1. 463 573 614 530 Ultra-efficient RYGB SSL CRI = 90 CCT = 3,000K Δλ = 1 nm LER = 408 lm/W

2. 400 500 600 700 Wavelength (nm) Relative Power 1.5 1.0 0.5 0 Reflectance Factor 0.6 0.4 0.2 0 8 1 7 2 6 3 5 4 463 nm 530 nm614 nm 573 nm (a) (b)

3. 400 500 600 700 Wavelength (nm) 0 20 40 60 80 100 Color Rendering Index Luminous Efficacy of Radiation (lm/W) 500 400 300 (a)(b) 408 lm/W

4. Linewidth (nm) 150 100 50 0 Wavelength (nm) 700 600 500 400 Luminous Efficacy (lm/W) 400 0 200 600 620 640 660 680 Wavelength (nm) 600 620 640 660 680 Wavelength (nm) 600 620 640 660 680 Wavelength (nm) RYGB RG B B RBGBBRBGBB 408 286 204 lm/W 100% 90% 80% 70% 100% 90% 80% 70% 100% 90% 80% 70%

6. Schwarz 2007

9. As-grown thin AlGaInPepi Transparent substrate with chip shaping Red LEDs (AlGaInP) Blue LEDs (InGaN) Poor light extraction Advanced light extraction GaAs GaP C ext ~ 4% C ext ~ 61% C ext ~ 30% C ext ~ 80% AlGaInP Al 2 O 3 n - GaN p - Top-emitting LED Thin-film flip-chip LED with texturing n - GaN p- n - surface texture reflective n-contact reflective p-contact transparent p-contact transparent GaPlayers Absorbing GaAs substrate As-grown thin AlGaInPepi Transparent substrate with chip shaping Red LEDs (AlGaInP) Blue LEDs (InGaN) Early designs with inefficient light extraction Advanced designs with efficient light extraction GaAs GaP C ext ~ 4% C ext ~ 61% C ext ~ 30% C ext ~ 80% AlGaInP Al 2 O 3 n - GaN p - Al 2 O 3 n - GaN p - Top-emitting LED Thin-film flip-chip LED with texturing n - GaN p- n - surface texture reflective n-contact reflective p-contact transparent p-contact transparent GaPlayers Absorbing GaAs substrate

10. Year 19901995200020052010 Extraction Efficiency (%) 0 20 40 60 80 100 Thin AS Thick AS Thick AS + DBR Thick TS Improved TS Shaped TS Thick RS CC FC(Al) CC(PS) FC(Ag) VTF CC(PS/ITO) high power CC(PS/ITO) low power TFFC Evolution of Light Extraction in Visible LEDs