1. Workshop for NFF Nanoimprint System NFF MA6 Nanoimprint Upgrade

2. Outline  Nanoimprint Lithography (NIL)  Upgrade Parts Workshop for NFF Nanoimprint System

3. Nanoimprint Lithography (NIL)   Versatile, cost effective, flexible and high throughput (parallel) method for fabrication of down to 10 nm structures even over large areas (wafers) Applications in: Semiconductor memory Micro and nano fluidics Optical devices e.g. LEDs and lasers Life science, e.g. lab-on-a-chip systems, bio sensors Radio frequency components Renewable energy Security (holography, tags, etc.) Nanotechnology Workshop for NFF Nanoimprint System

4. Residual imprint polymer under stamp protrusion removed by ‘descum’ process Imprinted pattern transferred into substrate by dry etching Nanoimprint process The stamp is pressed into a soft thermoplastic, thermosetting or UV-curable polymer on a substrate combined with heating or UV radiation A stamp is fabricated by electron beam lithography (EBL) and dry etching Stamp Substrate Polymer The polymer is cured and the stamp release from substrate Workshop for NFF Nanoimprint System

5. Upgrade Parts Include  Stamp  Stamp Holder  Substrate Holder  Stamping control Workshop for NFF Nanoimprint System

6. Stamp Bare Quartz Plate Patterned Stamp Bare Quartz Plate Patterned Stamp Workshop for NFF Nanoimprint System

7. Stamp Holder Workshop for NFF Nanoimprint System

8. Substrate Holder Workshop for NFF Nanoimprint System

9. Stamping Control With Firmware upgrade Workshop for NFF Nanoimprint System

10. Stamp  Stamp Plate Dimension  Stamp Pattern  Anti- sticking Layer  Stamp Handling Workshop for NFF Nanoimprint System

11. Stamp Plate Dimension   Square Quartz Plate   65mm x 65mm x 6.35 mm thick   A Square Shape Mesa ~ 25 um height at the center   Probably 3 E-beam Alignment marks will be set nearly at the corners (will further discuss) Workshop for NFF Nanoimprint System

12. Stamp Pattern   All pattern should be inside the Mesa area   Standard Mesa size in NFF: 10 mm square   Mesa can change to another size but it will take longer time to fabricate, more chance to jammed with the substrate and extra charge for new mesa mask   Large patterned area also cause flatness problem of stamp   To avoid drawing at boundary or a large enclosed pattern, especially near at the edges of Mesa. Because it will block the excess imprint resist flow Workshop for NFF Nanoimprint System

13.   Beware of the imprint resist thickness to the depth of stamp pattern Unit cell dot L S (V to fill ) of resist needed to fill completely this structure. For our design, V to fill = H m {LS + (L + S)S}, where H m is the mould’s depth, L the dot’s size and S the spacing between each dot. Now the available volume of resist for this unit cell is V resist = H i (L + S) 2, where H i is the initial resist layer thickness. Nanotechnology 17 (2006) 2701–2709S Landis et al Workshop for NFF Nanoimprint System

14. Anti-sticking Layer  The Mesa is covered by an Anti-sticking layer  Anti-sticking layer is a very thin Fluorocarbon layer  Anti-sticking layer (>10 nm) for easy stamp release from a thin imprint resist  Don’t scratch the Anti-sticking layer  If Anti-sticking layer gets damage, it will cause jammed stamp during stamp releasing step or imprint resist stick onto the stamp surface Workshop for NFF Nanoimprint System

15. Stamp handling  Cleaning the stamp by Acetone, IPA, thinner and DI water ONLY. (No oxygen plasma, EKC or MS2001)  Before put the stamp back into the packing box, please make sure the box is dust free  Mesa side always face downward inside the packing box and don’t make it face upward even in normal case  Seal the packing box by adhesive tape if it will not be used for a period of time  Don’t touch the Mesa surface with anything else.  Of course, don’t drop it Workshop for NFF Nanoimprint System

16. Thank you for your attention! Workshop for NFF Nanoimprint System