1. Development of monolithic pixel sensors in Silicon On Insulator technology Serena Mattiazzo University of Padova (Italy) D. Bisello, P. Giubilato, D. Pantano INFN & University of Padova (Italy) M. Battaglia, UC Santa Cruz (USA) P. Denes, D. Contarato Lawrence Berkeley National Laboratory, LBNL (USA)

2. Serena Mattiazzo TREDI2013, 19/02/2013 Outline 2 Review of Monolithic pixel sensors in Silicon On Insulator technology - The SOIPIX collaboration - SOI pixel detectors from LAPIS Recent results on the latest chip produced - Thinning and back-processing - Test on thin detector with soft X-rays - Test on thin detector with MIPs Conclusions

3. Serena Mattiazzo TREDI2013, 19/02/2013 Monolithic Pixel Sensors in SOI technology In the Silicon On Insulator (SOI) technology, the CMOS electronics is implanted on a thin silicon layer on top of a buried oxide (BOX)  Bonded SOI wafers provided by SOITEC Co with high resistivity “handle wafer”  LAPIS Semiconductor (former OKI, Japan) provides a commercial 0.20µm Fully Depleted (FD) SOI process  Bonded SOI wafers provided by SOITEC Co with high resistivity “handle wafer”  LAPIS Semiconductor (former OKI, Japan) provides a commercial 0.20µm Fully Depleted (FD) SOI process 200nm thick BOX 350  m thick high resistivity substrate 200nm Al back-contact 40nm thin CMOS layer In the SOI technology depleted monolithic pixel sensors can be built by using a high resistivity substrate and providing some vias to interconnect the substrate through the BOX; Pixel implants can be created and a reverse bias can be applied; charge is collected by drift. 3

4. Serena Mattiazzo TREDI2013, 19/02/2013 4 SOIPIX collaboration KEK KEK JAXA RIKEN AIST Osaka University Tohoku University Tsukuba University Kyoto University IHEP/IMECAS (China) Japan INP Krakow University of Heidelberg Louvain-la-Neuve University Padova University & INFN University of Hawaii Fermi National Accelerator Laboratory Lawrence Berkeley National Laboratory UC Santa Cruz  Collaboration formed in 2005 by KEK Universities (Prof. Y. Arai representative)  Regular Multi-Project Wafer (MPW) runs  twice per year http://rd.kek.jp/project/soi/

5. Serena Mattiazzo TREDI2013, 19/02/2013 5 SOI pixel technology Low material budget High density Low cost Monolithic approach Low power High speed Low SEL sensitivity SOI technology Limited depletion voltage Limited depletion width Backgate effect CZ(n)  400  -cm Handle wafer resistivity low after CMOS process  21 mm × 21 mm mask size Small sensor chip size

6. Serena Mattiazzo TREDI2013, 19/02/2013 6 Backgate effect The high field in the depleted substrate causes back-gating of the CMOS electronics on top of the BOX: the reverse bias, V back, applied to the silicon substrate increases the potential at the surface, so that the buried oxide acts as a second gate for the CMOS circuitry on top Test of single transistors vs. depletion voltage: shift in the threshold voltage with increasing substrate voltage Buried P-Well (BPW) Implantation BPW Pixel Peripheral low dose implantation through the BOX and through the electronics Suppress the back gate effect. Less electric field in the BOX which may improve radiation hardness. BOX

7. Serena Mattiazzo TREDI2013, 19/02/2013 7 High Resistivity Substrates [Y.Arai’s talk at PIXEL2012 Workshop] CZ(n) -  700  -cm - 260 µm FZ(n) -  7 k  -cm - 500 µm FZ(p) -  25 k  -cm - 500 µm

8. Serena Mattiazzo TREDI2013, 19/02/2013 8 Larger masks and stitching 31 mm 24.8 mm Previously 20.8mm × 20.8mm Easier to make larger sensors and to reduce the cost per area Larger reticule size Special run for RIKEN in 2012 Stitching

9. Serena Mattiazzo TREDI2013, 19/02/2013 9 SOI pixel technology: recent progresses Buried P-Well proposed by KEK and now routinely used Limited Backgate effect FZ(n) > 3 k  -cm Higher Handle wafer resistivity  30 mm × 66 mm Larger sensors

10. Serena Mattiazzo TREDI2013, 19/02/2013 10 Applications Synchrotron light XFEL X-ray astronomy Medical imaging … X-ray photons Belle II ILC CLIC Electron microscopy … Ionizing particles

