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ANALOG AND DIGITAL.  Center frequency of operation  Bandwidth  Insertion loss (for 360° phase shift)  VSWR or return loss  Switching time (for digital.

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Presentation on theme: "ANALOG AND DIGITAL.  Center frequency of operation  Bandwidth  Insertion loss (for 360° phase shift)  VSWR or return loss  Switching time (for digital."— Presentation transcript:

1 ANALOG AND DIGITAL

2  Center frequency of operation  Bandwidth  Insertion loss (for 360° phase shift)  VSWR or return loss  Switching time (for digital operation) or time required for 360° phase change (for analog operation)  Switching power or energy (for digital operation) or dc holding power (for analog operation)  Phase error  Power-handling capability(peak and average)

3 They are broadly divided into:  Ferrite Phase Shifters  Semiconductor Phase Shifters

4 Ferrite Phase Shifters Non Reciprocal ReciprocalNon Reciprocal Reciprocal Twin-toroid Toroidal Helical Circular toroid in circular waveguide Toroidal latching in stripline Slow-wave structure in stripline Microstrip meander line Toroidal co- planar waveguide Dual mode Faraday rotation Stripline latching Microstrip meander line WaveguidePlanar/MIC

5 Semiconductor Phase Shifters Reciprocal Non reciprocal P-I-N diode GaAs FET (Passive) Switched line Hybrid coupled Loaded line High-pass low- pass Switched network GaAs FET (active switch) Switched path GaAs FET (passive) GaAs FET (active switch) Switched line/loaded line Hybrid coupled High-pass low -pass Switched path DGFET Planar/hybrid MICMonolithic

6 Twin-Toroid (S-V Bands) Dual-Mode (S-V Bands) PIN Diode (L-Ku Bands) GaAs FET (L-V Bands) GeometryWaveguide Hybrid MICMonolithic Reciprocal/ Non reciprocal Reciprocal Bandwidth5% - 30%5% - 10%10% - 20%Octave Insertion loss(dB) 0.5-1.0-1.6 (S-Ka-V) 0.5-0.9-1.5 (S-Ka-V) 0.5-2 (L-Ku) 5-12 Switching time(µs) 1-1-5 (V-Ka-S) 20-30-150 (V-Ka-S) <10.001 Switching power/energy 25-30-150µJ (V-Ka-S) 100-150-1000µJ (V-Ka-S) 0.1-5 WNegligible FERRITE PHASE SHIFTERSSEMICONDUCTOR PHASE SHIFTERS

7 Twin-Toroid (S-V Bands) Dual-Mode (S-V Bands) PIN Diode (L-Ku Bands) GaAs FET (L-V Bands) Peak Power1-100 kW (Ka-S) 1-40 kW (Ka-S) kW (pulse width dependent) W Average Power1 kW (S- band) 500 W (S- Band) WmW Temperature Sensitivity 0.5º-3º /ºC Typical 0.5º-3º /ºC Typical Negligible-- Insertion phase trimming for 10% tolerance Usually required Not necessary Not necessary Radiation hardness Excellent Poor-- Weight1-4 oz (Ka-L) 1-4 oz (Ka-L) 0.5-1 oz (Ku-L) <0.1 oz FERRITE PHASE SHIFTERS SEMICONDUCTOR PHASE SHIFTERS

8 Analog Phase Shifters Semiconductor Reciprocal Non reciprocal Ferrite Reciprocal Reggia Spencer Rotary Field Varactor Diode GaAs FET (variable gain amplifier) Varactor Diode Hybrid coupled DGFET circuit using vector summation Hybrid coupled


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