxide and are trapped reducing floating gate voltage Typically new threshold is around 7 V so 5 V supply is not sufficient to turn transistor on, so the device is disabled

A “Programmable-Threshold” Transistor
Shifted threshold effectively switches transistor off permanently Shift in the threshold depends on the charge injected onto the floating gate Injected charges are well insulated by silicon dioxide and can stay there with power off for many years. Floating gate used in almost all nonvolatile memories (EPROM, EEPROM, Flash)

Erasable-Programmable Read-Only Memory (EPROM)
EPROM is erased by shining ultraviolet light through a transparent package window UV makes the oxide slightly conductive by generation of electron-hole pairs The erasure process is slow (seconds to minutes) Programming takes 5-10 msec Erasing can be repeated up to a thousand times Threshold is difficult to control after many erasures so special on-chip circuitry is required to control it High current required during programming

Floating Gate Tunneling Oxide FLOTOX Transistor EEPROM
Source Drain V 20 – 30 nm -10 V GD 10 V n 1 n 1 Substrate p 10 nm Fowler-Nordheim tunneling I-V characteristic FLOTOX transistor Smaller voltage is required to program and programming is reversible by changing the voltage sign

EEPROM Cell BL WL V Absolute threshold control is hard
Programmed transistor might be in depletion mode hard to turn off by word-line signal 2 transistor cell Design is larger than EPROM device Thin oxide is hard to make Erase-program can be repeated 105 times WL V DD

Flash EEPROM Control gate p- substrate drain Programming 12 V on gate
Flash EPROM combines density of EPROM with versatility of EEPROM Programming performed by avalanche hot-electron injection (fast 1-10msec) Erasure of the complete chip is done using tunneling (careful control >100ms) No extra access transistor needed Control gate Erasure 12 V on source p- substrate Floating gate Thin tunneling oxide ~10 nm n + source drain Programming 12 V on gate

Cross-sections of NVM cells
Flash EPROM Courtesy Intel

Basic Operations in a NOR Flash Memory― Erase
All transistors erased Read back and repeat if erase is still needed

Basic Operations in a NOR Flash Memory― Write
Programming requires 12V ant the gate and 6V at the drain with 0V source

Basic Operations in a NOR Flash Memory― Read
In read operation the programmed transistor stores 1 as it is switched off permanently NOR Flash memories have Fast random read time Slow erasure and programming time Need precise control of thresholds

NAND Flash Memory Courtesy Toshiba High dielectric material –
Unit Cell Word line(poly) Source line (Diff. Layer) High dielectric material – oxide-nitride-oxide for large CFG Select transistors Large storage density lower cost Fast programming nsec Fast serial access Courtesy Toshiba

NAND Flash Memory Word lines Select transistor Bit line contact
All contacts between word line are eliminated resulting in 40% smaller cell than NOR structure During erasure all transistor are depletion mode obtained by setting 20V at the source During program the selected word line is set to 20V to store “1” increasing its threshold During read both select transistors are enabled and read proceeds as in the NAND ROM Word lines Select transistor Bit line contact Source line contact Active area STI Courtesy Toshiba

New Nonvolatile Memories
FRAM – Ferroelectric RAM Uses programmable capacitors Dielectric cristals polarize under electric field Very high density, many read/write cycles, Low power MRAM – Magnetoresistive RAM Similar to magnetic core memories Spin electronic or tunneling magnetic resistance

Characteristics of State-of-the-art NVM

Read-Write Memories (RAM)
STATIC (SRAM) Data stored as long as supply is applied Large (6 transistors/cell) Fast Differential DYNAMIC (DRAM) Periodic refresh required Small (1-3 transistors/cell) Slower Single Ended

6-transistor CMOS SRAM Cell
WL V DD M M 2 4 Q Q M M 6 5 M M 1 3 BL BL

CMOS SRAM Analysis (Read)
WL V DD BL M 4 BL Q = Q = 1 M 6 M 5 V M V V DD 1 DD DD C C bit bit Initially BL and BLbar are precharged. Assume that cell stores 1 When the WL goes high BLbar is discharged low Must keep Qbar voltage rise below the nMOS threshold (0.4V) to avoid flipping the cell