11. Serena Mattiazzo TREDI2013, 19/02/2013 A brief history of SOI pixel prototypes Within an international collaboration between the Lawrence Berkeley Laboratory, UC Santa Cruz, the University of Padova and the INFN of Padova, we are developing depleted monolithic pixel sensors in Silicon On Insulator technology  LDRD-SOI series: technology demonstration with high momentum particles on analog and digital pixels. Limited reverse bias applied (back-gating effect)  SOImager series: optimization of pixel layout, test of different substrates  NIM A 583 (2007) 526  NIM A 604 (2009) 380  JINST 4 P04007 (2009) 11

12. Serena Mattiazzo TREDI2013, 19/02/2013 2009-2012: SOI-Imager series Row Selection Source Follower Reset Transistor Optimization of the pixel layout, more effective solution against back-gating, larger area Pixel cell layout SOImager-2 LAPIS 0.20 µm FD-SOI process 5  5 mm 2 (active area is 3.5  3.5mm 2 ) 256  256 analog 3T pixels, 13.75 µm pitch, 1.8 V operational voltage 4 parallel analog outputs (64  256 pixels each) read out up to 25 MHz, 655 µs integration time (serial readout architecture) 12

13. Serena Mattiazzo TREDI2013, 19/02/2013 SOImager-2: pixel layout study Pixel layouts for the 8 sectors SOImager-2 Buried P-Well (BPW) BPW PixelPeripheral  NIM A 650 (2011) 184  NIM A 654 (2011) 258  NIMA 658 (2011) 125 13 Guard-rings

14. Serena Mattiazzo TREDI2013, 19/02/2013 14 Photon detection 9um < 10  m Cross section view of an SOI device In our technology the total thickness of the top passivation, metalizations and the CMOS and the buried oxide layers is  9  m This is a “dead region”: all photons converting here are lost! Absorption length (  ) in Silicon In order to avoid photon absorption in non- sensitive regions of the device in the soft-X- rays and UV energy range, back-illumination is required But this requires a fully depleted device!

15. Serena Mattiazzo TREDI2013, 19/02/2013 Thinning and back-processing Breakdown at 130V (no full depletion) and need to minimize material budget for precision vertex tracking A set of sensors has been back-thinned to 70  m using a commercial grinding technique The backplane is damaged after the thinning process Need good contact to extend electric field to detector back-plane Low energy Phosphor implantation followed by annealing at 500°C (windows thickness of  100-200nm) 15

16. Serena Mattiazzo TREDI2013, 19/02/2013 X-rays characterization at the ALS Vacuum test chamber DAQ Reference spectrometer Detector backplane Sample holder with thin metal foils Quantum efficiency for X-rays on the SOImager-2 studied on data collected at the 5.3.1 beamline of the Advanced Light Source at LBNL In-vacuum test capabilities, reference spectrometer and translation stages for sample and sensor positioning Thin, back-processed SOI-Imager-2 sensor tested with fluorescence X-rays from metal foils in the energy range 2.1 keV< E < 8.6 keV ElementE (keV) (  m) Au2.121.7 Ag2.984.1 Ti4.5013 Fe6.4037 Ni7.4756 Cu8.0870 Zn8.6086 16

17. Serena Mattiazzo TREDI2013, 19/02/2013 Results Quantum efficiency (continuous black line) measured by comparing hit rates on SOI sensor with reference spectrometer accounting for absorption in Si (dotted line) and transmission through thin entrance window (dashed line). Sensor operated in full depletion and over- depletion Good pulse height linearity as a function of X- ray energy Calibration and linearity Quantum efficiency  NIM A 674 (2012) 51 17

18. Serena Mattiazzo TREDI2013, 19/02/2013 Test on the thin SOImager-2 300 GeV  - at CERN SPS Detectors arranged in one cemented “doublet” (2 thick detectors, 9 mm spaced) and one “singlet” (1 thin detector, 33 mm spaced). The doublet is optically aligned with a better than 50 µm precision  easy and precise coincidence cuts in cluster recognition. Temperature is maintained around 20° C by cool air flow and continuously monitored. beam 18

19. Serena Mattiazzo TREDI2013, 19/02/2013 MIP detection: thick vs thin sensor SOI sensorV sub (V)Cluster Efficiency  point (  m) Thin30 50 70 90 25.0 28.2 28.8 31.2 0.90 ± 0.04 0.94 ± 0.03 0.96 ± 0.03 0.98 ± 0.02 3.1 ± 0.80 1.7 ± 0.50 1.8 ± 0.60 1.9 ± 0.70 Thick30 50 70 23.3 47.4 52.7 0.89 ± 0.031.36 ± 0.04 1.12 ± 0.03 1.07 ± 0.05 300GeV  - 70  m SOImager-2 V sub = 50V 300GeV  - 260  m SOImager-2 V sub = 50V MPV: (191 ± 2) ADC cnt MPV: (314 ± 3) ADC cnt Ratio of Pulse height: 0.61 ± 0.01 Ratio of estimated sensitive thicknesses: 0.62 ± 0.05 Perfect agreement Over depletion NIM A 676 (2012) 50 NIM A 681 (2012) 61 19

