1. Modeling, Characterization and Design of Wide Bandgap MOSFETs for High Temperature and Power Applications UMCP: Neil Goldsman Gary Pennington(Ph.D) Stephen Powell (Ph.D) Gabriel Lopez (Former Merit ->MS) Steve Risner (Merit) Siddharth Potbhare (MS), Xiouhu Zhang(MS) ARL: Skip Scozzie Aivars Lelis (& UMCP Ph.D) Bruce Geil (& UMCP MS) Dan Habersat (& Former Merit) ARO STAS: Barry Mclean & Jim McGarrity

2. Personnel Development: Contribution to ARL Gary Pennington: Will finish PhD 2003 Steve Powell: Will finish PhD 2003 Gabriel Lopez: Former MERIT (planned MS), employed by Goldsman to help continue work at UMD and ARL Aivars Lelis: ARL employee, PhD under Goldsman (transferring our software to ARL for use and more development) Bruce Geil: ARL employee, MS under Goldsman (transferring our software to ARL for use and more development) Steve Risner: Very promising new MERIT student

3. Outline Introduction: -Benefits of Wide Bandgap Semiconductors -Difficulties to Overcome Atomic Level Analysis of Carrier Transport in 4H & 6H SiC: -Monte Carlo transport modeling: bulk and surface 4H & 6H SiC MOSFETS: -Developing new simulation methods to extract physic & propose how to improve performance. -Effects of High Temperatures & High Voltage -4H & 6H MOSFET Comparison 4H Schottky Diodes: - Modeling & Experiment vs. Temperature

4. Introduction: Benefits of Wide Bandgap Semiconductors (SiC) Extremely High Temperature Operation Extremely High Voltage Extremely High Power Capable of Growing Oxide => MOSFETs Potential for High Power and High Temperature Control Logic Power IC’s High Temperature IC’s

5. Research Strategy Device Modeling Drift-Diffusion Material Modeling Monte Carlo Experiment SiC Device Research & Design

6. Atomic Level Investigation of Carrier Transport in SiC: Monte Carlo Simulation

7. Developed surface SiC Monte Carlo to understand mobility degradation at the SiC-SiO2 interface. Monte Carlo for SiC: Inversion Layer 1) Electronic subband energies, wavefunctions, the surface potential and the surface Fermi level. 2) Surface phonon, roughness, and charge scattering with detailed dependence on 1), screening effects, and the interface trap density of states. Atomic scale physics of the SiC interface in the Monte Carlo:

8. Monte Carlo for SiC: Inversion Layer MOSFET Inversion Layer is a Quantum Well. Use Schrodinger and Poisson equations to find energy states and wavefunctions in the well self-consistently. State & Band Diagram

9. Monte Carlo: Surface Mobility vs. Field Calculate Surface Mobility from basic physics. Mobility vs. Surface Perpendicular Field agree with experiment: decreasing mobility with increasing surface field. Determined charge densities

10. SiC Surface Monte Carlo: New Findings In 4H the lowest subband is shifted ~.1 eV above the bulk conduction band, leading to a large interface state density. The shift is not as dramatic in 6H. Electrons are farther from the interface in 4H compared to 6H leading to less scattering in 4H if the interface state density of 4H can be reduced. Lower interface state density in (1120) 4H-SiC gives 5X improvement in mobility over (0001) 4H-SiC. The (0001) orientation in 6H-SiC has the lowest interface state density but the (1120) and (0338) orientations allow the electrons to move further away from the SiC-SiO2 interface lowering the scattering rate (effects will be investigated).

11. Physics of 6H SiC MOSFETs: Device Modeling p + substrate p-type epilayer Gate metal sourcedrain

12. Surface Mobility Electron Surface Phonon Surface Roughness Interface Trap Fixed Charge

13. Drift-Diffusion Equations Poisson Electron Continuity Hole Continuity Temperature Eqns

14. SiC MOSFET Modeling: MOSFET Doping Profile Start with Doping Profile & Mobility as Input Solve semiconductor equations numerically Obtain internal and terminal device characteristics

15. Current-Voltage Characteristics & Trapped Charge Agreement with Experiment at Room Temperature I ds vs V ds Characteristics at 300 K W = 200  m, L= 4  m Results show charged interfaces increase with gate voltage and peak near source and drain junctions & is the dominant mechanism for mobility degradation. N it (x) vs V gs at 300 K: W = 200  m, L= 4  m

16. Modeling predicts reduction of surface roughness alone shows minimal effect I DS vs V GS (linear scale) I DS vs V GS (log scale) Curves show 10-fold reduction of surface roughness scattering alone: small effect at large gate voltage

17. Combined Effect of Interface and Surface Roughness Scattering I DS vs V DS I DS vs V GS Reducing surface roughness scattering only improves mobility after interface trap density is significantly reduced!

