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Published byLorin Eaton Modified over 9 years ago
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CMOS RFIC Noise Canceling Method 2009314086 An Yong-jun
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Contents Noise Cancelling in Wideband CMOS LNAs F. Bruccoleri, E.A.M. Klumperink, B. Nauta. In 2002, ISSCC
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Paper Study Flow Noise Cancelling in Wideband CMOS LNAs F. Bruccoleri, E.A.M. Klumperink, B. Nauta. In 2002, ISSCC Today Same Circuit
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Noise Cancelling in Wideband CMOS LNAs Shunt Feedback For input matching Z in = R s NF>3dB NF always lager than 3dB Input noise current (A CL -1)times smaller than the others
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Noise Cancelling in Wideband CMOS LNAs Noise Canceling from MOSFET (Not source) Determine ‘A’
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling SameOpposite
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Overall Gain :
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Source Follower Vout = V Yout +V Xout V Yout = V Y V Xout = V X * g m2 / g m3 Noise cancelled which is generated by this FET
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling EF : (noise)Excess Factor Higher g m2 R s Lower F Less than 1
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Noise cancelled point!
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling
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►Robustness
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling ►Distortion canceling Distortion comes from this FET Distortion canceled like Thermal noise
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling ►High Freq. Limit. Approximately C Y =C L =0 1)C Y and the load C L don’t affect the cancellation 2)C L doesn’t affect the F of the LNA standalone Source Impedance looks like
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling @ High Freq, Noise cancelling is degraded
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling But f 0 is higher, - high f T - Minimizing C IN - reduce Miller effect degrades frequency factor
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Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling
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►Conclusion simultaneous cancellation of noise and distortion terms due to the matching device; simultaneous noise and power matching for frequencies where the effect of parasitic capacitors can be neglected; orthogonality of design parameters for input impedance and gain, allowing for an easier implementation of variable gain while maintaining input impedance matching; robustness to variations in device parameters and the external source resistance ; applicability in other IC technologies and amplifier topologies.
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