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Optoelectronics & Microsystems Lab Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab STAFF COVA, S. Full Professor GHIONI, M. Full Professor ZAPPA, F. Associate Professor GIUDICE, A. Post-Doc Research Associate RECH, I. Post-Doc Research Associate LABANCA, I. Research Associate GALLIVANONI, A.Research Associate TISA, S.Ph.D. Student RESTELLI, A. Ph.D. Student TOSI, A.Ph.D. Student GULINATTI, A. Ph.D. Student
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Core Know-How Microelectronic Detectors and Circuits Measurement Techniques and Instrumentation for detecting and measuring optical signals with ultra-high sensitivity and picosecond resolution
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Bias: well ABOVE breakdown Geiger-mode: its a TRIGGER device!! Gain: meaningless... or infinite !! Bias: slightly BELOW breakdown Linear-mode: its an AMPLIFIER Gain: limited < 1000 A valanche P hoto D iode S ingle- P hoton A valanche D iode APD SPAD
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Thin Si SPAD Thick Si SPAD Planar structure typical active region: 20 m diameter 1 m thick Reach-Trough structure typical active region: 200 m diameter 30 m thick
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Thin Si SPADs Thick Si SPADs Good QE and low noise Picosecond timing Low voltage : 15 to 40V Low power : cooling not necessary Standard Si substrate Planar fabrication process COMPATIBLE with array detector and ICs (integrated circuits) Robust and rugged Low-cost NO COMMERCIAL SOURCE TODAY Very good QE and low noise Sub-nanosecond timing High voltage : 300 to 400V High dissipation : Peltier cooler required Ultra-pure high-resistivity Si substrate Dedicated fabrication process NOT COMPATIBLE with array detector and ICs Delicate and degradable Very expensive SINGLE COMMERCIAL SOURCE
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Passive quenching is simple... Current Pulses Diode Voltage … but suffers from long, not well defined deadtime low max counting rate < 100kc/s photon timing spread et al
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Activequenching…. Active quenching…....provides: short, well-defined deadtime high counting rate > 1 Mc/s good photon timing standard logic output Output Pulses P.Antognetti, S.Cova, A.Longoni IEEE Ispra Nucl.El.Symp. (1975) Euratom Publ. EUR 537e
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Earlier modules in the 80s Compact modules in the 90s Integrated AQC today AQC evolution
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab iAQC - Integrated Active Quenching Circuit F.Zappa, S.Cova, M.Ghioni, Monolithic circuit of active quenching and active reset for avalanche photodiodes, US Patent 6,541,752 B2, date April 1,2003 (priority date March 9, 2000); European patent application n. 01200852.2-2217, fil. March 6, 2001. F. Zappa, A. Lotito, A. C. Giudice, S. Cova, and M. Ghioni, IEEE J. Solid-State Circuits, 38, 1298-1301 (2003). Input sensing and quenching stage
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab iAQC - Integrated Active Quenching Circuit CMOS design +V HIGH +5V IN GATE GND WIDTH OUT
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab iAQC - Integrated Active Quenching Circuit Practical advantages Miniaturization mini-module detectors Low-Power Consumption portable modules Ruggedness and Reliability Plus improved performance Reduced Capacitance Improved Photon Timing Reduced Avalanche charge Reduced Afterpulsing Reduced Photoemission reduced crosstalk in arrays
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab QE comparison
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S. Cova et al., 2004 POLIMI - Politecnico di Milano, DEI Optoelectronics & Microsystems Lab Photon Timing comparison Planar thin Si-SPAD PerkinElmer SPCM (SLIK TM diode)
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