1. IGBT Technical Training
for FSC Family
By Application Engineering Group
판매대리점:피앤에스반도체
REV.1
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2. Construction & Operation of IGBT
The operation of the IGBT simply can be treated as a partitioning of an
N-channel MOSFET and a PNP bipolar transistor.
The IGBT functions as a bipolar transistor that is supplied base current by a MOSFET.
GATE
EMITTER
COLLECTOR N P N- P+ N+
COLLECTOR
GATE
EMITTER
Structure Of IGBT
Equivalent Circuit
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3. What`s a IGBT ? COMPARISON TABLE ITEM T R I G B T MOSFET SYMBOL
IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar to the power MOSFET in operation and construction.
These devices offer superior performance to the bipolar-transistors. They are core cost- effective solution in high power, wide range of frequency applications
COMPARISON TABLE
ITEM
CONTROL PARAMETER
CONTROL POWER
CONTROL CIRCUIT
ON-RESISTANCE
SWITCHING SPEED
SWITCHING LOSS
T R
CURRENT
HIGH
COMPLEX
LOW
SLOW
I G B T
VOLTAGE
LOW
SIMPLE
MEDIUM
MOSFET
VOLTAGE
LOW
SIMPLE
HIGH
FAST
SYMBOL
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4. Absolute Maximum Rating of IBGT
Symbol
Descriptions
BVCES
BVGES
ICmax
ICpeak
PCmax
FBSOA
SCSOA
Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)
Maximum voltage applicable between G-E
Maximum DC current can flow into the collector. Indicated by radiation condition (ex: TC=25˚C)
Maximum Peak current can flow into the collector. Indicated by current pulse width(ex:10μs) and Duty-cycle(ex:below 1%), and Radiation condition.
Allowable collector loss and maximum current consumption.
In usual case, at the temperature of TC (ex : 25˚C), the thermal resistance
Rθjc = becomes and usually indicated by its upper limit.
Forward Bias Safe Operating Area
It is the maximum pulse responding operation range to the voltageVce between C-E and the graph of the collector current. The characteristics of the high voltage part is deteriorated due to the thermal loss and the over concentration of current.
It is because of the phenomena called the second breakdown mode.
Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to human fault then the flow of the abnormally high current would destroy the device, so the current sensing and the feedback to the control block become the necessity. Which requires the IGBT should withstand the short- circuit condition for about 3~5μs.
ex: If the load is short-circuited when the applied voltage between the C-E is about 300~500V, then the current upto 8-12 times higher than the rated current will flow which would destroy the device within 20~30μs. Thus the protective circuit is designed to be about 10μs with the consideration
of the feedback delay time.
Tj(max) - TC
PC (max)
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5. Electerical Characteristics
Thermal Resistance
Symbol
Descriptions
RθJ-C(I)
RθJ-C(F)
RθC-S
Thermal resistance between IGBT's junction to case
Thermal resistance between FRD's junction to case
Thermal resistance between the case of IGBT to the heat sink
Electerical Characteristics
Symbol
Descriptions
BVCES
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited)
The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated current
(ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined.
Gate Threshold Voltage
The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex: 1mA).
The minimum and the maximum value is given.
Collector Cutoff Current
The maximum collector current when the gate and the emitter is short-circuited and
the rated voltage is applied to the collector.
Gate - Emitter Leakage Current
The maximum gate current when the collector and the emitter is short-circuited and
the rated voltage is applied between the gate-emitter.
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6. 6/45 Symbol Descriptions VCE(sat) Qg Cies Coes Cres Td Tr Ton Tf Toff
Collector - Emitter Saturation Voltage
The saturation voltage between the collector and the emitter when the rated current is
applied to the collector and the rate voltage is applied between the gate and the emitter.
Total Gate Charge
The amount of the gate electric charge needed for the IGBT to be completely On.
The amount of the driving current needed can be decided.
Input Capacitance
Output Capacitance
Reverse Capacitance
Turn on Delay Time
The time for the output to reach the 10% of the maximum of the output current
waveform after the pulse is applied to the gate.
Turn on Rise Time
The time to reach from 10% to 90% of the output current waveform.
Turn on Time
The time for the output to reach the 90% of the maximum of the output current
Turn off Falling Time
Turn off Time
waveform after the pulse is removed from the gate.
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7. IGBT Operation Area HIGH VOLTAGE HIGH CURRENT HIGH FREQUENCY IGBT BJT
25 KW 10 1
0.1
GTO
HIGH FREQUENCY
POWER
IGBT
BJT
MOSFET
KHZ
FREQUENCY
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8. Industrial Applications of IGBT
Module & Discrete
☞Elevator
☞F.A.
- Inverter,
AC servo,
Robotics
☞Power Supply
- UPS, SMPS
☞Transportation
-Ignition control,
Battery charger
☞Welding
machine
8/45

