1. iSIGHT Applications in Electronics Industry

2. iSIGHT Customers in Electronics
Advanced Institute of
　　Technology and Science(J)
Aisin
Black & Decker
Canon
Delphi Packard Electric
Denso
Emerson Motor
Fuji XEROX
Fujitsu
General Electric
Hitachi
Kyocera
Matsushita/Panasonic
Mitsubishi Electric
Motorola
NEC
Ricoh
Samsung
Sanyo
Sharp
Sony
Toshiba
XEROX
etc.

3. Applications in Electronics Industry
Heat Exchange Unit Optimization
Halogen-IR Lamp Design Space
Power Converter Weight Reduction
3D Coil and Magnetic Field for controlling Deflection Yoke of CRT
3D Coil and Magnetic Field for controlling Electron Beam Orbit of Flat TV
Rubber Switch Optimization
Latch Bracket Shape Optimization Plastic Injection Molding Optimization
Plastic Injection - Structure Analysis MDO
Semiconductor Circuit Design Optimization
LCD Circuit Design Optimization
Robust Design for coating materials of semiconductor
ECU Design & Controlling Optimization
Refrigerator Internal Flow for minimizing Electric Power Consumption
Air Conditioning System Optimization
Vacuum Cleaner Intake Mechanism for maximum Inhalation with minimum Electric Power Consumption
No Exhaust Vacuum Cleaner
Laundry Machine Structure for minimizing Vibration and Noise
IH Rice Cooker Magnetic Field Optimization

4. Automation & Integration of EDA Process in Semiconductor Design
Simulation
Shape
Simulation
Functionality
Simulation
Mask
Layout
Logic
Synthesis
Device
Simulation
Latency Information
Logic
Simulation
IC Test
Parameter of
Device Characteristics
Failure
Information
Circuit
Simulation
Failure
Simulation
Failure
Analysis
Failure
Dictionary
Mask Layout
& Testing
Device Design
IC Design

5. Automation & Integration of EDA Process in System Design
Automation/Integration/Optimization
Analog
Simulation
Digital
Simulation
Prototype
Test
Software
Design
PCB Positioning
& Wiring
Physical System
Test
Failure
Information
Reliability
Testing
I/O Design
Failure
Analysis
PCB Design
System Design & Testing

6. Hitachi Semiconductor Group：
　　　Robust Design of MOS Devices：DOE based TCAD Simulation
Objective
Yield Improvement Time Reduction of New Devices
TCAD
Calibration
Requiring Robust Design of MOS
Prototyping
Robust Design
Issues
Requiring Multi Variables Optimization
Error Factor Compounding
DOE Process
Calibration of Device Simulator
Robust Design of MOS Devices
Parametric Optimization
Design Environment of MOS Devices
Design Improvement
Threshold Voltage (Vth) Deviation
>
SN Ratio Improvement:
25.7db --> 34.6db
0.03
Design Cycle Reduction
3 Month (Traditional Method)
--> 3 Weeks (Manual DOE/Taguchi Method)
--> 3 Days (Automated DOE and Optimization by iSIGHT)

7. MOS Device Concept（NMOS ） Process Device Simulation
Hitachi Semiconductor Group：
Robust Design of MOS Devices：DOE based TCAD Simulation
Gate
Electrode ○
Drain
Electrode
Source
Electrode ○ ○ N N Id P
Si Board
MOS Device Concept（NMOS ）
Model Parameter
Model Parameter
（Process）
（Device）
Impurities
Distribution
Device
Simulation
Device
Characteristics
Process
Simulation
Process Flow
　Process Device Simulation

8. SAIT (Samsung Advanced Institute & Technology)
■ MEMS Switching Device Design
Problem Definition
4 D.V.s for the membrane geometry
Must consider unwanted effects in manufacturing process
Minimize the actuation voltage of switch and maximize the recovery force
Highly non-linear property in relation between voltage and gap
Switch On
Switch Off

9. SAIT (Samsung Advanced Institute & Technology)
■ Process to Design
Maintask
Input 4 geometric design variables to Ansys for modeling
This model is provided for analysis of actuation voltage
Subtask
From the geometry model and unwanted effects data, Abaqus and in-house codes calculate the gap based on the voltage input and check the membrane is contacted or not.
Due to the long running of Abaqus
the actuation voltage must be found under 10 iterations in subtask by applying an optimization algorithm in a program.
Traditional gradient based optimization algorithms do not work because it’s very highly non-linear.

10. SAIT (Samsung Advanced Institute & Technology)
■ Simulation of problem
Made simple simulation model of the actuation voltage problem by using Excel Interface
Hooke-Jeeves algorithm is good for this problem

11. SAIT (Samsung Advanced Institute & Technology)
■ RSM Model
Built RSM model by applying DOE in main task and finding the actuation voltage in subtask
Tried to find minimized value
Tried to analyze uncertainties in manufacturing process by applying MCS for the minima