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Thyristors Chapter 15
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This latch is stable in either of two states.
Q1 Q2 Latch On state Off state
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The four-layer diode { Q1 { Q2 p Q1 n p n Q2
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Four-layer diode breakover
IH V VK VB
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The silicon controlled rectifier (SCR)
Anode Anode Anode p Q1 n p Gate Gate Gate n Q2 Cathode Cathode Cathode
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SCRs The most widely used thyristors
Use gate triggering for turn-on instead of breakover triggering Data sheets list the gate trigger voltage (VGT) and the gate trigger current (IGT) Turn-off requires reducing the current to less than the holding current (IH)
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An SCR does not turn off at the end of the trigger pulse.
+VAA Load A B C D +VAA A B C D
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SCR crowbar to protect a load from overvoltage
VZ Power supply Protected load VT VGT The overvoltage that triggers the crowbar: VT = VZ + VGT
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Adding gain to a crowbar circuit
Power supply Protected load R2 R4 R1 is the trigger adjust
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Adding an IC amplifier to a crowbar circuit
10 kW 10 kW A Power supply Protected load IC VA 10 kW VZ The circuit triggers when VA exceeds VZ.
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SCR phase control vline Load 120 V R1 qfire vload R2 C qconduction
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A snubber network can be used to limit
the rate of voltage rise across the SCR. Load R1 RC snubber R2 C
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I Bidirectional thyristors can conduct in either direction.
Four-layer diodes in reverse parallel Diac
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I The triac is a popular bidirectional thyristor. Gate SCRs in Triac
reverse parallel Triac
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Triac phase control vline Load 120 V R1 vload R2 C
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Triac crowbar Fuse R1 Triac Protected load 120 V R2 Diac R3
R2 is the trigger adjust
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The photo-SCR is triggered by light. RL RL Open gate Sensitivity adjust Maximum sensitivity
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The gate-controlled switch is turned
off with a reverse-biased trigger. RL A B C D A B C D RG
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The silicon-controlled switch is
a low-current device. Anode Anode gate Cathode gate Cathode Either gate can be used to trigger or open this device.
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Unijunction transistor (UJT)
B2 B2 RE E E p V n vin B1 B1 When vin reaches the standoff voltage, the resistance between the emitter and B1 drops dramatically.
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