1. Dry Etch and Thin films & Process Integration June 30th, 2015

2. Dry Etch and Thin films June 30th, 2015

3.  RIE -Cl Tool is UP and running. No major issues for June. Awaiting AMC, tentative plan in Nov’15.  RIE-F Tool is UP and running. No major issues for June, AMC tentative Nov’15. LL robot handler scratches the 4” clamp plate intermittently.  Currently, a temporary solution where the height of the clamp plate has been lowered.  Awaiting AMC, where fine tuning needs to be done. Etch rate drift for nitride, suspect due to metal exposure on tool, embedded contamination.  Perform aggressive clean of ceramic parts with fine scotch brite and re-verify( awaiting vendor supply)  Liners to be used during the metal exposure process ( order process is ongoing).  DRIE Tool is UP and running. No major issues for June. Awaiting AMC, tentative plan by end July’15

4.  PECVD Tool is UP and running. No major issues, AMC tentative July 1 st week. Wet etch rate for oxide and nitride degraded,  suspect film quality, observe that showerhead holes are enlarged, heater table is not level, to be re-qualified after AMC ( expected, July 1 st week once parts are released from the Bangalore Customs).  a-Si optimization ongoing with some support from Oxford process engineers.  RF Sputter Techport Sputter 1(metal and dielectrics) is UP and running. Sputter 2( dielectrics) set up has been modified for the co-sputtering process.  Trial runs show good uniformity for all 3 magnetrons at a height of 12.5cm, however limited by low deposition rate. Follow up with 2 magnetron configuration, more flexible bellows, slight modification for hardware.  Currently, magnetron 3 is moved back to vertical position, original planetary system to continue with user requests.  Turbo pumps are running overnight to achieve better base pressure. Techport service engineers in NNfC in 3 rd week of June, quite supportive, resolved couple of issues on e beam and sputter. AMC proposal awaited( by end July’15)  E-Beam Tool is UP and running. No major issues for June.

5. Dry Etch and Thin films June 30th, 2015

8. Dry Etch and Thin films June 30th, 2015

9. Sputter-1 ( Primary for Metal, Back up for Dielectrics) Sputter-2 (Primary for Dielectrics) Magnetrons for each material to be fixed for fair comparisons. For Sputter 2 being used for Dielectrics, no process monitoring is planned. Trend charts to be generated and updated on Twiki from 1 st week of July, 2015. ToolMethod/Fil m Monitoring Items Frequency SubstrateMetrologyRemarks Sputter 1 and 2 Manual check Deposition pressure DailyNoneNATrend chart Manual check Chamber Leak rate Weekly, every Monday(after maintenance) NoneNATrend chart Manual check Chamber Pump down time Weekly, every Monday(after maintenance) NoneNATrend chart Sputter 1 Ti, Cr, Al to verify all 3 magnetrons, 100nm thk? Sheet resistanceMonthly4” Si carrier wafer4 point probe Sample to be fixed at centre, represent 3” uniformity, trend chart ThicknessMonthly 4” Si carrier wafer Dektak Profilometer(kapt on tape on corners for step)

10. E-Beam Evaporation Trend charts to be generated and updated on Twiki from 1 st week of July 2015. ToolMethod/FilmMonitoring Items FrequencySubstrateMetrologyRemarks Techport E- Beam evaporation Manual check Deposition pressure DailyNoneNATrend chart Manual check Chamber base pressure DailyNoneNATrend chart Manual check Chamber Pump down time DailyNoneNATrend chart 300nm Al 150nmAl2O3 Sheet resistanceBi-weekly4” Si wafer4 point probe Wk1-Al Wk-3 –Al2O3 (Trend chart) ThicknessBi-weekly 4” Si wafer AFM for Al. Ellipsometer for Al2O3. AlCompositionMonthly 4”Si wafer(1cmx1cm, sample) XPS