18. Temperature Dependence I DS vs V GS for T=27, 100, 200 C (Subthreshold Region) Experiment and Device Model Agree:Increasing Temperature Increases Terminal Current in Subthreshold as well.

19. Modeling Interface Traps vs. Temperature 700K 500K 300K Calculations show interface trapping decreases at higher temperature, increasing mobility, which explains the rise in current with temperature. Charged Trap Density vs. Channel Position at 3 different Temperatures

20. Predict Effect: Reduced Interface Traps v.Temperature Calculations predict reducing interface states by 100 times reverses trend in I-V characteristics. Current reduces at higher temperatures due to reduced effect of interface states. Drain current versus drain voltage at 5 temperatures 700K 300K 500K

21. Simulation of n-type 4H-SiC MOSFETs Comparison between 6H and 4H SiC

22. Interface States: 4H vs. 6H

23. V thresh for 4H Calculated for Different Temperatures

24. Comparing 4H and 6H IV Curves at Different Voltages and T = 300 o C

25. Comparing 4H and 6H IV Curves at Different Temperatures

26. 4H High Voltage Operation Vd = 100V Vg = 5V T = 300 o C SourceDrain Potential vs. Position in 4H MOSFET

27. 4H MOSFET IV Curves at High Voltages Vds = 10V-100V Vgs = 5V T = 300 o C X 10 - 3

28. Impact Ionization Coefficient vs. Field for Electrons

29. Impact Ionization Coefficient vs. Field for Holes

30. x 10 6 Electric Fields in 4H MOSFET: High Voltage Vgs = 5V Vds = 100V T = 300 o C E_field in x directionE_field in y direction SourceDrain Source Drain

31. Impact Ionization Rate in 4H MOSFET Vgs = 5V Vds = 100V T = 300 o C x 10 24 Source Drain Negligible until very large bias voltages

32. MOSFET SUMMARY Detailed theoretical and experimental characterization of 6H MOSFETs performed. Agreement with experiment obtained. Role of interface states quantified as limiting factor in mobility. Transconductance increase with increasing temperature explained and quantified in linear region. Simulations indicate saturation velocity in channel depends on interface states as well as surface phonons. Simulator adapted to model 4H MOSFETs 6H MOSFET characteristics appear to be better than 4H Difference appears to be due to interface state and quantum confinement effects. 4H high voltage behavior modeled Impact ionization negligible until applied drain voltages approach 100V.

33. Experiment and Simulation of n-type 4H-SiC Schottky diodes Moving from 6H to 4H SiC Improved Bulk Mobility Higher Breakdown Voltage

34. Schottky: Introduction Experiment: -IV measurements under different temperatures were performed in ITS8000 testing system. Simulation: -Using a simulator based on the drift-diffusion model Ohmic contact Metal/Ti Schottky contact Epitaxial Drift Layer (4μm) Fig.1. The schematic cross section of the Simulated SiC Schottky diode Substrate Layer (1μm)

35. Schottky: Results and Discussion I-V and Temperature I-V Characteristics from experiment and simulation show a very good agreement. Experimental (dot curve) and Simulation (solid curve) results of forward IV characteristics of Ti/4H-SiC Schottky diodes under different temperatures. 298K 453K 323K 373K

36. Mobility Temperature dependence Schottky: Results and Discussion A T -2.38 is obtained from the fitting curve 1. 2. Another relationship derived from Mobility Fig. 4. Mobility Temperature Dependence

37. Improvement Due to Computer Modeling

38. Position and Temperature Dependent Mobility

39. 4H SiC Mobility vs Doping and Temperature

40. Effect of Doping in Epi Drift Layer

42. Barrier Height & Temperature Results and Discussion A negative temperature dependence of barrier height on n-type Ti/4H- SiC Schottky diode was obtained Table 3. Barrier Height Temperature Dependence Temperature (K) Voltage (V) Barrier Height (eV) Voltage (V) Barrier Height (eV) 298.151.61.141.51.14 323.151.61.041.51.07 373.151.60.951.50.98 423.151.60.901.50.92

43. Schottky Summary and Conclusion Model agrees with current-voltage experiments vs. temperature. Mobility and Schottky barrier height models obtained The on-resistance shows a T 2.23 variation with temperature. The electron mobility temperature dependence T -2.38 was confirmed. A negative temperature dependence in barrier height. Better device performance was observed by shortening the epi drift region and increasing the epi doping.