CMOS SRAM Analysis (Read)
1.2 1 Cell ratio 0.8 0.6 0.4 Design for cell ratio in the green zone 0.2 0.5 1.2 1 1.5 2 2.5 3 Voltage Rise (V) Cell Ratio (CR)

CMOS SRAM Analysis (Write)
BL = 1 Q M 4 5 6 V DD WL

CMOS SRAM Analysis (Write)
Must pull down cell voltage VQ below the nMOS threshold (0.4V)

6T-SRAM — Layout VDD GND Q WL BL M1 M3 M4 M2 M5 M6

Resistance-load SRAM Cell
3 R L V DD WL Q 1 2 4 BL For large resistor values use undoped polysilicon with sheet resistance in Tohm/sq An alternative solution uses low quality parasitic thin-film PMOS (TFT) with OFF current 10-13A Static power dissipation -- Want R L large Bit lines precharged to V DD to address t p problem

Static CAM Memory Cell ••• ••• Incoming data on Bit and Bit_bar
Word ••• Wired-NOR Match Line Match M1 M2 M7 M6 M4 M5 M8 M9 M3 int S Incoming data on Bit and Bit_bar are compared with the stored data S and S_bar Match line is precharged high ••• ••• If there is a match the internal signal int is grounded and match stays high Otherwise int is pulled high and match goes low

SRAM Characteristics

3-Transistor DRAM Cell No constraints on device ratios
WWL BL 1 M X 3 2 C S RWL V DD T D No constraints on device ratios Reads are non-destructive Value stored at node X when writing a “1” = V WWL -V Tn

3T-DRAM — Layout BL2 BL1 GND RWL WWL M3 M2 M1

1-Transistor DRAM Cell Storage capacitance Bit-line is precharged
Write: C is charged or discharged by asserting WL and BL. S Read: Charge redistribution takes places between bit line and storage capacitance D V BL PRE – (V BIT C S + ) = Voltage swing is small; typically around 250 mV.

DRAM Cell Observations
1T DRAM requires a sense amplifier for each bit line, due to charge redistribution read-out. DRAM memory cells are single ended in contrast to SRAM cells. The read-out of the 1T DRAM cell is destructive; read and refresh operations are necessary for correct operation. Unlike 3T cell, 1T cell requires presence of an extra capacitance that must be explicitly included in the design. When writing a “1” into a DRAM cell, a threshold voltage is lost. This charge loss can be circumvented by bootstrapping the word lines to a higher value than VDD

Sense Amp Operation D V (1) (0) t Sense amp activated
PRE BL Sense amp activated Word line activated

1-T DRAM Cell Cross-section Layout
Capacitor Metal word line Poly SiO 2 Field Oxide n + Inversion layer induced by plate bias M word 1 line Diffused bit line Polysilicon plate Polysilicon gate Cross-section Layout Uses polysilicon-diffusion capacitance Expensive in area

Poly-diffusion capacitor 1T-DRAM

Advanced 1T DRAM Cells Stacked-capacitor Cell Trench Cell
Word line Cell plate Capacitor dielectric layer Insulating Layer Cell Plate Si Capacitor Insulator Transfer gate Isolation Refilling Poly Storage electrode Storage Node Poly Si Substrate 2nd Field Oxide Trench Cell Stacked-capacitor Cell

CAM in Cache Memory Hit Logic Address Decoder
ARRAY Input Drivers Tag Hit Address SRAM Sense Amps / Input Drivers Data R/W Hit Logic Address Decoder Cash memory is used to store frequently accessed data to lower the memory access time and power. In cash CAM stores addresses and SRAM stores data. Once the address of requested data matches the one in CAM Hit signal goes high and data is read from SRAM otherwise the external slow memory must be read