9. Consumer Applications of IGBT
IH-Jar
(Rice Cooker)
IGBT
Module & Discrete
IH-Cooker
MWO
Camera
Strobo
Washing
machine
Inverter
Air-conditioner
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10. Examples of Application Circuit (I)
☞ home appliance (IH-JAR, IH-Cooker, MWO..)
☞ Package Type : TO-220, TO-3P, TO-264 (SGP.., SGH..., SGL...)
☞ Current rating : 30 ~ 80A
2*IGBT DISCRETE
1*IGBT DISCRETE
SINGLE ENDED TYPE
(VCE : 900 ~ 1700V)
HALF BRIDGE TYPE
(VCE : 600V)
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11. Examples of Application Circuit (II)
☞ Industrial Equipment (Welding, UPS, IH Heater)
☞ Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....)
☞ Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A
4*1-PAK IGBT MODULE
2*2-PAK IGBT MODULE
FULL BRIDGE TYPE
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12. Examples of Application Circuit (III)
☞ 3Phase Motor Drive.(Inverter,Frequency Converter)
☞ Package Type : 6-Pak,2-Pak,1-Pak Module(FM6G...,FM2G...,FM1G....)
☞ Current Rating : 600V : 50 ~ 600A, 1200V : 50A ~ 200A
6*Discrete CO-PAK
1*6-PAK IGBT MODULE
2*2-PAK IGBT MODULE
6*1-PAK IGBT MODULE M
3PHASE BRIDGE TYPE
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13. Examples of Application Circuit (Ⅳ)
DC Chopper
DC Servo (NC, ROBOT)
DC.M
DC.M
From
Rectifier
From
Rectifier
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14. Examples of Application Circuit (Ⅴ)
Low Output CVCF Inverter
CVCF Inverter (UPS)
Filter M
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15. Examples of Application Circuit (Ⅵ)
VVVF Inverter (PAM) M
VVVF Inverter (PWM) M
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16. Block Diagram of Inverter System
. Using the Conventional IGBT Modules
Constant Voltage &
Constant Frequency
Variable Voltage &
Variable Frequency
IGBT Modules
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17. Home Appliances Application
. Using the Conventional IPMs
Variable Voltage &
Variable Frequency
Constant Voltage &
Constant Frequency
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18. Welding Machine type-1 Full Bridge Topology
50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity
Voltage
Current
Welding
Output + 3φ
To Gate
PWM
Starter
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19. Welding Machine type-2 2 IGBT Forward Topology
20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage
Current
Welding
Output + 3φ
To Gate
PWM
Starter
* Normally IGBT using by parallel connection
Parallel numbers depend on output power
* Need Vce(sat) matching tightly (with in 0.1V)
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20. Welding Machine type-3 Half Bridge Topology
50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity
20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage
Current + 3φ
Welding
Output
To Gate
PWM
Starter
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21. Un-interruptible Power Supply
Application
Personal Use 10~50A / 600V,1200V(Depend on Battery Design)(Discrete)
For Group Source 50~600A / 600V,1200V(2Module,1Module)
Voutput
AC-DC
Converter Ac
Output
Battery
Pack
Control
Circuit
To IGBT
Output
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22. Power Factor Correction
Application
20~40A/600V(Discrete)
Home Appliance, Air-conditioner
For Telecommunication Power and industrial power
Vout
Regulated
DC Output T
To Load AC
Controller
V,I
P.F > 0.99
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23. Camera Strobe - SCRs previously used in cameras change to IGBTs .
- By using IGBTs in strobe of cameras, flash control for exact focusing
and red-eye protection can be possible.
- Strobe application needs low Vce(sat), high peak current capability of IGBT
because of the relatively long switching period of a couple of milli-seconds.
- Industry needs trench IGBT for low-voltage operating battery system from 3V source.
A method of using SCRs
A method of using IGBT
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24. Induction Heating JAR & Cooker
This single ended resonant inverter is developed for the rice cooker
because of simple construction, high efficiency and low cost.
■ IGBTSolutions
■ Features
- Low Saturation Voltage
- Simple Gate Drive
- Wide SOA
- IGBT With FRD
- SGH40N60UFD
- SGL80N60UFD
- SGL160N60UFD
- SGL60N90DG3
- SGL40N150D
- FGL40N150D
- FGL60N170D
Half & Full
Bridge Type
Single Ended Type AC
Current Feedback
Gate Drive
Circuit
IH -Controller
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25. Micro Wave Oven (ZVS type)
This single ended resonant inverter is developed for food cooker
because of simple construction, high efficiency and low cost.
■ IGBTSolutions
■ Features
- Low Saturation Voltage
- Simple Gate Drive
- Wide SOA
- IGBT With FRD
- SGH40N60UFD
- SGL80N60UFD
- SGL160N60UFD
- SGL60N90DG3
- SGL40N150D
- FGL40N150D
- FGL60N170D
Half & Full
Bridge Type
Single Ended Type
DISPLAY AC
u-Com
(4-Bit)
Input
Key
PAD
Control Circuit
&
Gate Driver
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26. IGBT Gate Drive Solutions-1
- Home Appliance(IH jar/cooker)
- Single ended topology
