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Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001.

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Presentation on theme: "Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001."— Presentation transcript:

1 Basic Bipolar Process Description Bipolar Process Flow –Vertical npn –Lateral pnp –JFET –Prepared by Randy Geiger, September 2001

2 Bipolar Process Flow P-substrate n+ buried collector implant n-epitaxy Buried collector Isolation Diffusionp-base diffusion n+ emitter diffusion Oxidation Contact Openings Metalization Bipolar Process Flow

3 n+ buried collector implant Buried collector Base Emitter Collector Vertical npn BJT

4 B E C Lateral pnp Modification E C B Lateral pnp BJT

5 B E C JFET Modification S D G

6 BJT Layout and Area Issues BJT Layout BJT Area Requirements Comparison of Area between MOS and Bipolar Processes

7 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55

8 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3

9 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2

10 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 15

11 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 19 2

12 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 19 14 43

13 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 19 14 43 14

14 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 19 14 47 14

15 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 19 14 47 14 4

16 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 14 47 14 4 6 12 2 2 NOT TO SCALE Note: 24 required Between p-base and isolation diffusion

17 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 14 63 6 12 2 2 Note: 24 required Between p-base and isolation diffusion Note: Not to vertical Scale 58

18 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 3 2 14 63 6 12 2 2 Note: 24 required Between p-base and isolation diffusion Note: Not to vertical Scale 58

19 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 63 Note: Not to vertical Scale 58 67 62

20 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 Note: Not to vertical Scale 67 62 Bounding Area = 4154 2

21 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 16 13 Bounding Area = 208  Comparison with Area for n-channel MOSFET in Bulk CMOS

22 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 14 12 Bounding Area = 168  Active Area = 6 2 Minimum-Sized MOSFET

23 15 1015202530354045506055706575 1 5 10 20 15 30 25 40 35 50 45 55 Note: Not to vertical Scale 67 62 MOSFET BJT

24 Area Comparison between BJT and MOSFET BJT Area = 4154 2 n-channel MOSFET Area = 168 2 Area Ratio25:1

25 That’s all folks!

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