Periphery Decoders Sense Amplifiers Input/Output Buffers
Control / Timing Circuitry

Row Decoders Collection of 2M complex logic gates
Organized in regular and dense fashion (N)AND Decoder - followed by inverter NOR Decoder

Hierarchical Decoders
Multi-stage implementation improves performance • A 2 3 WL 1 NAND decoder using 2-input pre-decoders

Dynamic Decoders 2-input NOR decoder 2-input NAND decoder
Precharge devices GND GND V DD WL 3 WL 3 WL WL 2 2 WL 1 WL 1 WL WL V f A A A A DD 1 1 A A A A 1 1 f 2-input NOR decoder Identical to NOR ROM 2-input NAND decoder Identical to NAND ROM

4-input pass-transistor based Column Decoder
S BL 1 2 3 D 2-input NOR decoder Advantages: speed (tpd does not add to overall memory access time) Only one extra transistor in signal path Disadvantage: Large transistor count

4-to-1 tree based Column Decoder
BL BL BL BL 1 2 3 A A A 1 A 1 D Number of devices drastically reduced Delay increases quadratically with # of sections; prohibitive for large decoders Solutions: buffers progressive sizing combination of tree and pass transistor approaches

Decoder for circular shift-register
V DD R WL f 1 2 • In serial access memories read or write address changes sequentially Only one WLi is active (a pointer) and shifts by one with clock f R is used for reset

Sense Amplifiers Idea: Use Sense Amplifer small s.a. transition input
C D V × I av = make V as small as possible small large Idea: Use Sense Amplifer small transition s.a. input output

Differential Sense Amplifier
V DD M M 3 4 y Out bit M M bit 1 2 SE M Directly applicable to SRAMs. Gain Asense=-gm (ro2||ro4) gm is transconductance of the input transistors 5

Differential Sensing ― SRAM
V DD BL EQ Diff. Sense Amp (a) SRAM sensing scheme (b) two stage differential amplifier SRAM cell i WL - x Output PC M 3 1 5 2 4 SE y Precharge bit lines by pulling PC_bar low Disable precharge to read Set SE to activate the sense amplifier Inputs from memory

Latch-Based Sense Amplifier (DRAM)
EQ BL BL V DD SE SE Initialized in its meta-stable point with EQ Once adequate voltage gap is created, sense amp enabled with SE Positive feedback quickly forces output to a stable operating point.

Charge-Redistribution Amplifier
V ref BL V V L M S 1 Vin C small M M C 2 3 large Transient Response Concept Vs prechrged to VDD and VL to Vref-Vth M1 is cut off When M2 pulls down M1 conducts and Vs is quickly lowered to equalize VL

Charge-Redistribution Amplifier― EPROM
V DD SE M Load 4 Out C Cascode out V M device casc 3 C col Column WLC M decoder 2 BL C EPROM M BL 1 WL array

Single-to-Differential Conversion
S.A. Cell - x Output WL V ref BL + How to make a good Vref for differential amplifier? Must deliver x_bar smaller than x if “1” is stored and larger than x if “0” is stored

Open bitline architecture with dummy cells
BLL L 1 R … BLR V DD SE EQ Dummy cell Bit line divided into left and right halves to reduce capacitance Dummy cells are added for reference When EQ signal is raised BLL and BLR are precharged to VDD/2 and L and L_bar are enabled charging Dummy cell to VDD/2 When reading Li word activate both Li and L When reading Ri word activate both Ri and L_bar

DRAM Read Process with Dummy Cell
3 3 2 2 BL BL V V 1 1 BL BL 1 2 3 1 2 3 t (ns) t (ns) reading 0 reading 1 3 EQ WL 2 V SE 1 1 2 3 t (ns) control signals

