1. Radiation tests in Padova
Giovanni Busetto, Alessandro Paccagnella
INFN and Università di Padova

2. Presentation
Radiation facilities at the INFN National Laboratories of Legnaro (LNL-INFN):
dedicated ion beam line at the TANDEM accelerator
microbeam at the AN-2000 accelerator
X-ray facility

3. Dedicated ion beam line
TANDEM accelerator,
LNL- INFN

4. Scattering Chamber LNL-INFN

5. Beam Line Characteristics
Device under radiation inside the vacuum chamber (< mbar)
Electrical connections via feedthrough: D-type connector with 50 pins and 16 BNCs
Under development: wireless connection
Ion fluence measurements:
Si diodes (low ion currents)
Faraday cup (high ion currents)

6. Ions already used

7. Available Ions List of ions available at the TANDEM accelerator:
H, Li, B, C, N, O, F, Mg, Al, Si, P, S, Cl, Ca, Ti, Cr, V, Fe, Ni, Cu, Zn, Ge, Se, Br, Zr, Mo, Ag, I, Au
Only Se and Mo have not been tested yet

8. Radiation tests performed
GLAST: test of ASIC (July 2001) / measurement of SEU sensitivity of 5 shift register types
Si Microstrip detectors and associated read-out electronics
CMOS elementary components (MOS, MOSFETs)
Field Programmable Gate Arrays (FPGAs)
FLASH EPROM memories
III-V solar cells and components (MESFETs, HEMTs)
...

9. Test Circuit (FPGA)

10. Test circuit (PCB) 14 MHz EPC1K8 EPF10K100 26c31 80 m
Device under beam

11. Irradiation with 109 MeV O ions,
LET=2.85 MeV cm2/mg

12. Irradiation with 109 MeV O ions,
LET=2.85 MeV cm2/mg

13. Weibull fit:
F(L)=Fsat (1- exp{-[(L-L0)/W]s})
Fsat=3.1·10-2 cm2
L0=0.1 MeV · cm2/mg
W=32
s=5

14. Other facilities Microbeam at the AN-2000 accelerator:
H and He ions, 2 MeV maximum
rastered area 2x2 mm2 (max)
beam current <10 pA
spot size < 2 mm
first tests (May 2001) on FPGAs
X-ray facility
under installation

15. X-ray Semiconductor Irradiation Facility
System characteristics:
• The system is composed of a X-ray machine (Seifert RP149) and an 8 inch wafer probe.
• Dose rate variable between 10 rad/s and 800 rad/s
(for radiation tolerance studies) .
• Diameter of the X-ray beam up to 1 cm in standard use conditions.
• Maximum power supply voltage: 60 kV.
• Maximum tube current: 60 mA (at 50 kV maximum).

16. X-ray Semiconductor Irradiation Facility
• The system will be assembled at INFN National Laboratory of Legnaro (Padova) November 21th 2001.
• The facility will be ready for operation before the end of 2001.