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University of Toronto (TH2B - 01) 65-GHz Doppler Sensor with On-Chip Antenna in 0.18µm SiGe BiCMOS Terry Yao, Lamia Tchoketch-Kebir, Olga Yuryevich, Michael Gordon and Sorin P. Voinigescu
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS2 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS3 Motivation mm-wave integration in silicon accelerated by: Significantly smaller form factors of on-chip passives (inductors, transformers, antennae) Advances in SiGe BiCMOS Target applications: mm-wave sensors for medical and security applications Short range automotive radar
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS4 State-of-the-Art in mm-Wave Integration SiGe favoured over CMOS due to higher breakdown voltage higher PA power, lower phase noise VCOs Critical challenge tuning BW, phase noise and output power of VCO No Tx/Rx IC with antenna and fundamental VCO System Antenna on chip? Integrated Fund. VCO? Freq. (GHz) Process (f T /f MAX )Reference Tx YN77SiGe (200/250GHz)A. Natarajan (ISSCC, 2006) YN60SiGe (120/130GHz)C.H. Wang (ISSCC, 2006) NN60SiGe (200/250GHz)B. Floyd (ISSCC, 2006) Rx YN77SiGe (200/250GHz)A. Babakhani (ISSCC, 2006) NY65SiGe (150/160GHz)M. Gordon (SiRF, 2006) NN60SiGe (200/250GHz)B. Floyd (ISSCC, 2006) NN600.13µm CMOSB. Razavi (ISSCC, 2005)
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS5 Integrated Fundamental Frequency VCO Challenges: Accurate f osc modeling of passives and parasitics Low phase noise high-Q tank, large BV CEO, large V osc High P OUT large BV CEO, I BIAS, accurate matching Wide tuning range high capacitance-ratio varactors Benefits: Less EMI, no filtering required Area and power savings (multiplier structure, off-chip transition eliminated, etc.) Higher integration level = lower overall cost Note: Static frequency dividers equally important as VCO; so far only SiGe ones demonstrated >60GHz with low power (T. Dickson, SiRF ’06; E. Laskin, BCTM ’06)
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS6 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS7 System Highlights and Overview Extensive use of small footprint inductors as matching elements area savings HBT cascodes for higher gain, isolation
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS8 System Design – Receive Path 2-stage single-ended cascode LNA with vertically stacked transformer output Down-convert mixer noise- and power-matched to 200Ω differential Z out of LNA Bipolar IF amplifier for reduced 1/f noise
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS9 System Design – Transmit Path Differential Colpitts 61- 67GHz VCO (shared with receive path) 2-Stage emitter follower buffers 65GHz output buffer driving 50Ω loads per side
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS10 Building Blocks: Mixer Key design goals: 59-65GHz operation Low noise at low IF High conversion gain HBT for reduced 1/f noise Simultaneously noise- and power-matched to 200Ω differential LNA output Simulated: G ~ 9.2dB; IIP3 ~ 4.2dBm; NF ~ 13dB 13.2mW from 3.3V supply
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS11 mm-Wave Passives Reduced form factor of on-chip passives at mm-waves Inductors preferred for area efficiency and low-loss ASITIC with >90% accuracy; 2- π model Stacked transformer and power transfer measured up to 94GHz 65-GHz polyphase filter and measured phase response 1-65GHz 34 µm
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS12 Patch Antenna Design Patch Antenna Gain: -8.5dBi Patch has similar gain as dipole but better isolation on Si
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS13 Outline Motivation System Overview and Design Experimental Results Conclusions Acknowledgments
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS14 Fabrication Technology Jazz Semiconductor’s SBC18 SiGe BiCMOS process f T, f MAX >150 GHz 6-metal backend
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS15 Fabricated Structures 1.7mm LNA VCO Output Buffer IF Amp Mixer 1mm 1.7mm x 1.3mm Patch Antenna 1.3mm 1mm LNA VCO Mixer IF Amp Output Buffer 2.5mm x 2.5mm1mm x 1mm
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS16 2-Stage Cascode LNA Measurements Breakout measurements: 14dB S 21 @ 65GHz Input P 1dB = -12.8dBm Simulated NF = 10.5dB 40mW from 3.3V supply Total Area: 370 x 480µm 2
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS17 on-wafer probing of sensor without on-chip antenna measurement using horn antenna/suspended probe and adjustable metal reflector Experimental Results
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS18 Experimental Results SE meas. with external RF input of -48dBm @ 64GHz SE down-conversion gain of 16.5dB SE transmit output spectrum Diff. output power +4.3dBm after de- embedding set-up loss
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS19 6 elevations of horn antenna over Rx patch antenna (~ 15mm - 100mm) Propagation loss contributes to loss in conversion gain Experimental Results 16.5dB w/o antenna -24.5dB suspended probe over antenna -26dB horn antenna over patch antenna
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS20 Experimental Results Gain in good agreement with spectral measurement Measured IIP3 = -20dBm
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS21 Performance Summary Rx conversion gain (on-wafer probed) 16.5dB (S) Rx conversion gain (horn antenna)-26dB (S) Rx conversion gain (suspended probe) -24.5dB (S) Rx IIP3-20dBm Rx P 1dB, in -30dBm Rx noise figure (min.)12.5dB Tx output power (@ 65GHz)1.3dBm (4.3dBm D) LO tuning range61-67GHz Power consumption640mW Area1 x 1mm 2 (no patch antenna) 2.5 x 2.5mm 2 (with patch antenna) S: Single-endedD: Differential
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS22 Conclusions Single-chip 65-GHz Doppler sensor featuring: 61-67GHz integrated varactor-tuned fundamental frequency VCO on-chip patch antenna extensive use of lumped passives to minimize chip area Chip demonstrates: high level of mm-wave integration achievable in today’s production silicon technology feasibility of low-cost mm-wave systems for sensor and radio applications
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS23 Acknowledgments NSERC and Micronet for financial support Jazz Semiconductor for fabrication CMC for CAD tools K. Tang, K. Yau and S. Shahramian at U of T for simulation and measurement support
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS24 Thank You. Questions…
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS25 Backup Slides
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS26 System Design Considerations System acts as speed and motion sensor according to the Doppler effect: Range of detectable speeds dependent on Doppler freq. shift Upper bound set by IF amplifier BW Lower bound set by VCO phase noise
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS27 Building Blocks: On-Chip VCO Integrated 61-67GHz VCO Frequency scaled from earlier 60-GHz design by C. Lee (CSICS, ’04) with phase noise of -104dBc/Hz @ 1MHz carrier offset Differential Colpitts configuration with accumulation mode nMOS varactor (C2) and inductive emitter degeneration (L E ) for wide tuning range, low phase noise
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS28 System Design Considerations Why Patch Antenna? Low profile planar configuration ease of integration Can be accurately designed and analyzed using transmission-line model Metal ground plane and substrate contacts help maximize isolation, reduce coupling into substrate
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS29 Simulated Antenna Gain Results
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65-GHz Doppler Sensor with On-Chip Antenna in 0.18um SiGe BiCMOS30 Lowest Horn Antenna Elevation Highest Horn Antenna Elevation Radar Measurement Setup
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