Voltage Down Converter
Memories require different level of voltages Boosted word-line voltage VDD+Vtn Precharge half VDD voltage Reduced internal VDD power supply Negative substrate bias voltage - + V DD REF bias M drive DL Equivalent Model IR IL- IR IL This circuit delivers the reference voltage to VDL When VDL<VREF => PMOS drive gate is discharged increasing VDL When VDL>VREF=> PMOS drive gate is charged increasing VDL

Charge Pump - Transistors M1 and M2 are connected as diodes.
The charges stored at capacitor Q=Cpump(VDD-VT) When B rises above Vload by more than threshold the Vload increases Maximum load voltage Vload rises to 2*(VDD-VT) – higher than VDD

DRAM Timing Total of 24 timing constraints must be observed

RDRAM Architecture network mux/demux memory array Data bus Clocks
Very high speed packet transfer protocol is used to transfer large amount of data Narrow bus uses several clock cycles to transfer the data mux/demux network memory array Data bus Clocks Column Row demux packet dec. Bus k * l

Address Transition Detection
SRAM memories are triggered by events detected by ATD circuits DELAY t d A 1 N 2 V DD ATD …

Reliability and Yield

Trends in DRAM Parameters
4K 10 100 1000 64K 1M 16M 256M 4G 64G Memory Capacity (bits / chip) C D (fF) S Q (fC) V smax (mV) DD (V) = 2 ( + ) bit line capacitance voltage swing storage charge storage capacitance power supply voltage are reduced in new technologies From [Itoh01]

Open Bit-line Architecture —Cross Coupling
Word line selected creates charge redistribution Dummy line selected to compensate charge redistribution EQ WL WL WL WL WL WL 1 C D C D 1 WBL WBL BL BL C Sense C BL BL Amplifier C C C C C C Charge redistribution If both sides of memory array were symmetrical then the injected bit line noise would be compensated as a common mode signal for sense amplifiers

Folded-Bitline Architecture
Sense Amplifier C WL 1 WBL D BL EQ x y … Better matching of BL BL_bar capacitances, so the cross-coupling noise can be suppressed

Transposed-Bitline Architecture
SA C cross (a) Straightforward bit-line routing (b) Transposed bit-line architecture equalizes cross coupling noise in BL and BL_bar BL ‘ ‘’

Sources of Power Dissipation in Memories
PERIPHERY ROW DEC selected non-selected CHIP COLUMN DEC nC DE V INT f mC C PT I DCP ARRAY m n m(n - 1)i hld mi act DD SS = S i D +S iact active selector current ihld data retention current CDE decoder capacitance CPT peripheral capacitance IDCP static peripheral current VINT internal supply voltage From [Itoh00]

Noise Sources in 1T DRam substrate BL Adjacent BL -particles WL
cross electrode a -particles leakage S WL BL substrate Adjacent BL WBL Capacitance Cs must be above 30fF otherwise a single a-particle can destroy its charge Free neutrons from cosmic rays carry 10 time more charges than alpha particles Memories covered with polymide to protect against alpha radiation Error correction codes used to correct most failures

Alpha-particles -particle a WL V BL SiO n
DD BL SiO 2 n + + - - + - + - + - Alpha particle have energy 8-9 MeV And penetrates silicon up to 10mm depth + - + 1 Particle generates ~ 1 Million electron-hole pairs This is comparable with the 50 fF capacitance storage at 3.5V

Memory Yield Yield curves at different stages of process maturity
(from [Veendrick92]) Memory yield problem is fought using redundancy and error correction

Redundancy Row Decoder Row Address Redundant rows Fuse : Bank
columns Memory Array Row Decoder Column Column Decoder Address

Error-Correcting Codes
Example: Hamming Codes with e.g. B3 Wrong 1 = 3

Redundancy and Error Correction

Data Retention in SRAM (A)
SRAM leakage increases with technology scaling yet for 64-Gb memory leakage current should be less than 3.5 aA at 25C Reduce leakage by turning off unused memory blocks (cashes) Increase thresholds by using body biasing Increase resistance in the leakage path Lower the supply voltage Lower the junction temperature Scale down the refresh period 1.30u 1.10u 900n 700n 500n 300n 100n 0.00 .600 1.20 1.80 Factor 7 m CMOS m m CMOS VDD Ileakage (A)