20. Serena Mattiazzo TREDI2013, 19/02/2013 Summary & Outlook 20 The SOIPIX collaboration is very active in the development of monolithic pixels in SOI technology; the process is improving and the collaboration is growing in size LBNL, Padova and UC Santa Cruz are involved in SOI monolithic pixels R&D in LAPIS deep-submicron FD-SOI technology since about 2007 (with more than 7 prototypes). We have developed thin sensors with very good performance both for X-ray imaging and for MIP tracking

21. Serena Mattiazzo TREDI2013, 19/02/2013 Backup Slides 21

22. Serena Mattiazzo TREDI2013, 19/02/2013 New test chips on High Resistivity substrates V sub RST-n RST-p V RST V DD SF-n SF-p RS OUT-n OUT-p V RST = 0 for n-type substrate V RST = V DD for p-type substrate 0.20 µm LAPIS process, Oct 2011 submission 512 × 320 analog pixels, 13.75 µm pitch Complementary architecture for both p-type and n-type substrates Devices on CZ substrate (HR1, n-type) and FZ-p arrived in June (evaluation ongoing). HR3 (n-type) and FZ-n to arrive soon! 22

23. Serena Mattiazzo TREDI2013, 19/02/2013 Energy resolution V d = 70V Fitted Gaussian width (0.70 ± 0.03) keV Fitted Gaussian width (0.99 ± 0.02) keV 23

24. Serena Mattiazzo TREDI2013, 19/02/2013 Pixel multiplicity Pixel multiplicity in signal clusters as a function of V dep for 980nm laser pulses (filled squares) and 5.9keV X-rays (open triangles). Cluster size decreases with V dep as expected Signal is distributed among multiple pixels also for large voltages: capacitive coupling? 24

25. Serena Mattiazzo TREDI2013, 19/02/2013 25 Response to inclined tracks Average pixel multiplicity along rows and columns for clusters associated to a pion track as a function of the detector angle for V d = V.

26. Serena Mattiazzo TREDI2013, 19/02/2013 Charge sharing  distribution at different values of V d for (left) 980nm laser pulses and (right) 200GeV . Small variation of the  distribution with V d using the980nm laser and no significant variation with energetic pions. Charge sharing among neighboring pixels is not dominated by the charge carrier cloud size: instead, the pixel capacitive coupling plays a significant role in determining the observed signal distribution 26

27. Serena Mattiazzo TREDI2013, 19/02/2013 Depletion thickness 27

28. Serena Mattiazzo TREDI2013, 19/02/2013 Radiation damage studies on the 0.20 µm process X-ray irradiation (10 keV L-line photons.) on single transistors 0.20 µm FD process). Irradiations in air at room temperature. Dose rate: 165 rad(SiO 2 )/sec. NMOS and PMOS transistors, each surrounded by 1µm PSUB guard ring NMOS and PMOS Body of Body-Tie transistors at 0V. Drain and source at 0V, gate NMOS HIGH (1.8V), gate PMOS LOW (0V). V back = 0V, 5V, 10V with PSUB guard-ring floating; V back = 10V with PSUB guard-ring at 0V The PSUB guard-ring tied at GND during irradiation indeed limits the electrical field through the BOX and improves the radiation hardness of the device. For V back = 0V the transistor is still working properly up to doses of ~100krad. 28

29. Serena Mattiazzo TREDI2013, 19/02/2013 29 Double-SOI SEM View of Double SOI (Thickness of Si & SiO2 layer not yet optimized Y. Arai talk at PIXEL2012 (September 2012, Inawashiro) Shield transistor from bottom electric field Compensate electric field generated by the trapped hole in the BOX Reduce crosstalk between sensors and circuits

30. Serena Mattiazzo TREDI2013, 19/02/2013 30 LAPIS Semiconductor 0.2um FD-SOI Pixel Process

31. Serena Mattiazzo TREDI2013, 19/02/2013 31 Larger mask 31 mm 24.8 mm New Mask 20.8 mm × 20.8 mm Unit size 5 mm  6 mm Previous Mask Y. Arai talk at PIXEL2012 (September 2012, Inawashiro)