- General analog drive IC
- Device :AN6711(Panasonic)
TA8316S(Toshiba)
FAN8800(FSC)
- Small/Medium Power application
- Bridge topology(half/full)
- Photo coupler with analog drive IC
- Device :HP3120
TLP250
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27. IGBT Gate Drive Solutions-21 2 1 2 2 1 1 2 1 2 1 1 3
HVIC
HVIC 2 1 3
HIGH
SIDE 2 2 1 2 1 2 1 3 3
- Small power application
- Bridge topology(half/full)
- High voltage analog process
with bootstrap circuit
- Device : IR2112(IR)
?(Toshiba)
Harris
- Small Power application
- Bridge topology & High side switch
- High voltage analog process
with bootstrap circuit
- Device : IR2117(IR)
?(Toshiba)
Harris
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28. IGBT Gate Drive Solutions-3
- Medium power application
- Bridge topology(half/full)
- Photo coupler + analog driver
with de-saturation network
- Device : Photo coupler +
MC33153(Motorola)
FAN8800(FSC)
- Medium/High Power application
- Bridge topology (half/full)
- Hybrid : photo coupler + discrete driver
One chip : photo coupler with analog driver
- Device : One chip, HP316J(HP)
Hybrid, EXB841(Fuji)
M57962(Mitsubishi)
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29. Power Loss = Switching Loss + Conduction Loss
▶ Switching Loss = Turn On Loss + Turn Off Loss
Vce Ic
Vce(sat)
Leakage Current
Off Time
Turn On
Time
On Time
Turn Off
Time
Off Time
Conduction Loss
Turn On
Loss
Turn Off
Loss
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30. Switching Test of IGBT Inductive Load Half Bridge Test Circuit
Vge G +
Same
D.U.T.
Load
-15V Ic G + Rg
+ 15V
- 15V
Vce
D.U.T. - G
Half Bridge Test Circuit
Waveform
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31. Question : What is a difference between CO-PAK and DISCRETE in IGBT?
Answer :
- CO-PAK IGBT have a parallel DIODE. freewheeling current can flow through a parallel DIODE.
- CO-PAK is commonly used in Bridge Topology and DISCRETE is used in Single Ended Topology.
CO-PAK IGBT => IGBT + DIODE in one PACKAGE
DISCRETE IGBT => Only IGBT
Application Example
Discrete IGBT
CO-PAK M
Transformer
-Forward SMPS
-Fly-back SMPS
-DC Motor Control
- Induction Heating
- Lamp Ballast
- Induction Motor
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32. Question : What is the Short Circuit Withstand Time(Tsc) ?
Answer :
- IGBTs are need to be protected from over current caused by Motor destruction or fault by noise.
Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time under
Short circuit condition
- Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc. M
Control
&
Driver
Over Current Detect
Feedback
Delay time 3~7uS
SC > Detecting abnormal condition --> Feedback --> Gate Turn-off
(Over Vce(sat),DC line current) (Soft Turn-off)
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33. Question : What is a difference between RUF and UF/XF SERIES ?
Answer :
- IGBT application is mainly divided into two parts.
. One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR).
and the other is power conversion application(SMPS,UPS, CONVERTER).
- product line-up and characteristics are as follow.
Series
RUF/RUFD
UF/UFD
XF/XFD **
NO Suffix
Application
Motor
SMPS(<50khz),UPS
SMPS(>100khz)
IH Cooker, Strobo
Design key point
Rugged,SC Rated
High performance
High Speed
depend on System
Characteristics
Vce(sat)=2.2V,tf=120nS
Vce(sat)=2.0V,tf=80nS
Vce(sat)=2.5V,tf=30nS
depend on Device
Example
SGP5N60RUFD
SGP23N60UFD
?????
SGL40N150D
SGR15040L
** : under developing
- The ordering system of IGBT Module is not classified as applications but is follows
US series for convenience.
But basic characteristics of Module is identified with that of Discrete IGBT RUF Series.
(Rugged,SC Rated)
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34. Question : In place of MOSFET, IGBT can be used in power conversion
application?
Answer :
* IGBT can take the place of MOSFET in power conversion applications because of the same
gate drive method, voltage driving.
* Take care of the specific characteristic of your system before applying IGBT.
* Especially, in bridge topologies, do use the CO-PAK IGBT including diode.
1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems)
- RUF/RUFD : UP TO 30KHZ
- UF/UFD : UP TO 70KHZ (for hard switching)
- XF/XFD : UP TO 100KHZ
2) GATE DRIVE CIRCUIT
- Lower gate-resistance is possible in bridge topologies than that of MOSFET because
there is any limitation of gate-resistance which can destroying devices by dv/dt and
di/dt.
- Lower gate-resistance offers lower turn-on loss.
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35. SGP40N60UF(40A at Tc=25℃) SGP20N60RUF(20A at Tc=100℃)
Question : What’s the IGBT’s Current Rating?
Answer :
* Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 ℃.
* In motor applications, Fairchild IGBT offers the current value defined at the condition of
Tc = 100 ℃ and in the power conversion applications, offers the value at Tc = 25 ℃.
* The current rating of Tc = 25 ℃ is about double comparing with that of Tc = 100 ℃.
SGP40N60UF(40A at Tc=25℃)
SGP20N60RUF(20A at Tc=100℃)
Same current rating
35/45