Suppressing Leakage in SRAM
V DD low-threshold transistor V V DD DDL sleep V DD,int sleep V DD,int SRAM SRAM SRAM cell cell cell SRAM SRAM SRAM cell cell cell V SS,int sleep Inserting Extra Resistance Reducing the supply voltage

Data Retention in DRAM Data retention (standby) current Active current Estimated current distribution for DRAM generations From [Itoh00]

Case Studies Programmable Logic Array SRAM Flash Memory

PLA versus ROM Programmable Logic Array Main difference
structured approach to random logic “two level logic implementation” NOR-NOR (product of sums) NAND-NAND (sum of products) IDENTICAL TO ROM! Main difference ROM: fully populated PLA: one element per minterm Note: Importance of PLA’s has drastically reduced 1. slow 2. better software techniques (mutli-level logic synthesis) for random logic design

Programmable Logic Array
Pseudo-NMOS PLA V DD GND GND GND GND GND GND GND V X X X X X X f f DD 1 1 2 2 1 AND-plane OR-plane

Dynamic PLA AND-plane OR-plane f GND V f f f V X X X X X X f f GND AND
DD f OR f OR f AND V X X X X X X f f GND DD 1 1 2 2 1 AND-plane OR-plane

Clock Signal Generation for self-timed dynamic PLA
Self-timing is recommended in PLA for maximum performance Dummy AND row in PLA estimates maximum loading condition for the required precharge time Worst case discharge time is estimated in a similar way f t pre eval AND OR (a) Clock signals (b) Timing generation circuitry Dummy AND row

PLA Layout

4 Mbit SRAM Hierarchical Word-line Architecture
To improve performance and reduce power consumption in large memories the word line is hierarchically divided and sections are activated as needed

Bit-line Circuitry Block Bit-line select ATD load BEQ Local WL
Memory cell B / T B / T CD CD CD I / O I/O line I / O Sense amplifier

Sense Amplifier (and Waveforms)
I/O Lines Address Data-cut ATD BEQ SEQ DATA Vdd GND SA, SA I / O I / O SEQ Block select ATD BS SA BS SA SEQ SEQ SEQ SEQ DATA De i BS

1 Gbit Flash Memory From [Nakamura02]

Writing Flash Memory Final Distribution Evolution of thresholds
10 8 10 6 Number of cells 10 4 Read level (4.5 V) 10 2 10 0V 1V 2V 3V 4V Vt of memory cells Evolution of thresholds Final Distribution During erasure all bits are programmed to become depletion devices It takes four cycles of write/erase to establish all device threshold > 0.8 V From [Nakamura02]

125mm2 1Gbit NAND Flash Memory
32 word lines x 1024 blocks Charge pump 2kB Page buffer & cache 10.7mm 16896 bit lines 11.7mm From [Nakamura02]

125mm2 1Gbit NAND Flash Memory
Technology m p-sub CMOS triple-well 1poly, 1polycide, 1W, 2Al Cell size m2 Chip size mm2 Organization x 8b x 64 page x 1k block Power supply 2.7V-3.6V Cycle time ns Read time　 s Program time 200s / page Erase time ms / block From [Nakamura02]

Semiconductor Memory Trends (up to the 90’s)
Memory Size as a function of time: x 4 every three years

Semiconductor Memory Trends (updated)
From [Itoh01]

Semiconductor Memory Trends
There was an apparent shift in memory market due to the increase of flash memory use for video and other personalized storage devices other than personal computers SOC technology implements systems integrated with memories and processors on a single die Challenges of making even bigger and denser memories with lower market incentives responsible for the slow down in the memory chip capacities

Trends in Memory Cell Area
From [Itoh01]

Semiconductor Memory Trends
Technology feature size for different SRAM generations

Digital Integrated Circuits A Design Perspective

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