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ROBERT HENDRY, GILBERT HENDRY, KEREN BERGMAN LIGHTWAVE RESEARCH LAB COLUMBIA UNIVERSITY HPEC 2011 TDM Photonic Network using Deposited Materials
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Motivation for Silicon Photonics Performance scaling becoming extremely difficult Data movement cost increasingly expensive On/off-chip communication bandwidth limited Photonics offers: Higher bandwidth density High datarate and parallel wavelengths Low operating power Low latency HPEC 20112
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Target Architectures Optical link to memory Optical interconnection network on stacked memory HPEC 20113
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Ring Resonators HPEC 20114 waveguide light source modulator waveguide signal switch waveguide signal switch Off resonance On resonance waveguide signal filter optical message electric control electric control
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Photonic Communication Light source Optical signal ring-resonator modulators Electrical control detectors filters Photonic Network HPEC 20114
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Photonic Communication Light source Optical signal Electrical control detectors filters Photonic Network 10 Gb/s x 3 = 30 Gb/s aggregate bandwidth HPEC 20115
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Optical Power Budget Optical Power Detector Sensitivity Nonlinear Effects Total Injected Power Received Power Maximum Network-Level Insertion Loss Injected Power Per Wavelength P total = P channel × N The total injectable power P total must remain below a threshold to avoid non-linear effects. P total is then divided among the N wavelengths of a WDM packet, where each channels injects at P channel. HPEC 20116
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Silicon Photonics Technologies Crystalline Silicon Best electrical and optical properties Unable to deposit Material Propagation Loss Crystalline Silicon 1.7 dB/cm [Xia et al. 2007] HPEC 20119
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Silicon Photonics Technologies Crystalline Silicon Best electrical and optical properties Unable to deposit Polycrystalline Silicon Can deposit Very lossy Material Propagation Loss Crystalline Silicon 1.7 dB/cm [Xia et al. 2007] Polycrystalline Silicon 6.45 dB/cm [Fang et al. 2008] HPEC 20119
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Silicon Photonics Technologies Crystalline Silicon Best electrical and optical properties Unable to deposit Polycrystalline Silicon Can deposit Very lossy Silicon Nitride Very low loss Can deposit Not useful active devices Material Propagation Loss Crystalline Silicon 1.7 dB/cm [Xia et al. 2007] Polycrystalline Silicon 6.45 dB/cm [Fang et al. 2008] Silicon Nitride 0.1 dB/cm [Shaw et al. 2005] [Gondarenko et al. 2009] HPEC 20119
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Poly-Si / SiN Combination approach We can use silicon nitride and polycrystalline silicon in combination SiN for non-active wave guides Poly-Si for active devices (e.g. ring-resonator based switch) Designs for a layered modulator and switch HPEC 201110
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Poly-Si / SiN Combination approach Waveguide crossings eliminated Insertion loss, crosstalk both incurred heavily in waveguide crossings However,.1 dB insertion loss per vertical coupling [Sun et al. 2008] HPEC 201111
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Insertion Loss Analysis Worst-case insertion loss for a photonic mesh [Biberman et al. 2011] HPEC 201112
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Insertion Loss Analysis Worst-case insertion loss for a photonic mesh [Biberman et al. 2011] HPEC 201113
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201115
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201116
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201117
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201118
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201119
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Photonic TDM NoC Architecture Mesh topology No electronic links, other than TDM clock distribution TIME Time slot 1 Time slot 2 Time slot 3 Time slot 4 Time slot 5 HPEC 201120
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X-Y Buffering Mesh topology No electronic links, other than TDM clock distribution Optical Power Detector Sensitivity Nonlinear Effects Maximum Network-Level Insertion Loss P total = P channel × N HPEC 201121
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Photonic TDM vs. Photonic Circuit-Switched Insertion Loss HPEC 201122
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Single-Layer Switch vs. Multi-layer Switch Single-layer TDM SwitchMulti-layer TDM Switch Control East 1 2 5 6 3 7 4 8 North South West Gateway HPEC 201123
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Single-Layer Switch vs. Multi-layer Switch Single-layer TDM SwitchMulti-layer TDM Switch Control East 1 2 5 6 3 7 4 8 North South West Gateway HPEC 201123 18 crossings4 crossings
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TDM Network Insertion Loss Analysis 4x4 Network 8x8 Network 16x16 Network 64x64 Network HPEC 201125
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Maximum Bandwidth (# of Wavelengths) 4x4 Network 8x8 Network 16x16 Network 64x64 Network HPEC 201126
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Summary of Results HPEC 201127
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Conclusions Poly-Silicon and Silicon Nitride in conjunction are a good choice of materials for photonic interconnection networks Low-loss = more wavelengths = higher bandwidth We’ve shown that our best network, when at large scale, can be improved with a multi-layer implementation Future work: We expect the elimination of waveguide crossings to significantly reduce crosstalk across a wide variety of network architectures HPEC 201128
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