36. S/W Loss=on loss+off loss =(Eon+Eoff) * f
Question : What’s Turn off Energy (Eoff) ?
Answer :
* Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates
and how to design the thermal management.
* Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and
switching frequency of systems
* Eoff can provide more valuable information to designer than the turn-off falling time, tf.
Vce Ic
Turn off Waveform
S/W Loss=on loss+off loss
=(Eon+Eoff) * f
Turn off Power
(P=V*I)
Turn off Energy
(E= P(t) )
36/45

37. Question : How come Voltage Ratings are 600V / 1200V ?
Answer :
* The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V.
* For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC power
source, and 2200/3300V rating for several kind of railway systems.
* Industry needs 400/900/1500V rating IGBTs more and more.
1. IGBT VOLTAGE RATING ( Bridge Topology )
2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching )
AC > DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V )
AC > DC (400*1.4=560V) --> “ ( 560*1.8 = 1008V )
AC > DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V )
AC > DC(110*1.4=155V) --> “ (155*3.14 =490V) --> (490*1.5=750V )
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38. FAIRCHILD IGBTs Solution
We only recommend to use Fairchild IGBT to people who have used IGBT
made in some where else.
That’s the only how they can well the superior quality of Fairchild IGBT.
Fairchild offers...
Performance Curve
High Performance
- Low Saturation Voltage
- High Speed Switching
- Low Turn-off Energy
High Ruggedness
- Latch-Free Characteristics
- Short-Circuit Immunity
High Current
- Easy to Parallel Operation
- Positive Temperature Coefficient
38/45

39. Ordering Information of IGBT
■ Discrete
S G P 10 N 60 R UF D
Voltage Rating(X 10)
Current Rating
Device Type
G:IGBT
S: SEMICONDUCTOR
F: FAIRCHILD
Package Type
P: TO R: D-PAK
S: TO-220F U: I-PAK
H: TO-3P W: D2-PAK
F: TO-3PF I : I2-PAK
L: TO-264
N : N-Channel
Built in FRD
R : Short Circuit Rated
UF : Ultra Fast S/W
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40. Ordering Information of IGBT
■ Module
FM E 6 G 30 US 60
Voltage Rating(X 10)
Die characteristics
US : Ultra Fast & SC Rated
Current Rating
G: IGBT
Circuit Type
1 : Single
2 : Half Bridge
6 : 3Phase Bridge
7 : Complex
Module Type
Blank : Standard Type
E : Econo Type
C : Complex Type
FAIRCHILD Module
40/45

