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RFMD ® Foundry Services. RFMD Foundry Services World’s Largest III-V Electronics Manufacturer  Two high volume Fabs for unlimited capacity  Starts >25%

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Presentation on theme: "RFMD ® Foundry Services. RFMD Foundry Services World’s Largest III-V Electronics Manufacturer  Two high volume Fabs for unlimited capacity  Starts >25%"— Presentation transcript:

1 RFMD ® Foundry Services

2 RFMD Foundry Services World’s Largest III-V Electronics Manufacturer  Two high volume Fabs for unlimited capacity  Starts >25% of the world’s GaAs wafers  Industry-leading cycle time

3 Foundry Services from the Leader 20 Years of Leadership in III-V Manufacturing  World-Class Technologies  GaAs  GaN  MBE  UHV Parts Cleaning  Experienced Support Teams  Process and Device Engineering  Quality  Supply Chain  CAD

4 RFMD qualifies GaN1 high power process technology for 65V operation Two additional GaAs pHEMT process technologies are now available Low noise GaAs pHEMT Switch GaAs pHEMT Foundry Services Latest News

5 Equipped to Support Customer Needs  GaAs HBT  GaAs pHEMT RFMD Greensboro, USA RFMD Newton-Aycliffe, UK  GaAs HBT  GaAs pHEMT  GaN  MBE  UHV Parts Cleaning

6 Industry-Leading Cycle Time from RFMD RFMD Prototype RFMD Production Foundry B Foundry C Foundry D Cycle Times – Industry Averages Cycle Times (wks ) 0 2 4 6 8 10 12 14 Foundry Services *Time from receipt of DRC clean layout file to delivery of standard processed wafers/die RFMD’s best-in-class cycle time is backed by our on-time pledge Prototype and shuttle lot cycle time = 6 weeks* Production lot cycle time = 6 weeks*

7 The Best Technology Available  Same process technologies used for RFMD products  Robust technology roadmap for GaN and GaAs  New process technologies available immediately upon production release  Technologies to support long product lifetimes

8 Available Foundry Technology GaN  GaN1 = High Power  GaN2 = High Linearity GaAs  FD30 = Power GaAs pHEMT  FD25 = Low noise GaAs pHEMT  FET-1H = Switch GaAs pHEMT  IPC3 = High Power Integrated Passive Components MBE  GaAs  InGaAs  AlGaAs  InGaP  AlInP UHV Parts Cleaning  Standard and custom services

9 RFMD GaN Process Technologies High Power GaN1 Key Attributes 36V – 65V operation High power density High peak efficiency High breakdown voltage (400V ) Technology developed and manufactured in the US High Linearity GaN2 Key Attributes 15V – 48V operation High linearity (6dB improvement) Low Cgs variation Low threshold voltage Technology developed and manufactured in the US High Power with Optimized Linearity GaN3 Key Attributes 36V – 65V operation Improved linearity Reduced I DQ drift High peak efficiency Currently in development Target Applications Military (EW, radar, milcom) Civilian (ATC, radar, cellular infrastructure) Target Applications Broadband handheld radios (PMR) CATV ISM Target Markets Cellular infrastructure Public mobile radio Next generation military radio Reliability E A = 2.1eV MTTF = 1.1x10 7 Hrs @ T CHANNEL = 200 o C Reliability E A = 2.1eV MTTF = 1.8x10 7 Hrs @ T CHANNEL = 200 o C Reliability E A = 1.5eV MTTF > 10 7 Hrs @ T CHANNEL = 200 o C

10 RFMD GaN1 High Power RFMD GaN2 High Linearity Reliability Test Results Sample Size GaN1 High Power GaN2 High Linearity Total Devices Wafers Fab Lots Epi Vendors Number of Temperatures Results GaN1 High Power GaN2 High Linearity GaN High Temperature Reliability Test

