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CMOS RFIC Noise Canceling Method 2009314086 An Yong-jun.

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Presentation on theme: "CMOS RFIC Noise Canceling Method 2009314086 An Yong-jun."— Presentation transcript:

1 CMOS RFIC Noise Canceling Method 2009314086 An Yong-jun

2 Contents Noise Cancelling in Wideband CMOS LNAs F. Bruccoleri, E.A.M. Klumperink, B. Nauta. In 2002, ISSCC

3 Paper Study Flow Noise Cancelling in Wideband CMOS LNAs F. Bruccoleri, E.A.M. Klumperink, B. Nauta. In 2002, ISSCC Today Same Circuit

4 Noise Cancelling in Wideband CMOS LNAs Shunt Feedback For input matching Z in = R s  NF>3dB NF always lager than 3dB Input noise current (A CL -1)times smaller than the others

5 Noise Cancelling in Wideband CMOS LNAs Noise Canceling from MOSFET (Not source)  Determine ‘A’

6 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling SameOpposite

7 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Overall Gain :

8 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Source Follower Vout = V Yout +V Xout V Yout = V Y V Xout = V X * g m2 / g m3 Noise cancelled which is generated by this FET

9 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling EF : (noise)Excess Factor Higher g m2 R s  Lower F Less than 1

10 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling Noise cancelled point!

11 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling

12 ►Robustness

13 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling ►Distortion canceling Distortion comes from this FET Distortion canceled like Thermal noise

14 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling ►High Freq. Limit. Approximately C Y =C L =0 1)C Y and the load C L don’t affect the cancellation 2)C L doesn’t affect the F of the LNA standalone Source Impedance looks like

15 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling @ High Freq, Noise cancelling is degraded

16 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling But f 0 is higher, - high f T - Minimizing C IN - reduce Miller effect degrades frequency factor

17 Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling

18 ►Conclusion simultaneous cancellation of noise and distortion terms due to the matching device; simultaneous noise and power matching for frequencies where the effect of parasitic capacitors can be neglected; orthogonality of design parameters for input impedance and gain, allowing for an easier implementation of variable gain while maintaining input impedance matching; robustness to variations in device parameters and the external source resistance ; applicability in other IC technologies and amplifier topologies.


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