41. IGBT Line-up ■ High Performance IGBT 41/45 High Performance IGBT
Ic Tc=100℃
Symbol
Vces [V]
1.2 3 7 13 20 40 80
600
SGR2N60UF
SGR6N60UF
SGP13N60UF
SGP23N60UF
SGP40N60UF
SGH80N60UF
SGP6N60UF
SGS13N60UF
SGS23N60UF
SGS40N60UF
600
SGR2N60UFD
SGP6N60UFD
SGP13N60UFD
SGP23N60UFD
SGH40N60UFD
SGH80N60UFD
SGL160N60UFD
SGS6N60UFD
SGS13N60UFD
SGS23N60UFD
SGF40N60UFD
SGW6N60UFD
SGW13N60UFD
SGW23N60UFD
41/45

42. 42/45 ■ Rugged IGBT Symbol Vces [V] Ic [A] @ Tc=100℃ 5 10 15 20 25 3050
600V
SGP5N60RUF
SGP10N60RUF
SGP15N60RUF
SGP20N60RUF
SGH30N60RUF
SGW5N60RUF
SGW10N60RUF
1200V
SGH5N120RUF
SGH10N120RUF
SGH15N120RUF
SGH20N120RUF
SGH25N120RUF
600V
SGP5N60RUFD
SGP10N60RUFD
SGH15N60RUFD
SGH20N60RUFD
SGH30N60RUFD
SGL50N60RUFD
SGS5N60RUFD
SGS10N60RUFD
SGW5N60RUFD
SGW10N60RUFD
1200V
SGH5N120RUFD
SGH10N120RUFD
SGH15N120RUFD
SGH20N120RUFD
SGL25N120RUFD
D-PAK
I-PAK
D2-PAK
I2-PAK
TO-220
TO-220F
TO-3P
TO-3PF
TO-264
42/45

43. ■ Compact / PIM Type IGBT Module
Ic Tc=100℃
Vces [V]
PKG Type 5 10 15 20 25 30 50
600V
FME6G10US60
FME6G15US60
FME6G20US60
FME6G30US60
Compact
FMC6G10US60
FMC6G15US60
FMC6G20US60
FMC6G30US60
FMC6G50US60
PIM
FMC7G10US60
FMC7G15US60
FMC7G20US60
FMC7G30US60
FMC7G50US60
1200V
FME6G5US120
FME6G10US120
FME6G15US120
FME6G20US120
FME6G25US120
Compact
FMC7G5US120
FMC7G10US120
FMC7G15US120
FMC7G20US120
FMC7G25US120
PIM
■ Molding Type IGBT Module
Ic Tc=100℃
Vces [V]
PKG Type 50 75
100
150
200
300
400
600V
FM2G50US60
FM2G75US60
FM2G100US60
FM2G150US60
FM2G200US60
FM2G300US60
FMBH1G50US60
FMBH1G75US60
FMBH1G100US60
FMBH1G150US60
FMBH1G200US60
FMBH1G300US60
FMBH1G400US60
FMBL1G50US60
FMBL1G75US60
FMBL1G100US60
FMBL1G200US60
FMBL1G200US60
FMBL1G300US60
FMBL1G400US60
1200V
FM2G50US120
FM2G75US120
FM2G100US120
FM2G150US120
FM2G200US120
43/45

44. ■ Camera Strobe Application
Ic[A] pk
Symbol
Vces [V]
PKG Type
130
150
400
SGR15N40L
SGR20N40L
(D-PAK)
(D-PAK)
D-PAK
SGU15N40L
SGU20N40L
(I-PAK)
(I-PAK)
I-PAK
FGS20N40L
(8-SOP) 8
-SOP ※ A
ll of the Logic level Gate Drive
■ Induction Heating Application
Ic[A]
Symbol
Vces [V]
PKG Type 15 40 60 80
900
SGF15N90D
SGL60N90DG3
(TO-3PF)
(TO-264)
TO-3PF
1500
SGL40N150D
(TO-264)
1700
FGL60N170D
FGL80N170D
(TO-264)
(TO-264)
1500V
SGL40N150
(TO-264)
TO-264
44/45

45. IGBT Module Packages & Equivalent Circuits
FMBL series
FME6G series
FMBH series
FMC6G series
FM2G series
FMC7G series
FME6G series
FME6G series
FMC6G series
FMC6G series
FMC7G series
FMC7G series
FM2G series
FMBL series
FMBH series
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