11 Reliability Test Results Sample size GaN1 High Power Total Devices 188 Wafers14 Fab Lots5 Epi Vendors1 Number of Temperatures 5 Results GaN1 High Power MTTF 7E7 Hrs EaEa 2.4 eV T C HANNEL 200 ºC V DS V GaN New 65V Qualification 182022242628 10 0 2 4 6 8 1/kT MTTF 350325300275250225200175150 Tch (C) RFMD GaN1 High Power

12 RFMD GaAs Process Technologies Low Noise pHEMT FD25 Key Attributes 7V operation f T = 50GHz NF MIN < 0.8dB @ 10GHz Technology developed and manufactured in UK Power pHEMT FD30 Key Attributes 10 V operation f T = 30GHz High power, efficiency Technology developed and manufactured in UK Switch pHEMT FET1H Key Attributes 7V operation High linearity switch Low noise Technology developed in US; manufactured in US and UK Target Applications Military (phased arrays, T/R module) Wireless front ends MMICs Target Applications Military (phased arrays, EW) Infrastructure Target Markets Wireless front ends Transmit/receive Phased arrays Reliability E A = 1.4 eV MTTF=5.6 x 10 6 Hrs Reliability E A = 1.7 eV MTTF=4.4 x 10 6 Hrs @150° Reliability E A = 2.4eV MTTF=1.3 x 10 11 Hrs @ 150°

13 Reliability Test Results Results FD25 Low Noise pHEMT FD30 Power pHEMT Number of Temperatures 33 5.6E64.4E6 Hrs 1.41.7 eV T C HANNE L 150 ºC 810 V 130140 mA Arrhenius plots 10% y = 20208x - 32.467 0 2 4 6 8 10 12 14 16 18 20 311280250225200180160142125 1/T(K) Ln TTF RFMD FD25 Low Noise pHEMT RFMD FD30 Power pHEMT GaAs High Temperature Reliability Test

14 MBE Foundry Services RFMD foundry services offers multiple Molecular Beam Epitaxy (MBE) platforms, Epi characterization, and experienced staffing to help develop your epitaxial structures. Specialty and high-volume, arsenic and phosphorus-based processes Accessible staff to design an epilayer structure and MBE process Optimize the performance of your existing epistructure MBE Foundry Services

15 Gallium arsenide (GaAs) Aluminum gallium arsenide (AlGaAs) Indium gallium phosphide (InGaP) Aluminum indium phosphide (AlInP) MBE Foundry Services Indium gallium arsenide (InGaAs) Material Offerings on GaAs Substrates

16  Available MBE systems include  Veecco Gen2K (7 x 6")  Riber R7000 (7 x 6")  Riber R6000 (4 x 6”) – VG100 (1x6”) Growth Capabilities  Low-temperature growth capability In-situ monitoring for temperature, layer thickness, and growth rate control Extensive characterization including Lehighton, Surfscan, Xray, Multifield Hall, Photoluminescence, and AFM Flexible accommodation: 4" and 6" wafer sizes are standard MBE Foundry Services

17  RFMD foundry services offers an extensive range of capabilities allowing for custom-designed procedures to meet your cleaning needs. UHV Parts Cleaning Services Before After

18 UHV Parts Cleaning Services Before After

19 RFMD foundry services offers an extensive range of capabilities allowing for custom-designed procedures to meet your cleaning needs. Wet cleaning capabilities Types of parts cleaned: stainless steel, refractory metal and PBN ceramic parts Standard and custom-cleaning procedures available UHV Parts Cleaning Services

20 Tool kit for circuit design and layout  ADS and AWR process design kits  Comprehensive design rules and technology documentation  How-to user guides Tracking information  WIP tracking  PCM data Individual customer collaboration sites for convenient data exchange Secured Customer Website World-Class Customer Service Guaranteed cycle time On-Time Shipment Pledge Foundry services team  Technology  CAD  Business  Customer service support Dedicated RFMD Team is Working for You

21 VOLUME MANUFACTURER with FLEXIBLE SCALE Foundry Services from the Leader

22 To learn more about RFMD Foundry Services, visit us at www.RFMD.com/Foundry


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