44. Developed and employed full zone Monte Carlo to characterize transport in SiC at high temperatures and at surface. Developed Drift-Diffusion simulator; 6H-SiC MOSFET simulator Combined with experiment to extract interface states Extracted surface mobility Explained why current increases with temperature Extended method to modeling 4H MOSFETs Compared 4H and 6H performance. Developed Method for Predicting Chip Heating Expanded the Experimental Component with the Merit Program Extended work in 4H-SiC with Schottky diode Developed temperature dependent diode Schottky simulator that agrees with experiment. Transferred Software to ARL Achievement Summary

45. 1)G. Pennington, and N. Goldsman, " Empirical Pseudopotential Band Structure of 3C, 4H, and 6H SiC Using Transferable Semiempirical Si and C Model Potentials,” Phy. Rev. B, vol 64, pp. 45104-1-10, 2001. 2)G. Pennington, N. Goldsman, C. Scozzie, J. McGarrit, F.B. Mclean., “Investigation of Temperature Effects on Electron Transport in SiC using Unique Full Band Monte Carlo Simulation,” International Semiconductor Device Research Symposium Proceedings, pp. 531-534, 2001. 3)S. Powell, N. Goldsman, C. Scozzie, A. Lelis, J. McGarrity, “Self-Consistent Surface Mobility and Interface Charge Modeling in Conjunction with Experiment of 6H-SiC MOSFETs,” International Semiconductor Device Research Symposium Proceedings, pp. 572-574, 2001. 4)S. Powell, N. Goldsman, J. McGarrity, J. Bernstein, C. Scozzie, A. Lelis, “Characterization and Physics-Based Modeling of 6H-SiC MOSFETs”’ Journal of Applied Physics, V.92, N.7, pp 4053-4061, 2002 5)S Powell, N. Goldsman, J. McGarrity, A. Lelis, C. Scozzie, F.B McLean., “Interface Effects on Channel Mobility in SiC MOSFETs,” Semiconductor Interface Specialists Conference, 2002 6)G. Pennington, S. Powell, N. Goldsman, J.McGarrity, A. Lelis, C.Scozzie., “Degradation of Inversion Layer Mobility in 6H-SiC by Interface Charge,” Semiconductor Interface Specialists Conference, 2002. Very Recent Publications

46. 7) G. Pennington and N. Goldsman, ``Self-Consistent Calculations for n-Type Hexagonal SiC Inversion Layers,” Accepted for publication in Journal of Applied Physics, 2003 8) G. Pennington, N. Goldsman, J. McGarrity, A Lelis and C. Scozzie, ``Comparison of 1120 and 0001 Surface Orientation in 4H SiC Inversion Layers,” Semiconductor Interface Specialists Conference, 2003. 9) S. Potbhare, N. Goldsman, A. Lelis, “Characterization and Simulation of Novel 4H SiC MOSFETs”, UMD Research Review Day Poster, March 2004. 10) G. Pennington, N. Goldsman, J. McGarrity, A. Lelis, C. Scozzie, ``(001) Oriented 4H-SiC Quantized Inversion Layers," International Semiconductor Device Research Symposium, pp. 338-339, 2003. 11) X. Zhang, N. Goldsman, J.B. Bernstein, J.M. McGarrity, S. Powell, ``Numerical and Experimental Characterization of 4H-SiC Schottky Diodes,” International Semiconductor Device Research Symposium, pp. 120-121, 2003. Very Recent Publications Continued

47. Future Work Explain physics of velocity saturation in MOSFET channel. Calculate IC Heating Characterize 4H MOSFET experimentally and theoretically Use Monte Carlo to pin-point key physical differences between 4H and 6H SiC surface mobility. Extend Monte Carlo to Extract Underlying Mechanisms of Oxide Degradation on Atomic Scale Develop SiC MOSFET Circuit (SPICE) Model Extend work to high temperature integrated circuits. Personnel development (ARL scientists: Advanced research and advanced degrees.)