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Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the.

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Presentation on theme: "Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the."— Presentation transcript:

1 Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the American Chemical Society – Petroleum Research Fund

2 Motivation: Thermophotovoltaics Photovoltaic Cell Heat Source Blackbody Radiator Thermal Radiation Blackbody Radiation

3 Experimental Setup Computer with LabVIEW Temp Controller Pulse Generator Cryostat with sample Digital Scope (Tektronix) (1) (2) (3) (4) (5) Oxford 77K Agilent Capacitance meter (Boonton)

4 P-N Junction Depletion Layer with Bias Depletion Layer With Bias Depletion Layer - - - + + + P N + + + + + + + + + + + + + + + + + + + + + + + + - - - - -

5 Typical Capture Data – Dependence on Pulse Length

6 Capture Analysis Holes:  = 2.5 x 10 -20 cm 2 Electrons:  = 7.5 x 10 -21 cm 2 Capture cross-section

7 Number of Traps ~ 7 x 10 15 cm -3

8 Typical Escape data – Dependence on Temperature 

9 Escape Analysis ~ trap depth

10 Conclusions A deep level has been detected The effective trap cross-section is ~10 -20 cm 2 The trap concentration is ~ 10 16 cm -3 The depth of the level is ~ 0.30 eV Our results are consistent with sub-bandgap PL from similar structures. Web links: This talk: http://webphysics.davidson.edu/faculty/thg/talks- posters/MAR-04.ppthttp://webphysics.davidson.edu/faculty/thg/talks- posters/MAR-04.ppt PL poster: http://webphysics.davidson.edu/faculty/thg/talks- posters/SESAPS-03.ppthttp://webphysics.davidson.edu/faculty/thg/talks- posters/SESAPS-03.ppt

11 Device Structure p+ layer n layer junction

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