1. GlastDigi in Gleam (LAT-TD 1058) GlastDigi in Gleam (LAT-TD 1058) SW BARI group Udine, january 30, 2003

2. GlastDigi in Gleam Glast Digi v5r2p3 LAT-TD 1058 Output: ROOT GlastDigi in Gleam Glast Digi v5r2p3 LAT-TD 1058 Output: ROOT (digit.root) LAT-TD 1058 LAT-TD 1058

3. GlastDigi in Gleam in GLEAM cmt/requirements #digitization use CalDigi v1r2p11 #use TkrDigi v1r7p1 use AcdDigi v1r6 use GlastDigi v4r5p2 in GLEAM src/basicOptions.txt // Digitization ApplicationMgr.DLLs +={ "TkrDigi", "CalDigi", "AcdDigi" }; Digitization.Members = { "TkrSimpleDigiAlg", "CalDigiAlg,"AcdDigiAlg"}; GlastDigi TkrBariDigiAlg

4. The GlastDigi package INPUT: Input and exit point Energy loss PARAMETRIZATION: Clusters generation CLUSTER PROPAGATION: e-h motion Induced current signal ELECTRONICS (Newton): NOISE Voltage signal evaluation OUTPUT: Fired strips list, per layer TOT per layer

5. TKRDigitizer PropagatorNewtonToT AddNoise Preamp Shaper Cluster CurrentMap ToTOr TKRDigiAlg TkrDigitCol The GlastDigi algorithm

6. Charge sharing: muons 2 GeV Charge sharing: muons 2 GeV

7. Charge sharing: e + 5 GeV Elettrone 5GeV Perpendicolare al piano del wafer

8. Charge sharing: e + 5 GeV Elettrone 5 GeV traccia inclinata di 60 o

9. Mean strip multiplicity per layer Mean strip multiplicity per layer Tracks normal to wafer surface

10. Mean strip multiplicity per layer Mean strip multiplicity per layer Tracce inclinate di 5 0

11. Mean strip multiplicity per layer Mean strip multiplicity per layer Tracks normal to wafer surface 5 GeV electrons

12. Mean strip multiplicity per layer Mean strip multiplicity per layer Tracks normal to wafer surface

13. Mean strip multiplicity per layer Mean strip multiplicity per layer Tracks normal to wafer surface

14. TKR LAT electronics read-out (2 controller chips)

15. TKR signal read-out TKR signal read-out Time-over-Threshold (ToT = T 2 –T 1 ) Read-out:ToT-OR per layer Output: list of fired strips per layer and ToT per layer T1 T2 ToT Fast-Or channel/layer

16. ToT vs deposited charge ToT vs deposited charge Newton- PSpice m.i.p. in 400 μm of Si 150 keV N e-h 10 4 e-h Q dep 5-6 fC

17. ToT distributions ToT distributions Muons 2GeV - pp Electrons 5GeV - pp ToT 200 ns step

18. ToT vs layers ToT vs layers ToT 200 ns step

19. Conclusions Current signal simulation in SSD Application to GLAST TKR study of TKR behaviour Digit output ToT signal read-out Applications …. Timing study (F. L. talk) ……………………