32. Serena Mattiazzo TREDI2013, 19/02/2013 32 Stitching 66 mm × 30 mm achieved 130mm × 130mm is possible Y. Arai talk at PIXEL2012 (September 2012, Inawashiro)

33. Serena Mattiazzo TREDI2013, 19/02/2013 R&D on back-processing Need 100 Å window thickness for an efficient O(100eV) X-ray sensitivity in back-illumination Several processes under test at LBNL ProcessWindow ThicknessStatus Low energy implantation + 500°C annealing 1000-2000 ÅProcess dependent, several SOI prototypes functional Low energy implantation + laser annealing 400-700 ÅSeveral SOI prototypes functional a-Si (amorphous silicon) contact deposition by sputtering 300ÅPrototypes functional after processing, high leakage Molecular Beam Epitaxy50-75 ÅBuilding in-house capability 33

34. Serena Mattiazzo TREDI2013, 19/02/2013 Back-processing: LBNL low-temperature process Distance from back-plane (µm) SRA data for the implanted contact on a post-processed chip Expect detection threshold of 1.5 keV for 0.4 µm thick contact Low temperature process developed at LBNL: phosphorus implant at 33keV using a cold process at -160°C to create amorphous layer, followed by annealing @ 500°C (10 minutes in Nitrogen atmosphere), compatible with CMOS devices; simple process and equipment needed Very promising results from tests on PIN diodes: good yield and low leakage current Process applied to 70 µm thin SOImager-2 chips, which are fully functional after processing Spreading Resistance Analysis (SRA) measurements show P contact extending to 0.3 – 0.4 μm depth [from Craig Tindall, LBNL] 34

35. Serena Mattiazzo TREDI2013, 19/02/2013 MBE Molecular Beam Epitaxy (MBE) system being acquired, expected to be operational by mid- 2013 Conductive implants few atomic layers thin created by evaporation in ultra-high vacuum (“delta doping” approach first demonstrated by NASA/JPL); final contact thickness ~ 10nm Low thermal budget (< 450°C) technique, applicable to full-processed devices 35

36. Serena Mattiazzo TREDI2013, 19/02/2013 HEP requirement for radiation hardness Machine Luminosity [cm -2 s -1 ] Non Ionizing Fluence [n eq cm -2 yr -1 ] Ionizing Fluence [krad yr -1 ] LHC10 34 1.4 × 10 14 11300 HL-LHC10 35 1.4 × 10 15 71400 CLIC10 34 1.0 × 10 11 50 Super B> 10 36 3.5 × 10 12 3000 36

37. Serena Mattiazzo TREDI2013, 19/02/2013 Lorentz angle  In the presence of an electric field (E) and a magnetic field (B), the charge carriers released by a charged particles in the detector drift along a direction at an angle  L (Lorentz angle) with respect to the electric field direction The charge usually spreads over several pixels, depending on the angle of the incident particle The spread is minimum for an incident angle equal to the Lorentz angle Knowledge of this angle is needed to optimize the spatial resolution by tuning the angular orientation of the detectors 37

38. Serena Mattiazzo TREDI2013, 19/02/2013 Lorentz angle measurement B = 0 TB = 1.5 T V sub = 70V0.14 ± 0.141.71 ± 0.11 Measurement on a thick detector at V sub = 70V Measurement repeated at the end of July on a thin detector, but data analysis still ongoing B = 1.5T B = 0 T 38

39. Serena Mattiazzo TREDI2013, 19/02/2013 Single Event Upset tests We tested the technology for SEU sensitivity. The periphery shift register for row-selection has been used to check for bit-flip through a dedicated test pad. Mind: the design is not hardened in any special way against SEU Mind: the design is not hardened in any special way against SEU! 256 flip flops, 13.75 µm pitch FLIP-FLOP layout 39

40. Serena Mattiazzo TREDI2013, 19/02/2013 SEU cross section LET thr  4 MeV·cm 2 /mg  sat  10 -6 cm 2 No apparent difference with or without bias A Single Event Upset (SEU) study was performed at the SIRAD irradiation facility, located at the 15MV Tandem XTU-Accelerator of the INFN Legnaro National Laboratory. A known logical pattern is written in and read back from the row selection shift register through dedicated pads during irradiation. Differences between the loaded and read-back pattern highlight a SEU occurred in the cells Irradiation performed with three different ion species and, for each ion beam, for two substrate bias conditions (V back = 0V - 7V). V back = 7 V V back = 0 V 40

41. Serena Mattiazzo TREDI2013, 19/02/2013 Other applications: FemtoPix 41