11. PECVD Note: For SiC, Ge, doped a-Si,, monitoring will be done on a monthly basis. Trend charts to be generated and updated on Twiki from 1 st week of July,2015. Method/FilmMonitoring Items FrequencySubstrateMetrologyRemarks Manual check Chamber Leak rate DailyNoneNATrend chart SiO2 -500nm Si3N4-500nm a-Si-500nm on thin oxide Thickness& Uniformity, Refractive Index Bi-weekly4” Si waferEllipsometerTrend chart StressBi-weekly 4” Si waferK-MOS curvature measurement Trend chart, Pre-dep and post dep meas for above films Wet Etch RateBi-weekly4”Si waferEllipsometer Trend chart, BOE for oxide, KOH for Si3N4 TMAH for Si

12. RIE-Cl and RIE-F Trend charts to be generated and updated on Twiki from 1 st week of July,2015. ToolMethod/FilmMonitoring Items FrequencySubstrateMetrologyRemarks RIE-Cl and RIE-F Manual checkChamber Leak rateDailyNA Trend chart Visual check Wafer transfer, Plasma& DC bias stability, Helium flow RF & ICP Power (Forward & Reflected) Process Temperature + Chiller status Chamber Pressure &APC valve status Every etch recipe (tool owner and users) NA Log Book RIE-Cl (Metal, dielectrics, Si) Patterned films::SiO2(PECVD) Si3N4(PECVD and LPCVD) Metals –Al, Au Etch rate Etch profileBi-weekly 4” Si wafer Ellipsometer,(selec tivity),Dektak Profilometer, SEM Pattern is lines/gratings 10um to 100um wide. Trend charts and SEM images. RIE-F( dielectrics) Patterned films::SiO2(PECVD) Si3N4(PECVD and LPCVD) Si- iso and anisotropic etch Etch rate Etch profile Bi-weekly4”Si wafer Ellipsometer, Dektak Profilometer, SEM

13. DRIE SPTS Trend charts to be generated and updated on Twiki from 1 st week of July,2015 Method/FilmMonitoring Items FrequencySubstrateMetrologyRemarks Manual checkChamber Leak rateDailyNA Trend chart Visual check Wafer transfer, Helium flow Every etch recipe (tool owner and users) NA Log Book Silicon Etch rate Etch profile Selectivity with PR and SiO2 Scallops Bi weekly Patterned samples, cut from 4” Si wafer SEM Monitor for 50um (trench width) feature size.

14. Process Integration June 30th, 2015

15.  Projects ongoing in NNfC(guided by Prof K.N.Bhat) ProjectUserPI Owner Current StatusChallengesIssuesRemarks MSRIT RF MEMS switch(2014-2015 LaxmiSivaPackaging NNfC fabricated devices at BEL NALow ON/OFF ratio, Au debris, stress in top layer User expects new top layer design and device fabrication MTRDC TWT SWS(2015-2016) AnuragSivaLayer 1 design done, awaiting mask preparation & fabrication Layer 2 lithography, wafer-wafer bonding NAeChannel depth, sputter and electroplating, wfr bonding RCI Accelerometer(201 5- MandalSiva1 st Iteration design done, awaiting mask preparation&fabrication 7um trench filling and wfr –wfr bonding(hermetic seal) NAUnit process optimization reqd Nanosniff Sensor (2015) SachinSabihaPrototyping successful, awaiting more sample processing No IITGB Micro Needles (2015) BhushanSabihaLitho process optimization needed Back to Front alignment error, More samples will be given after process optimization is done.

16.  Projects awaiting confirmation/order ProjectUserPI Owner Current StatusChallengesIssuesRemarks NPOL Bending Bar(2015- Kathiresa n Sivaawaiting project confirmationCritical unit process trial &process estimation done, PSGIAS Solar Cell Contact Grid (2015) Balachan der SivaProject discussion, trial run, unit process optimisation&process estimation done -_Awaiting project confirmation INST SiNWs and Resonator (2015) KaushikProcess estimate done, need concrete design NA Unit process optimization reqd, feasible NAL Insulator Deposition and Etching (2015) PrasantaAwaiting samplesNo Processes done earlier, feasible ISRO LEOS RIE SiO2(2015) GiriAwaiting samplesStandard process, Feasible IITG VLNFS (2015) NarayanaProcess estimate done, need concrete design Unit process optimization reqd, feasible