1. Design and Implementation of VLSI Systems (EN1600) lecture05 Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison Wesley]

2. Summary of Terminology body diffusion (n/p) source drain well tap contact metal track via polysilicon gate length/width gate oxide channel  All these structures must obey the dimensions and separation rules dictated by the process fabrication facility

3. Process design rules Design rules change from fab to fab Fab examples: IBM, Intel, TI, TSMC, UMC, MOSIS Design rules change according to the process technology

4. Lambda rules Feature Size: minimum distance between source and drain of transistor Feature size = 2λ (@ 90nm feature size λ=45) According to Moore’s Law, how much does the feature size scale by every ~2 years?

5. Design rules and gate layout Lambda rules are conservative

6. More design rules

7. More and more design rules

8. Inverters with taps

9. Layout of a 3-input NAND gate

10. Stick diagrams No need to be drawn to scale

11. Pitch of routing tracks

12. Gate area estimation